Three-electron radiative transitions

A new type of many-electron radiative transitions involving three electrons is predicted. The results of their investigation by many-body perturbation theory are presented. New spectral lines observed in the wavelength range of 37.5 to 54.0 nm by means of photon-induced fluorescence spectroscopy (PIFS) following the excitation of the Kr I 3d{^-1}np resonances are reported and compared with the predictions.

Study of 3d - 4f and 3d - 5f quartet and doublet transitions of doubly excited three-electron ions

We present the first observation of optical transitions between doubly excited doublet states in the term systems N V, 0 VI and F VII. The spectra were produced by foil excitation of fast ion beams. The assignment of the spectral lines was made by comparison with the results of MCDP calculations along the isoelectronic sequence. The same method also led to the identification of two 3d - 4f quartet transitions in Mg X.

Nuclear charge radii from X-ray transitions in muonic atoms of carbon, nitrogen and oxygen

Energies of muonic X-rays of the K-series of carbon, nitrogen and oxygen have been measured with an accuracy of about 15 eV. Root mean square radii of the nuclear charge distributions were deduced. The results 2.49±0.05 fm for carbon, 2.55 ±0.03 fm for nitrogen and 2.71 ±0.02 fm for oxygen are in good agreement at comparable accuracy with recent electron scattering data.

Beam-foil-excited auger transitions in neon

Energy spectra of electrons ejected from collisions between a carbon foil and Ne projectiles with energies between 1.4 and 20 MeV have been measured. Continuous and discrete electron energy distributions are observed. Auger transitions of foil-excited Ne have been studied. Using relativistic Dirac-Fock multiconfiguration calculations, most of the measured Auger transitions have been identified.

Volume isotope shifts in low lying transitions of Au I

Electronic factors in the volume isotope shift have been calculated in an ab initio way with the relativistic Dirac-Fock method for a number of different optical single/and two-photon transitions in Au I. The agreement with a semi-empirical method is within 10% for the resonance transition. For this one and a few other transitions the effect of core excitation has been analyzed with the Multi-configuration Dirac-Fock method as well, and it was found to reduce the electronic factor in the order of 5 %.

Auger transitions in Li-like and Be-like ions

Measurements of the Auger decay of beam-foil excited Be II and Be I levels are reported along with a proposed assignment of the experimental spectra. The Li I, Be II and Be III (1s 2s^2) ^2 S \rightarrow (1s^2 2s)^2 S Auger transitions as presented in this letter represents the first observation of such states in positive ions with Z \le 5.

Observation of two-electron-one-photon transitions in silicon

We report on the observation of K\alpha\alpha X-rays of Si, produced in collisions of 15-28 MeV Si projectiles with various target atoms in the range Z =6 to 29. Energy shifts of X-rays were measured and are compared with theoretical predictions. Cross section ratios for emission of K\alpha\alpha and K\alpha radiation are given.

Transitions between quintet states of doubly excited four-electron ions

Following an earlier observation in F VI we identified the line pair 1s2s2p^2 {^5P}-1s2s2p3d {^5P^0} , {^5D^0} for the elements N, O, Mg, and tentatively for A1 and Si in beam-foil spectra. Assignment was established by comparison with Multi-Configuration Dirac-Fock calculations along the isoelectronic sequence. Using this method we also identified some quartet lines of lithium-like ions with Z > 10.

Atomistic-continuum modeling of ultrafast laser-induced melting of silicon targets

In this work, we present an atomistic-continuum model for simulations of ultrafast laser-induced melting processes in semiconductors on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with MD method on the atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast heat conduction, and photo-excited free carrier diffusion are accounted for with a continuum TTM-like model (called nTTM). First, we independently consider the applications of nTTM and MD for the description of silicon, and then construct the combined MD-nTTM model. Its development and thorough testing is followed by a comprehensive computational study of fast nonequilibrium processes induced in silicon by an ultrashort laser irradiation. The new model allowed to investigate the effect of laser-induced pressure and temperature of the lattice on the melting kinetics. Two competing melting mechanisms, heterogeneous and homogeneous, were identified in our big-scale simulations. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the large negative volume of melting of silicon, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. A series of simulations for a range of absorbed fluences allowed us to find the threshold fluence value at which homogeneous liquid nucleation starts contributing to the classical heterogeneous propagation of the solid-liquid interface. A series of simulations for a range of the material thicknesses showed that the sample width we chosen in our simulations (800 nm) corresponds to a thick sample. Additionally, in order to support the main conclusions, the results were verified for a different interatomic potential. Possible improvements of the model to account for nonthermal effects are discussed and certain restrictions on the suitable interatomic potentials are found. As a first step towards the inclusion of these effects into MD-nTTM, we performed nanometer-scale MD simulations with a new interatomic potential, designed to reproduce ab initio calculations at the laser-induced electronic temperature of 18946 K. The simulations demonstrated that, similarly to thermal melting, nonthermal phase transition occurs through nucleation. A series of simulations showed that higher (lower) initial pressure reinforces (hinders) the creation and the growth of nonthermal liquid nuclei. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a face-centered cubic crystal structure. The results of this study, therefore, have important implications for interpretation of experimental data on the kinetics of melting process of semiconductors.