Adsorption kinetic investigations of phthalocyanine derivatives self assembled monolayers (SAMs) on gold: Temperature influence on the SAM formation process and quality

The ordered nano-structured surfaces, like self-assembled monolayers (SAMs) are of a great scientific interest, due to the low cost, simplicity, and versatility of this method. SAMs found numerous of applications in molecular electronics, biochemistry and optical devices. Phthalocyanine (Pc) complexes are of particular interest for the SAM preparation. These molecules exhibit fascinating physical properties and are chemically and thermally stable. Moreover their complex structure is advantageous for the fabrication of switchable surfaces. In this work the adsorption process of Pcs derivatives, namely, subphthalocyanines (SubPcB) and terbium (2TbPc) sandwich complexes on gold has been investigated. The influence of the molecular concentration, chain length of peripheral groups, and temperature on the film formation process has been examined using a number of techniques. The SAMs formation process has been followed in situ and in real time by means of second harmonic generation (SHG) and surface plasmon resonance (SPR) spectroscopy. To investigate the quality of the SAMs prepared at different temperatures atomic force microscopy (AFM) and X-Ray photoelectron spectroscopy (XPS)measurements were performed. Valuable information about SubPcB and 2TbPc adsorbtion process has been obtained in the frame of this work. The kinetic data, obtained with SHG and SPR, shows the best conformance with the first order Langmuir kinetic model. Comparing SHG and SPR results, it has been found, that the film formation occurs faster than the formation of chemical bonds. Such, the maximum amount of molecules on the surface is reached after 6 min for SubPcB and 30 min for 2TbPc. However, at this time the amount of formed chemicals bonds is only 10% and 40% for SubPcB and 2TbPc, respectively. The most intriguing result, among others, was obtained at T = 2 °C, where the formation of the less dense SAMs have been detected with SHG.However, analyzing XPS and AFM data, it has been revealed, that there is the same amount of molecules on the surface at both temperature T = 2 °C, and T = 21 °C, but the amount of formed chemicals bond is different. At T = 2 °C molecules form aggregates, therefore many of available anchor groups stay unattached.

