Predicted properties of the superheavy elements. III. Element 115, Eka-Bismuth

Element 115 is expected to be in group V-a of the periodic table and have most stable oxidation states of I and III. The oxidation state of I, which plays a minor role in bismuth chemistry, should be a major factor in 115 chemistry. This change will arise because of the large relativistic splitting of the spherically symmetric 7p_l/2 shell from the 7P_3/2 shell. Element 115 will therefore have a single 7p_3/2 electron outside a 7p^2_1/2 closed shell. The magnitude of the first ionization energy and ionic radius suggest a chemistry similar to Tl^+. Similar considerations suggest that 115^3+ will have a chemistry similar to Bi^3+. Hydrolysis will therefore be easy and relatively strongly complexing anions of strong acids will be needed in general to effect studies of complexation chemistry. Some other properties of 115 predicted are as follows: ionization potentials I 5.2 eV, II 18.1 eV, III 27.4 eV, IV 48.5 eV, 0 \rightarrow 5^+ 159 eV; heat of sublimation, 34 kcal (g-atom)^-1; atomic radius, 2.0 A; ionic radius, 115^+ 1.5 A, 115^3+ 1.0 A; entropy, 16 cal deg^-1 (g-atom)^-l (25°); standard electrode potential 115^+ |115, -1.5 V; melting and boiling points are similar to element 113.

Photoionization of Kr 4s: III. Detailed and extended measurements of the Kr 4s-electron ionization cross section

Absolute Kr 4s-electron photoionization cross sections as a function of the exciting-photon energy were measured by photon-induced fluorescence spectroscopy (PIFS) at improved primary-energy resolution. The cross sections were determined from threshold to 33.5 eV and to 90 eV with primary-photon bandwidths of 25 meV and 50 meV, respectively. The measurements were compared with experimental data and selected theoretical calculations for the direct Kr 4s-electron photoionization cross sections.

Relativistic effects in physics and chemistry of element 105. [Part] III.

Electronic structures of MOCl_3 and MOBr_3 molecules, where M = V, Nb, Ta, Pa, and element 105, hahnium, have been calculated using the relativistic Dirac-Slater discrete variational method. The character of bonding has been analyzed using the Mulliken population analysis of the molecular orbitals. It was shown that hahnium oxytrihalides have similar properties to oxytrihalides of Nb and Ta and that hahnium has the highest tendency to form double bond with oxygen. Some peculiarities in the electronic structure of HaOCl_3 and HaOBr_3 result from relativistic effects. Volatilities of the oxytrihalides in comparison with the corresponding pentahalides were considered using results of the present calculations. Higher ionic character and lower covalency as well as the presence of dipole moments in MOX_3 (X = Cl, Br) molecules compared to analogous MX_5 ones are the factors contributing to their lower volatilities.

Predicted properties of the superheavy elements, II. Element 111, Eka-Gold

The chemical properties of element 111, eka-gold, are predicted through the use of the periodic table, relativistic Hartee-Fock-Slater calculations, and various qualitative theories which have established their usefulness in understanding and correlating properties of molecules. The results indicate that element 111 will be like Au(III) in its chemistry with little or no tendency to show stability in the I or II states. There is a possibility that the 111 - ion, analogous to the auride ion, will be stable.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.