Microbial use of organic substrates and maize growth, especially in saline and alkaline soils of Pakistani Punjab

This thesis consists of 4 main parts: (1) impact of growing maize on the decomposition of incorporated fresh alfalfa residues, (2) relationships between soil biological and other soil properties in saline and alkaline arable soils from the Pakistani Punjab, (3) decomposition of compost and plant residues in Pakistani soils along a gradient in salinity, and (4) interactions of compost and triple superphosphate on the growth of maize in a saline Pakistani soil. These 4 chapters are framed by a General Introduction and a Conclusions section. (1) In the first study, the effects of growing maize plants on the microbial decomposition of freshly chopped alfalfa residues was investigated in a 90-day pot experiment using a sandy arable soil. Assuming that the addition of alfalfa residues did not affect the decomposition of native soil organic matter, only 27% of the alfalfa residues were found as CO2. This suggests that a considerable part of alfalfa-C remained undecomposed in the soil. However, only 6% of the alfalfa residues could be recovered as plant remains in treatment with solely alfalfa residues. Based on d13C values, it was calculated that plant remains in treatment maize + alfalfa residues contained 14.7% alfalfa residues and 85.3% maize root remains. This means 60% more alfalfa-C was recovered in this treatment. (2) In the second study, the interactions between soil physical, soil chemical and soil biological properties were analysed in 30 Pakistani soils from alkaline and saline arable sites differing strongly in salinisation and in soil pH. The soil biological properties were differentiated into indices for microbial activity, microbial biomass, and community structure with the aim of assessing their potential as soil fertility indices. (3) In the third study, 3 organic amendments (compost, maize straw and pea straw) were added to 5 Pakistani soils from a gradient in salinity. Although salinity has depressive effects on microbial biomass C, biomass N, biomass P, and ergosterol, the clear gradient according to the soil salt concentration was not reflected by the soil microbial properties. The addition of the 3 organic amendments always increased the contents of the microbial indices analysed. The amendment-induced increase was especially strong for microbial biomass P and reflected the total P content of the added substrates. (4) The fourth study was greenhouse pot experiment with different combinations of compost and triple superphosphate amendments to investigate the interactions between plant growth, microbial biomass formation and compost decomposition in a strongly saline Pakistani arable soil in comparison to a non-saline German arable soil. The Pakistani soil had a 2 times lower content of ergosterol, a 4 times lower contents of microbial biomass C, biomass N and biomass P, but nearly a 20 times lower content of NaHCO3 extractable P. The addition of 1% compost always had positive effects on the microbial properties and also on the content of NaHCO3 extractable P. The addition of superphosphate induced a strong and similar absolute increase in microbial biomass P in both soils.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.