Spontane Strukturbildung in Mehrschichtsystemen unter Verwendung Molekularer Gläser

Den Schwerpunkt dieser Dissertation bildet zum einen die Entwicklung eines theoretischen Modells zur Beschreibung des Strukturbildungsprozesses in organisch/anorganischen Doppelschichtsystemen und zum anderen die Untersuchung der Übertragbarkeit dieser theoretisch gewonnenen Ergebnisse auf reale Systeme. Hierzu dienen systematische experimentelle Untersuchungen dieses Phänomens an einem Testsystem. Der Bereich der selbstorganisierenden Systeme ist von hohem wissenschaftlichen Interesse, erlaubt er doch die Realisierung von Strukturen, die nicht den Begrenzungen heutiger Techniken unterliegen, wie etwa der Beugung bei lithographischen Verfahren. Darüber hinaus liefert ein vertieftes Verständnis des Strukturbildungsprozesses auch eine Möglichkeit, im Falle entsprechender technischer Anwendungen Instabilitäten innerhalb der Schichtsysteme zu verhindern und somit einer Degradation der Bauteile entgegenzuwirken. Im theoretischen Teil der Arbeit konnte ein Modell im Rahmen der klassischen Elastizitätstheorie entwickelt werden, mit dessen Hilfe sich die Entstehung der Strukturen in Doppelschichtsystemen verstehen läßt. Der hier gefundene funktionale Zusammenhang zwischen der Periode der Strukturen und dem Verhältnis der Schichtdicken von organischer und anorganischer Schicht, wird durch die experimentellen Ergebnisse sehr gut bestätigt. Die Ergebnisse zeigen, daß es technologisch möglich ist, über die Vorgabe der Schichtdicke in einem Materialsystem die Periodizität der entstehenden Strukturen vorzugeben. Darüber hinaus liefert das vorgestellte Modell eine Stabilitätsbedingung für die Schichtsysteme, die es ermöglicht, zu jedem Zeitpunkt die dominierende Mode zu identifizieren. Ein Schwerpunkt der experimentellen Untersuchungen dieser Arbeit liegt auf der Strukturbildung innerhalb der Schichtsysteme. Das Testsystem wurde durch Aufbringen einer organischen Schicht - eines sog. Molekularen Glases - auf ein Glassubstrat realisiert, als Deckschicht diente eine Siliziumnitrid-Schicht. Es wurden Proben mit variierenden Schichtdicken kontrolliert erwärmt. Sobald die Temperatur des Schichtsystems in der Größenordnung der Glasübergangstemperatur des jeweiligen organischen Materials lag, fand spontan eine Strukturbildung auf Grund einer Spannungsrelaxation statt. Es ließen sich durch die Wahl einer entsprechenden Heizquelle unterschiedliche Strukturen realisieren. Bei Verwendung eines gepulsten Lasers, also einer kreisförmigen Wärmequelle, ordneten sich die Strukturen konzentrisch an, wohingegen sich ihre Ausrichtung bei Verwendung einer flächenhaften Heizplatte statistisch verteilte. Auffällig bei allen Strukturen war eine starke Modulation der Oberfläche. Ferner konnte in der Arbeit gezeigt werden, daß sich durch eine gezielte Veränderung der Spannungsverteilung innerhalb der Schichtsysteme die Ausrichtung der Strukturen (gezielt) manipulieren ließen. Unabhängig davon erlaubte die Variation der Schichtdicken die Realisierung von Strukturen mit einer Periodizität im Bereich von einigen µm bis hinunter zu etwa 200 nm. Die Kontrolle über die Ausrichtung und die Periodizität ist Grundvoraussetzung für eine zukünftige technologische Nutzung des Effektes zur kontrollierten Herstellung von Mikro- bzw. Nanostrukturen. Darüber hinaus konnte ein zunächst von der Strukturbildung unabhängiges Konzept eines aktiven Sensors für die optische Raster-Nahfeld-Mikroskopie vorgestellt werden, das das oben beschriebene System, bestehend aus einem fluoreszierenden Molekularen Glas und einer Siliziumnitrid-Deckschicht, verwendet. Erste theoretische und experimentelle Ergebnisse zeigen das technologische Potential dieses Sensortyps.

