Orthogonal polynomials and recurrence equations, operator equations and factorization

This article surveys the classical orthogonal polynomial systems of the Hahn class, which are solutions of second-order differential, difference or q-difference equations. Orthogonal families satisfy three-term recurrence equations. Example applications of an algorithm to determine whether a three-term recurrence equation has solutions in the Hahn class - implemented in the computer algebra system Maple - are given. Modifications of these families, in particular associated orthogonal systems, satisfy fourth-order operator equations. A factorization of these equations leads to a solution basis.

Bayes quadratic unbiased estimator of spatial covariance parameters

This work presents Bayes invariant quadratic unbiased estimator, for short BAIQUE. Bayesian approach is used here to estimate the covariance functions of the regionalized variables which appear in the spatial covariance structure in mixed linear model. Firstly a brief review of spatial process, variance covariance components structure and Bayesian inference is given, since this project deals with these concepts. Then the linear equations model corresponding to BAIQUE in the general case is formulated. That Bayes estimator of variance components with too many unknown parameters is complicated to be solved analytically. Hence, in order to facilitate the handling with this system, BAIQUE of spatial covariance model with two parameters is considered. Bayesian estimation arises as a solution of a linear equations system which requires the linearity of the covariance functions in the parameters. Here the availability of prior information on the parameters is assumed. This information includes apriori distribution functions which enable to find the first and the second moments matrix. The Bayesian estimation suggested here depends only on the second moment of the prior distribution. The estimation appears as a quadratic form y'Ay , where y is the vector of filtered data observations. This quadratic estimator is used to estimate the linear function of unknown variance components. The matrix A of BAIQUE plays an important role. If such a symmetrical matrix exists, then Bayes risk becomes minimal and the unbiasedness conditions are fulfilled. Therefore, the symmetry of this matrix is elaborated in this work. Through dealing with the infinite series of matrices, a representation of the matrix A is obtained which shows the symmetry of A. In this context, the largest singular value of the decomposed matrix of the infinite series is considered to deal with the convergence condition and also it is connected with Gerschgorin Discs and Poincare theorem. Then the BAIQUE model for some experimental designs is computed and compared. The comparison deals with different aspects, such as the influence of the position of the design points in a fixed interval. The designs that are considered are those with their points distributed in the interval [0, 1]. These experimental structures are compared with respect to the Bayes risk and norms of the matrices corresponding to distances, covariance structures and matrices which have to satisfy the convergence condition. Also different types of the regression functions and distance measurements are handled. The influence of scaling on the design points is studied, moreover, the influence of the covariance structure on the best design is investigated and different covariance structures are considered. Finally, BAIQUE is applied for real data. The corresponding outcomes are compared with the results of other methods for the same data. Thereby, the special BAIQUE, which estimates the general variance of the data, achieves a very close result to the classical empirical variance.

Fourier-Matrizen und Ringe mit Basis

Bei der Bestimmung der irreduziblen Charaktere einer Gruppe vom Lie-Typ entwickelte Lusztig eine Theorie, in der eine sogenannte Fourier-Transformation auftaucht. Dies ist eine Matrix, die nur von der Weylgruppe der Gruppe vom Lie-Typ abhängt. Anhand der Eigenschaften, die eine solche Fourier- Matrix erfüllen muß, haben Geck und Malle ein Axiomensystem aufgestellt. Dieses ermöglichte es Broue, Malle und Michel füur die Spetses, über die noch vieles unbekannt ist, Fourier-Matrizen zu bestimmen. Das Ziel dieser Arbeit ist eine Untersuchung und neue Interpretation dieser Fourier-Matrizen, die hoffentlich weitere Informationen zu den Spetses liefert. Die Werkzeuge, die dabei entstehen, sind sehr vielseitig verwendbar, denn diese Matrizen entsprechen gewissen Z-Algebren, die im Wesentlichen die Eigenschaften von Tafelalgebren besitzen. Diese spielen in der Darstellungstheorie eine wichtige Rolle, weil z.B. Darstellungsringe Tafelalgebren sind. In der Theorie der Kac-Moody-Algebren gibt es die sogenannte Kac-Peterson-Matrix, die auch die Eigenschaften unserer Fourier-Matrizen besitzt. Ein wichtiges Resultat dieser Arbeit ist, daß die Fourier-Matrizen, die G. Malle zu den imprimitiven komplexen Spiegelungsgruppen definiert, die Eigenschaft besitzen, daß die Strukturkonstanten der zugehörigen Algebren ganze Zahlen sind. Dazu müssen äußere Produkte von Gruppenringen von zyklischen Gruppen untersucht werden. Außerdem gibt es einen Zusammenhang zu den Kac-Peterson-Matrizen: Wir beweisen, daß wir durch Bildung äußerer Produkte von den Matrizen vom Typ A(1)1 zu denen vom Typ C(1) l gelangen. Lusztig erkannte, daß manche seiner Fourier-Matrizen zum Darstellungsring des Quantendoppels einer endlichen Gruppe gehören. Deswegen ist es naheliegend zu versuchen, die noch ungeklärten Matrizen als solche zu identifizieren. Coste, Gannon und Ruelle untersuchen diesen Darstellungsring. Sie stellen eine Reihe von wichtigen Fragen. Eine dieser Fragen beantworten wir, nämlich inwieweit rekonstruiert werden kann, zu welcher endlichen Gruppe gegebene Matrizen gehören. Den Darstellungsring des getwisteten Quantendoppels berechnen wir für viele Beispiele am Computer. Dazu müssen unter anderem Elemente aus der dritten Kohomologie-Gruppe H3(G,C×) explizit berechnet werden, was bisher anscheinend in noch keinem Computeralgebra-System implementiert wurde. Leider ergibt sich hierbei kein Zusammenhang zu den von Spetses herrührenden Matrizen. Die Werkzeuge, die in der Arbeit entwickelt werden, ermöglichen eine strukturelle Zerlegung der Z-Ringe mit Basis in bekannte Anteile. So können wir für die meisten Matrizen der Spetses Konstruktionen angeben: Die zugehörigen Z-Algebren sind Faktorringe von Tensorprodukten von affinen Ringe Charakterringen und von Darstellungsringen von Quantendoppeln.

Semantic network analysis of ontologies

A key argument for modeling knowledge in ontologies is the easy re-use and re-engineering of the knowledge. However, beside consistency checking, current ontology engineering tools provide only basic functionalities for analyzing ontologies. Since ontologies can be considered as (labeled, directed) graphs, graph analysis techniques are a suitable answer for this need. Graph analysis has been performed by sociologists for over 60 years, and resulted in the vivid research area of Social Network Analysis (SNA). While social network structures in general currently receive high attention in the Semantic Web community, there are only very few SNA applications up to now, and virtually none for analyzing the structure of ontologies. We illustrate in this paper the benefits of applying SNA to ontologies and the Semantic Web, and discuss which research topics arise on the edge between the two areas. In particular, we discuss how different notions of centrality describe the core content and structure of an ontology. From the rather simple notion of degree centrality over betweenness centrality to the more complex eigenvector centrality based on Hermitian matrices, we illustrate the insights these measures provide on two ontologies, which are different in purpose, scope, and size.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.