Nutrient cycling and field-based partial nutrient balances in two mountain oases of Oman

Little is known about nutrient fluxes as a criterion to assess the sustainability of traditional irrigation agriculture in eastern Arabia. In this study GIS-based field research on terraced cropland and groves of date palm (Phoenix dactylifera L.) was conducted over 2 years in two mountain oases of northern Oman to determine their role as hypothesized sinks for nitrogen (N), phosphorus (P) and potassium (K). At Balad Seet 55% of the 385 fields received annual inputs of 100–500 kg N ha^-1 and 26% received 500–1400 kg N ha^-1. No N was applied to 19% of the fields which were under fallow. Phosphorus was applied annually at 1–90 kg ha^-1 on 46% of the fields, whereas 27% received 90–210 kg ha^-1. No K was applied to 27% of the fields, 32% received 1–300 kg K ha^-1, and the remaining fields received up to 1400 kg ha^-1. At Maqta N-inputs were 61–277 kg ha^-1 in palm groves and 112–225 kg ha^-1 in wheat (Triticum spp.) fields, respective P inputs were 9–40 and 14–29 kg ha^-1, and K inputs were 98–421 and 113–227 kg ha^-1. For cropland, partial oasis balances (comprising inputs of manure, mineral fertilizers, N2-fixation and irrigation water, and outputs of harvested products) were similar for both oases, with per hectare surpluses of 131 kg N, 37 kg P, and 84 kg K at Balad Seet and of 136 kg N, 16 kg P and 66 kg K at Maqta. This was despite the fact that N2-fixation by alfalfa (Medicago sativa L.), estimated at up to 480 kg ha^-1 yr^-1 with an average total dry matter of 22 t ha^-1, contributed to the cropland N-balance only at the former site. Respective palm grove surpluses, in contrast were with 303 kg N, 38 kg P, and 173 kg K ha^-1 much higher at Balad Seet than with 84 kg N, 14 kg P, and 91 kg K ha^-1 at Maqta. The data show that both oases presently are large sinks for nutrients. Potential gaseous and leaching losses could at least partly be controlled by a decrease in nutrient input intensity and careful incorporation of manure.

Organic field-effect transistors and phototransistors based on amorphous materials

A comparison between the charge transport properties in low molecular amorphous thin films of spiro-linked compound and their corresponding parent compound has been demonstrated. The field-effect transistor method is used for extracting physical parameters such as field-effect mobility of charge carriers, ON/OFF ratios, and stability. In addition, phototransistors have been fabricated and demonstrated for the first time by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. The active materials used in this study can be divided into three classes, namely Spiro-linked compounds (symmetrically spiro-linked compounds), the corresponding parent-compounds, and photosensitive spiro-linked compounds (asymmetrically spiro-linked com-pounds). Some of symmetrically spiro-linked compounds used in this study were 2,2',7,7'-Tetrakis-(di-phenylamino)-9,9'-spirobifluorene (Spiro-TAD),2,2',7,7'-Tetrakis-(N,N'-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), 2,2',7,7'-Tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD), and 2,2Ž,7,7Ž-Tetra-(N-phenyl-1-naphtylamine)-9,9Ž-spirobifluorene (Spiro alpha-NPB). Related parent compounds of the symmetrically spiro-linked compound used in this study were N,N,N',N'-Tetraphenylbenzidine (TAD), N,N,N',N'-Tetrakis(4-methylphenyl)benzidine (TTB), N,N'-Bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and N,N'-Diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPB). The photosensitive asymmetrically spiro-linked compounds used in this study were 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(biphenyl-4-yl)-9,9'-spirobifluorene (Spiro-DPSP), and 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(spirobifluorene-2-yl)-9,9'-spirobifluorene (Spiro-DPSP^2). It was found that the field-effect mobilities of charge carriers in thin films of symmetrically spiro-linked compounds and their corresponding parent compounds are in the same order of magnitude (~10^-5 cm^2/Vs). However, the thin films of the parent compounds were easily crystallized after the samples have been exposed in ambient atmosphere and at room temperature for three days. In contrast, the thin films and the transistor characteristics of symmetrically spiro-linked compound did not change significantly after the samples have been stored in ambient atmosphere and at room temperature for several months. Furthermore, temperature dependence of the mobility was analyzed in two models, namely the Arrhenius model and the Gaussian Disorder model. The Arrhenius model tends to give a high value of the prefactor mobility. However, it is difficult to distinguish whether the temperature behaviors of the material under consideration follows the Arrhenius model or the Gaussian Disorder model due to the narrow accessible range of the temperatures. For the first time, phototransistors have been fabricated and demonstrated by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. Intramolecular charge transfer between a bis(diphenylamino)biphenyl unit and a sexiphenyl unit leads to an increase in charge carrier density, providing the amplification effect. The operational responsivity of better than 1 A/W can be obtained for ultraviolet light at 370 nm, making the device interesting for sensor applications. This result offers a new potential application of organic thin film phototransistors as low-light level and low-cost visible blind ultraviolet photodetectors.