Reduced L_1 level width and Coster-Kronig yields by relaxation and continuum interactions in atomic zinc

Calculations of the level width \gamma( L_1) and the f_12 and f_13 Coster-Kronig yields for atomic zinc have been performed with Dirac-Fock wave functions. For \gamma(L_1), a large deviation between theory and evaluated data exists. We include the incomplete orthogonality of the electron orbitals as well as the interchannel interaction of the decaying states. Orbital relaxation reduces the total rates in all groups of the electron-emission spectrum by about 10-20 %. Different, however, is the effect of the continuum interaction. The L_1-L_23X Coster-Kronig part of the spectrum is definitely reduced in its intensity, whereas the MM and MN spectra are slightly enhanced. This results in a reduction of Coster-Kronig yields, where for medium and heavy elements considerable discrepancies have been found in comparison to relativistic theory. Briefly, we discuss the consequences of our calculations for heavier elements.

Interchannel interactions and relaxation in the 2p auger spectra of Mg-like ions

Relativistic Auger rates for the 2p spectra of Mg-like ions have been calculated in the atomic range 13 < Z < 36. We used the multiconfiguration Dirac-Fock method but beyond a simple frozen-orbital approach we include also relaxation for the bound electrons and the interchannel interaction between the continuum states. Both effects may alter the individual transition rates remarkably. This is analysed for a few selected states within the isoelectronic sequence. Weak transitions within the 2p spectra can be changed by an order of magnitude because of the continuum coupling. The influence of both effects for higher-Z ions is reduced but still remain visible.

Is export orientation a major motivator for the adoption of food safety systems in the Turkish dried fig firms?

Food safety management systems (FSMSs) and the scrutinisation of the food safety practices that are intended for adoption on the firm level both offer strategic value to the dried fig sector. This study aims to prove the hypothesis that export orientation is a major motivating force for the adoption of food safety systems in the Turkish dried fig firms. Data were obtained from 91 dried fig firms located in Aydin, Turkey. Interviews were carried out with firms’ managers/owners using a face-to-face questionnaire designed from May to August of 2010. While 36.3 percent of the interviewed firms had adopted one or more systems, the rest had no certification. A binomial logistic econometric model was employed. The parameters that influenced this decision included contractual agreements with other firms, implementation of good practices by the dried fig farmers, export orientation and cost-benefit ratio. Interestingly, the rest of the indicators employed had no statistically significant effect on adoption behaviour. This paper focusses on the export orientation parameter directly in order to test the validity of the main research hypothesis. The estimated marginal effect suggests that when dried fig firms are export-oriented, the probability that these firms will adopt food safety systems goes up by 39.5 percent. This rate was the first range observed among all the marginal probability values obtained and thus verified the hypothesis that export orientation is a major motivator for the adoption of food safety systems in the Turkish dried fig firms.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

From Market- to Development Orientation - The Trade Aspect of Food Security and Agriculture

Trade rules are suggested to be one of the reasons for the hunger in the world and environmental damage. As current trade rules encourage market orientation and therefore specialization and industrialization of agriculture, which has as side effects rural hunger and environmental damage, there is room for improvement in the international trade regime. One main finding of Nexus Foundations' work in Geneva is a possible new orientation for agricultural and food markets – an orientation on development, rather than purely on markets. This development orientation consists of several elements from development of soil fertility to local markets and consumer relatedness. Since the Bali Ministerial in 2013, the WTO has set up a four year work programme on the issue of food security related to food reserves. This opens the chance to discuss broader food security issues in the realm of trade negotiations.