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

Organische Mikro- und Nanodrähte auf Basis von Perylendiimiden

Diese Arbeit thematisiert die optimierte Darstellung von organischen Mikro- und Nanodrähten, Untersuchungen bezüglich deren molekularen Aufbaus und die anwendungsorientierte Charakterisierung der Eigenschaften. Mikro- und Nanodrähte haben in den letzten Jahren im Zuge der Miniaturisierung von Technologien an weitreichendem Interesse gewonnen. Solche eindimensionalen Strukturen, deren Durchmesser im Bereich weniger zehn Nanometer bis zu einigen wenigen Mikrometern liegt, sind Gegenstand intensiver Forschung. Neben anorganischen Ausgangssubstanzen zur Erzeugung von Mikro- und Nanodrähten haben organische Funktionsmaterialien aufgrund ihrer einfachen und kostengünstigen Verarbeitbarkeit sowie ihrer interessanten elektrischen und optischen Eigenschaften an Bedeutung gewonnen. Eine wichtige Materialklasse ist in diesem Zusammenhang die Verbindungsklasse der n-halbleitenden Perylentetracarbonsäurediimide (kurz Perylendiimide). Dem erfolgreichen Einsatz von eindimensionalen Strukturen als miniaturisierte Bausteine geht die optimierte und kontrollierte Herstellung voraus. Im Rahmen der Doktorarbeit wurde die neue Methode der Drahterzeugung „Trocknen unter Lösungsmittelatmosphäre“ entwickelt, welche auf Selbstassemblierung der Substanzmoleküle aus Lösung basiert und unter dem Einfluss von Lösungsmitteldampf direkt auf einem vorgegebenen Substrat stattfindet. Im Gegensatz zu literaturbekannten Methoden ist kein Transfer der Drähte aus einem Reaktionsgefäß nötig und damit verbundene Beschädigungen der Strukturen werden vermieden. Während herkömmliche Methoden in einer unkontrolliert großen Menge von ineinander verwundenen Drähten resultieren, erlaubt die substratbasierte Technik die Bildung voneinander separierter Einzelfasern und somit beispielsweise den Einsatz in Einzelstrukturbauteilen. Die erhaltenen Fasern sind morphologisch sehr gleichmäßig und weisen bei Längen von bis zu 5 mm bemerkenswert hohe Aspektverhältnisse von über 10000 auf. Darüber hinaus kann durch das direkte Drahtwachstum auf dem Substrat über den Einsatz von vorstrukturierten Oberflächen und Wachstumsmasken gerichtetes, lokal beschränktes Drahtwachstum erzielt werden und damit aktive Kontrolle auf Richtung und Wachstumsbereich der makroskopisch nicht handhabbaren Objekte ausgeübt werden. Um das Drahtwachstum auch hinsichtlich der Materialauswahl, d. h. der eingesetzten Ausgangsmaterialien zur Drahterzeugung und somit der resultierenden Eigenschaften der gebildeten Strukturen aktiv kontrollieren zu können, wird der Einfluss unterschiedlicher Parameter auf die Morphologie der Selbstassemblierungsprodukte am Beispiel unterschiedlicher Derivate betrachtet. So stellt sich zum einen die Art der eingesetzten Lösungsmittel in flüssiger und gasförmiger Phase beim Trocknen unter Lösungsmittelatmosphäre als wichtiger Faktor heraus. Beide Lösungsmittel dienen als Interaktionspartner für die Moleküle des funktionellen Drahtmaterials im Selbstassemblierungsprozess. Spezifische Wechselwirkungen zwischen Perylendiimid-Molekülen untereinander und mit Lösungsmittel-Molekülen bestimmen dabei die äußere Form der erhaltenen Strukturen. Ein weiterer wichtiger Faktor ist die Molekülstruktur des verwendeten funktionellen Perylendiimids. Es wird der Einfluss einer Bay-Substitution bzw. einer unsymmetrischen Imid-Substitution auf die Morphologie der erhaltenen Strukturen herausgestellt. Für das detaillierte Verständnis des Zusammenhanges zwischen Molekülstruktur und nötigen Wachstumsbedingungen für die Bildung von eindimensionalen Strukturen zum einen, aber auch die resultierenden Eigenschaften der erhaltenen Aggregationsprodukte zum anderen, sind Informationen über den molekularen Aufbau von großer Bedeutung. Im Rahmen der Doktorarbeit konnte ein molekular hoch geordneter, kristalliner Aufbau der Drähte nachgewiesen werden. Durch Kombination unterschiedlicher Messmethoden ist es gelungen, die molekulare Anordnung in Strukturen aus einem Spirobifluoren-substituierten Derivat in Form einer verkippten Molekülstapelung entlang der Drahtlängsrichtung zu bestimmen. Um mögliche Anwendungsbereiche der erzeugten Drähte aufzuzeigen, wurden diese hinsichtlich ihrer elektrischen und optischen Eigenschaften analysiert. Neben dem potentiellen Einsatz im Bereich von Filteranwendungen und Sensoren, sind vor allem die halbleitenden und optisch wellenleitenden Eigenschaften hervorzuheben. Es konnten organische Transistoren auf der Basis von Einzeldrähten mit im Vergleich zu Dünnschichtbauteilen erhöhten Ladungsträgerbeweglichkeiten präpariert werden. Darüber hinaus wurden die erzeugten eindimensionalen Strukturen als aktive optische Wellenleiter charakterisiert. Die im Rahmen der Dissertation erarbeiteten Kenntnisse bezüglich der Bildung von eindimensionalen Strukturen durch Selbstassemblierung, des Drahtaufbaus und erster anwendungsorientierter Charakterisierung stellen eine Basis zur Weiterentwicklung solcher miniaturisierter Bausteine für unterschiedlichste Anwendungen dar. Die neu entwickelte Methode des Trocknens unter Lösungsmittelatmosphäre ist nicht auf den Einsatz von Perylendiimiden beschränkt, sondern kann auf andere Substanzklassen ausgeweitet werden. Dies eröffnet breite Möglichkeiten der Materialauswahl und somit der Einsatzmöglichkeiten der erhaltenen Strukturen.