Relativistic ab initio calculations for ion-atom collisions

Within the independent particle model we solve the time-dependent single-particle equation using ab initio SCF-DIRAC-FOCK-SLATER wavefunctions as a basis. To reinstate the many-particle aspect of the collision system we use the inclusive probability formalism to answer experimental questions. As an example we show an application to the case of S{^15+} on Ar where experimental data on the K-K charge transfer are available for a wide range of impact energies from 4.7 to 90 MeV. Our molecular adiabatic calculations and the evaluation using the inclusive probability formalism show good results in the low energy range from 4.7 to 16 MeV impact energy.

{2p_\pi}-{2p_\sigma} crossing in heavy symmetric ion-atom collisions: I. Level structure

Ab initio self-consistent DFS calculations are performed for five different symmetric atomic systems from Ar-Ar to Pb-Pb. The level structure for the {2p_\pi}-{2p_\sigma} crossing as function of the united atomic charge Z_u is studied and interpreted. Manybody effects, spin-orbit splitting, direct relativistic effects as well as indirect relativistic effects are differently important for different Z_u. For the I-I system a comparison with other calculations is given.

Application of inclusive probability theory to heavy ion-atom collisions

Using the independent particle model as our basis we present a scheme to reduce the complexity and computational effort to calculate inclusive probabilities in many-electron collision system. As an example we present an application to K - K charge transfer in collisions of 2.6 MeV Ne{^9+} on Ne. We are able to give impact parameter-dependent probabilities for many-particle states which could lead to KLL-Auger electrons after collision and we compare with experimental values.

Evidence for an additional coupling of the innermost shells in very heavy quasi-molecular ion-atom collisions

Due to the tremendous spin-orbit splitting of quasi-molecular levels in superheavy collision systems (Z = Z_1 + Z_2 {\ge\approx} 137) bombarding energy 0.5-6 MeV N{^-1}, unusual couplings may occur around Z \simeq 165. Experimental evidence for such a theoretically predicted coupling is discussed.

Theoretical evidence for quasi-molecular structure at small internuclear distances in elastic ion-atom scattering

The potential energy curve of the system Ne-Ne is calculated for small internuclear distances from 0.005 to 3.0 au using a newly developed relativistic molecular Dirac-Fock-Slater code. A significant structure in the potential energy curve is found which leads to a nearly complete agreement with experimental differential elastic scattering cross sections. This demonstrates the presence of quasi-molecular effects in elastic ion-atom collisions at keV energies.

New calculations of P(b) curves for 1s_\sigma excitation in low-Z (Z\le10) ion-atom scattering

Ab initio fully relativistic SCF molecular calculations of energy eigenvalues as well as coupling-matrix elements are used to calculate the 1s_\sigma excitation differential cross section for Ne-Ne and Ne-O in ion-atom collisions. A relativistic perturbation treatment which allows a direct comparison with analogous non-relativistic calculations is also performed.

Entanglement analysis of atomic processes and quantum registers

During recent years, quantum information processing and the study of N−qubit quantum systems have attracted a lot of interest, both in theory and experiment. Apart from the promise of performing efficient quantum information protocols, such as quantum key distribution, teleportation or quantum computation, however, these investigations also revealed a great deal of difficulties which still need to be resolved in practise. Quantum information protocols rely on the application of unitary and non–unitary quantum operations that act on a given set of quantum mechanical two-state systems (qubits) to form (entangled) states, in which the information is encoded. The overall system of qubits is often referred to as a quantum register. Today the entanglement in a quantum register is known as the key resource for many protocols of quantum computation and quantum information theory. However, despite the successful demonstration of several protocols, such as teleportation or quantum key distribution, there are still many open questions of how entanglement affects the efficiency of quantum algorithms or how it can be protected against noisy environments. To facilitate the simulation of such N−qubit quantum systems and the analysis of their entanglement properties, we have developed the Feynman program. The program package provides all necessary tools in order to define and to deal with quantum registers, quantum gates and quantum operations. Using an interactive and easily extendible design within the framework of the computer algebra system Maple, the Feynman program is a powerful toolbox not only for teaching the basic and more advanced concepts of quantum information but also for studying their physical realization in the future. To this end, the Feynman program implements a selection of algebraic separability criteria for bipartite and multipartite mixed states as well as the most frequently used entanglement measures from the literature. Additionally, the program supports the work with quantum operations and their associated (Jamiolkowski) dual states. Based on the implementation of several popular decoherence models, we provide tools especially for the quantitative analysis of quantum operations. As an application of the developed tools we further present two case studies in which the entanglement of two atomic processes is investigated. In particular, we have studied the change of the electron-ion spin entanglement in atomic photoionization and the photon-photon polarization entanglement in the two-photon decay of hydrogen. The results show that both processes are, in principle, suitable for the creation and control of entanglement. Apart from process-specific parameters like initial atom polarization, it is mainly the process geometry which offers a simple and effective instrument to adjust the final state entanglement. Finally, for the case of the two-photon decay of hydrogenlike systems, we study the difference between nonlocal quantum correlations, as given by the violation of the Bell inequality and the concurrence as a true entanglement measure.

