Zur Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohle

Die Verwendung von Aktivkohlen und -koksen stellt eine Alternative zu herkömmlichen Prozessen zur Verminderung der NOx-Emissionen in Rauchgasen dar. An diesen Materialien wird Stickstoffmonoxid adsorbiert und katalytisch zu N2 reduziert. Eine einheitliche Erklärung über die ablaufenden Vorgänge und die Reaktionsmechanismen gibt es noch nicht. Die Ergebnisse der bisher veröffentlichten wissenschaftlichen Arbeiten sind sehr unterschiedlich, wenn nicht sogar widersprüchlich. In dieser Arbeit wird, anhand der Messung von NO-Durchbruchskurven und thermischen Desorptionsspektren, die Adsorption und Reaktion von Stickstoffmonoxid an Aktivkohlen und -koksen in Anwesenheit von Sauerstoff und Wasserdampf untersucht. Zur Durchführung der experimentellen Untersuchungen wird eine Versuchsanlage, bestehend aus einer Vorrichtung zur Gasgemischaufbereitung, einem Festbettreaktor und einer Gasanalytik, konzipiert und aufgebaut. Die Untersuchungen erfolgen bei Temperaturen zwischen 100 und 150 °C. Die NO-, O2- und H2O-Konzentrationen werden anhand der Rauchgaszusammensetzung kohlegefeuerter Kraftwerke gewählt. Die experimentellen Untersuchungen konzentrieren sich auf die Verwendung einer Aktivkohle aus Ölpalmschalen, die in einem Drehrohrreaktor am Institut für Thermische Energietechnik der Universität Kassel hergestellt wurde. Die experimentellen Ergebnisse zeigen, dass während des Prozesses NO-Adsorption, -Reduktion und -Oxidation, NO2-Bildung, -Adsorption und -reduktive Desorption, H2O-Adsorption sowie O2-Vergasung gleichzeitig stattfinden. Bei niedrigen Temperaturen werden die NO2-Bildung und die Adsorption bevorzugt. Die NO-Reduktion läuft über adsorbiertes NO mit CO2- und CO-Bildung. Durch O2-Vergasung werden aktive freie Cf-Plätzen für die NO-Reaktion und -Adsorption gebildet. Wasserdampf wird an der Aktivkohle adsorbiert und belegt aktive Plätze für diese Prozesse. Aus den experimentellen Ergebnissen werden kinetische und Gleichgewichtsparameter der NO-Sorption bestimmt. Ein vereinfachtes mathematisches Modell des Festbettreaktors, das zur Berechnung der NO-Durchbruchskurven bei unterschiedlichen Temperaturen dient, wird aufgestellt.

Highly Sensitive Sensor Based On Intracavity Laser Absorption Spectroscopy By Means of Relative Intensity Noise

This thesis concerns with the main aspects of medical trace molecules detection by means of intracavity laser absorption spectroscopy (ICLAS), namely with the equirements for highly sensitive, highly selective, low price, and compact size sensor. A novel two modes semiconductor laser sensor is demonstrated. Its operation principle is based on the competition between these two modes. The sensor sensitivity is improved when the sample is placed inside the two modes laser cavity, and the competition between the two modes exists. The effects of the mode competition in ICLAS are discussed theoretically and experimentally. The sensor selectivity is enhanced using external cavity diode laser (ECDL) configuration, where the tuning range only depends on the external cavity configuration. In order to considerably reduce the sensor cost, relative intensity noise (RIN) is chosen for monitoring the intensity ratio of the two modes. RIN is found to be an excellent indicator for the two modes intensity ratio variations which strongly supports the sensor methodology. On the other hand, it has been found that, wavelength tuning has no effect on the RIN spectrum which is very beneficial for the proposed detection principle. In order to use the sensor for medical applications, the absorption line of an anesthetic sample, propofol, is measured. Propofol has been dissolved in various solvents. RIN has been chosen to monitor the sensor response. From the measured spectra, the sensor sensitivity enhancement factor is found to be of the order of 10^(3) times of the conventional laser spectroscopy.

Squeezed thermal phonons precurse nonthermal melting of silicon as a function of fluence

A femtosecond-laser pulse can induce ultrafast nonthermal melting of various materials along pathways that are inaccessible under thermodynamic conditions, but it is not known whether there is any structural modification at fluences just below the melting threshold. Here, we show for silicon that in this regime the room-temperature phonons become thermally squeezed, which is a process that has not been reported before in this material. We find that the origin of this effect is the sudden femtosecond-laser-induced softening of interatomic bonds, which can also be described in terms of a modification of the potential energy surface. We further find in ab initio molecular-dynamics simulations on laser-excited potential energy surfaces that the atoms move in the same directions during the first stages of nonthermal melting and thermal phonon squeezing. Our results demonstrate how femtosecond-laser-induced coherent fluctuations precurse complete atomic disordering as a function of fluence. The common underlying bond-softening mechanism indicates that this relation between thermal squeezing and nonthermal melting is not material specific.

Atomistic-continuum modeling of ultrafast laser-induced melting of silicon targets

In this work, we present an atomistic-continuum model for simulations of ultrafast laser-induced melting processes in semiconductors on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with MD method on the atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast heat conduction, and photo-excited free carrier diffusion are accounted for with a continuum TTM-like model (called nTTM). First, we independently consider the applications of nTTM and MD for the description of silicon, and then construct the combined MD-nTTM model. Its development and thorough testing is followed by a comprehensive computational study of fast nonequilibrium processes induced in silicon by an ultrashort laser irradiation. The new model allowed to investigate the effect of laser-induced pressure and temperature of the lattice on the melting kinetics. Two competing melting mechanisms, heterogeneous and homogeneous, were identified in our big-scale simulations. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the large negative volume of melting of silicon, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. A series of simulations for a range of absorbed fluences allowed us to find the threshold fluence value at which homogeneous liquid nucleation starts contributing to the classical heterogeneous propagation of the solid-liquid interface. A series of simulations for a range of the material thicknesses showed that the sample width we chosen in our simulations (800 nm) corresponds to a thick sample. Additionally, in order to support the main conclusions, the results were verified for a different interatomic potential. Possible improvements of the model to account for nonthermal effects are discussed and certain restrictions on the suitable interatomic potentials are found. As a first step towards the inclusion of these effects into MD-nTTM, we performed nanometer-scale MD simulations with a new interatomic potential, designed to reproduce ab initio calculations at the laser-induced electronic temperature of 18946 K. The simulations demonstrated that, similarly to thermal melting, nonthermal phase transition occurs through nucleation. A series of simulations showed that higher (lower) initial pressure reinforces (hinders) the creation and the growth of nonthermal liquid nuclei. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a face-centered cubic crystal structure. The results of this study, therefore, have important implications for interpretation of experimental data on the kinetics of melting process of semiconductors.