Non-Born-Oppenheimer Dynamics of Hydrogen Molecules in Strong Laser-Fields

Die Arbeit behandelt die numerische Untersuchung von Wasserstoff-Moleküldynamik in starken Laserfeldern. Im Speziellen wird die Struktur von Ionisationsspektren bei Einfach-Photoionisation betrachtet. Korrelationen zwischen Elektron- und Kernbewegung werden identifiziert und mit Effekten in den Energiespektren in Verbindung gebracht. Dabei wird stets auf die Integration der zeitabhängigen Schrödingergleichung zurückgegriffen.

Zur Herstellung von chiralen α-Aminosäuren mit α-quartären Zentren und deren Verwendung als Synthone in der organischen Synthese

Ziel dieser Arbeit war, ausgehend von alpha-Aminoaldehyden eine kurze und effiziente Synthese zur Darstellung von Aminosäuren mit alpha-quartären Zentren in enantiomerenreiner Form und davon ableitbare wichtige Synthone in der organischen Synthese zu entwickeln. Der enantiomerenreine 2-tert-Butyl-4-methyl-1,3-oxazolidin-4-carbaldehyd ist via kupfer-katalysierter Aziridinierung des enantiomerenangereicherten 2-tert-Butyl-5-methyl-4H-1,3-dioxins mit der Nitrenquelle (N-Tosylimino)phenyliodinan zugänglich. Eine anschließende Oxidation mit Natriumhyperchlorid und Wasserstoffperoxid führt zur korrespondierenden Carbonsäure, die via sauer katalysierter Acetalspaltung und nachfolgender Abspaltung der Tosyl-Schutzgruppe in enantiomerenreines alpha-Methylserin in sehr guten Ausbeuten umgewandelt werden kann. Mit dem Einsatz von in C5-Position Ethyl-substituiertem 2-tert-Butyl-4H-1,3-dioxin ist analog das N-Tosyl geschützte alpha-Ethylserin darstellbar. Um die bestehende Lösungsmittelabhängigkeit in weniger polaren Losungsmitteln wie Dichlormethan oder Diethylether der Aziridinierung in Bezug auf ihre Diastereoselektivität und Reaktivität zu minimieren, wurden unterschiedliche Nitrenquellen untersucht. [N-(p-Methoxybenzolsulfonyl)imino]methoxyphenyliodinan stellte sich als die potenteste Nitrenquelle heraus und die Ausbeute konnte auf bis zu 70% gesteigert werden. Die Anwendbarkeit des N-Tosyl geschützten alpha-Methylserins konnte mit der Synthese des β-Lactons und 2-Carboxylethylether-2-aziridin unter Mitsunobu-Bedingungen gezeigt werden. Dabei ist die Reaktion durch einfache Variation des Lösungsmittels und der Reaktionstemperatur zu beiden Produkten in sehr guten Ausbeuten hin steuerbar. Das β-Lacton konnte anschließend erfolgreich in das N-Tosyl- und S-Acetyl- geschützte alpha-Methylcystein überführt werden.

Electron-Nuclear Correlation in Laser-Driven Diatomic Molecules

The interaction of short intense laser pulses with atoms/molecules produces a multitude of highly nonlinear processes requiring a non-perturbative treatment. Detailed study of these highly nonlinear processes by numerically solving the time-dependent Schrodinger equation becomes a daunting task when the number of degrees of freedom is large. Also the coupling between the electronic and nuclear degrees of freedom further aggravates the computational problems. In the present work we show that the time-dependent Hartree (TDH) approximation, which neglects the correlation effects, gives unreliable description of the system dynamics both in the absence and presence of an external field. A theoretical framework is required that treats the electrons and nuclei on equal footing and fully quantum mechanically. To address this issue we discuss two approaches, namely the multicomponent density functional theory (MCDFT) and the multiconfiguration time-dependent Hartree (MCTDH) method, that go beyond the TDH approximation and describe the correlated electron-nuclear dynamics accurately. In the MCDFT framework, where the time-dependent electronic and nuclear densities are the basic variables, we discuss an algorithm to calculate the exact Kohn-Sham (KS) potentials for small model systems. By simulating the photodissociation process in a model hydrogen molecular ion, we show that the exact KS potentials contain all the many-body effects and give an insight into the system dynamics. In the MCTDH approach, the wave function is expanded as a sum of products of single-particle functions (SPFs). The MCTDH method is able to describe the electron-nuclear correlation effects as the SPFs and the expansion coefficients evolve in time and give an accurate description of the system dynamics. We show that the MCTDH method is suitable to study a variety of processes such as the fragmentation of molecules, high-order harmonic generation, the two-center interference effect, and the lochfrass effect. We discuss these phenomena in a model hydrogen molecular ion and a model hydrogen molecule. Inclusion of absorbing boundaries in the mean-field approximation and its consequences are discussed using the model hydrogen molecular ion. To this end, two types of calculations are considered: (i) a variational approach with a complex absorbing potential included in the full many-particle Hamiltonian and (ii) an approach in the spirit of time-dependent density functional theory (TDDFT), including complex absorbing potentials in the single-particle equations. It is elucidated that for small grids the TDDFT approach is superior to the variational approach.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Fluoreszenzspektroskopische Untersuchung von quantenmechanischen Interferenzeffekten am Xenon-Atom und an zweiatomigen Molekülen nach monochromatischer Anregung mit Synchrotronstrahlung

Mit der Methode der photoneninduzierten Fluoreszenzspektroskopie (PIFS) wurden spektro- und polarimetrische Fluoreszenzspektren des Xenon-Atoms und der NO- und CO-Moleküle untersucht. Im Bereich der Atomphysik konnten für das Xenon-Atom eindeutige Fluoreszenzkaskadeneffekte vom sichtbaren (VIS) in den vakuumultravioleten (VUV) Spektralbereich beobachtet werden. Das untersuchte Energieintervall zeichnete sich durch 15 gefundene Resonanzen entlang der Anregungsenergieachse der Synchrotronphotonen aus, die auf doppeltangeregte nln′l′-Resonanzen zurückgeführt werden konnten. Im Bereich der Molekülphysik wurden Messdaten der NO A 1Π → X 1Σ+- und CO A 2Π → X 2Σ+-Fluoreszenz nach der Anregung der 1s−1 → 2π-Resonanz untersucht. Durch polarimetrische Untersuchungen konnten in beiden Fällen die Winkelanisotropieparameter β(ω) der Fluoreszenz ermittelt werden und mit ab initio Berechnungen mit unterschiedlichen theoretischen Näherungen vergleichen werden. Der Einfluss quantenmechanischer Interferenzeffekte (LVI und ESI) auf die Winkelanisotropieparameter wurde aufgezeigt. Im Falle des NO- und des CO-Moleküls konnte eine sehr gute Übereinstimmung zwischen der Theorie und dem Experiment nachgewiesen werden. Durch Pioniermessungen an Diamantoiden konnte erstmalig dispergierte Lumineszenz der kleinsten Vertreter der Nanodiamanten nachgewiesen werden. Diese Messungen legen eine Grundlage für eine systematische Erforschung der Nanokristalle zugrunde.