Magnetische Kopplungen in magneto-optischen Speicherschichten

Im Rahmen dieser Arbeit wurden magneto-optische Speicherschichten und ihre Kopplungen untereinander untersucht. Hierzu wurden zum Einen die für die magneto-optische Speichertechnologie "klassischen" Schichten aus RE/TM-Legierungen verwendet, zum Anderen aber auch erfolgreich Granate integriert, die bisher nicht in diesem Anwendungsgebiet verwendet wurden. Einleitend werden die magneto-optischen Verfahren, die resultierenden Anforderungen an die dünnen Schichten und die entsprechenden physikalischen Grundlagen diskutiert. Außerdem wird auf das Hochfrequenz-Sputtern von RE/TM-Legierungen eingegangen und die verwendeten magneto-optischen Messverfahren werden erläutert [Kap. 2 & 3]. Die Untersuchungen an RE/TM-Schichten bestätigen die aus der Literatur bekannten Eigenschaften. Sie lassen sich effektiv, und für magneto-optische Anwendungen geeignet, über RF-Sputtern herstellen. Die unmittelbaren Schicht-Parameter, wie Schichtdicke und Terbium-Konzentration, lassen sich über einfache Zusammenhänge einstellen. Da die Terbium-Konzentration eine Änderung der Kompensationstemperatur bewirkt, lässt sich diese mit Messungen am Kerr-Magnetometer überprüfen. Die für die Anwendung interessante senkrechte magnetische Anisotropie konnte ebenfalls mit den Herstellungsbedingungen verknüpft werden. Bei der Herstellung der Schichten auf einer glatten Glas-Oberfläche (Floatglas) zeigt die RE/TM-Schicht bereits in den ersten Lagen ein Wachstumsverhalten, das eine senkrechte Anisotropie bewirkt. Auf einer Quarzglas- oder Keramik-Oberfläche wachsen die ersten Lagen in einer durch das Substrat induzierten Struktur auf, danach ändert sich das Wachstumsverhalten stetig, bis eine senkrechte Anisotropie erreicht wird. Dieses Verhalten kann auch durch verschiedene Pufferschichten (Aluminium und Siliziumnitrid) nur unwesentlich beeinflusst werden [Kap. 5 & Kap. 6]. Bei der direkten Aufbringung von Doppelschichten, bestehend aus einer Auslese-Schicht (GdFeCo) auf einer Speicherschicht (TbFeCo), wurde die Austausch-Kopplung demonstriert. Die Ausleseschicht zeigt unterhalb der Kompensationstemperatur keine Kopplung an die Speicherschicht, während oberhalb der Kompensationstemperatur eine direkte Kopplung der Untergitter stattfindet. Daraus ergibt sich das für den MSR-Effekt erwünschte Maskierungsverhalten. Die vorher aus den Einzelschichten gewonnen Ergebnisse zu Kompensationstemperatur und Wachstumsverhalten konnten in den Doppelschichten wiedergefunden werden. Als Idealfall erweist sich hier die einfachste Struktur. Man bringt die Speicherschicht auf Floatglas auf und bedeckt diese direkt mit der Ausleseschicht [Kap. 7]. Weiterhin konnte gezeigt werden, dass es möglich ist, den Faraday-Effekt einer Granatschicht als verstärkendes Element zu nutzen. Im anwendungstauglichen, integrierten Schichtsystem konnten die kostengünstig, mit dem Sol-Gel-Verfahren produzierten, Granate die strukturellen Anforderungen nicht erfüllen, da sich während der Herstellung Risse und Löcher gebildet haben. Bei der experimentellen Realisierung mit einer einkristallinen Granatschicht und einer RE/TM-Schicht konnte die prinzipielle Eignung des Schichtsystems demonstriert werden [Kap. 8].

Beschreibung von Oberflächenphänomenen durch relativistische Clusterrechnungen unter Verwendung eines Einbettungsverfahrens

For the theoretical investigation of local phenomena (adsorption at surfaces, defects or impurities within a crystal, etc.) one can assume that the effects caused by the local disturbance are only limited to the neighbouring particles. With this model, that is well-known as cluster-approximation, an infinite system can be simulated by a much smaller segment of the surface (Cluster). The size of this segment varies strongly for different systems. Calculations to the convergence of bond distance and binding energy of an adsorbed aluminum atom on an Al(100)-surface showed that more than 100 atoms are necessary to get a sufficient description of surface properties. However with a full-quantummechanical approach these system sizes cannot be calculated because of the effort in computer memory and processor speed. Therefore we developed an embedding procedure for the simulation of surfaces and solids, where the whole system is partitioned in several parts which itsself are treated differently: the internal part (cluster), which is located near the place of the adsorbate, is calculated completely self-consistently and is embedded into an environment, whereas the influence of the environment on the cluster enters as an additional, external potential to the relativistic Kohn-Sham-equations. The basis of the procedure represents the density functional theory. However this means that the choice of the electronic density of the environment constitutes the quality of the embedding procedure. The environment density was modelled in three different ways: atomic densities; of a large prepended calculation without embedding transferred densities; bulk-densities (copied). The embedding procedure was tested on the atomic adsorptions of 'Al on Al(100) and Cu on Cu(100). The result was that if the environment is choices appropriately for the Al-system one needs only 9 embedded atoms to reproduce the results of exact slab-calculations. For the Cu-system first calculations without embedding procedures were accomplished, with the result that already 60 atoms are sufficient as a surface-cluster. Using the embedding procedure the same values with only 25 atoms were obtained. This means a substantial improvement if one takes into consideration that the calculation time increased cubically with the number of atoms. With the embedding method Infinite systems can be treated by molecular methods. Additionally the program code was extended by the possibility to make molecular-dynamic simulations. Now it is possible apart from the past calculations of fixed cores to investigate also structures of small clusters and surfaces. A first application we made with the adsorption of Cu on Cu(100). We calculated the relaxed positions of the atoms that were located close to the adsorption site and afterwards made the full-quantummechanical calculation of this system. We did that procedure for different distances to the surface. Thus a realistic adsorption process could be examined for the first time. It should be remarked that when doing the Cu reference-calculations (without embedding) we begun to parallelize the entire program code. Only because of this aspect the investigations for the 100 atomic Cu surface-clusters were possible. Due to the good efficiency of both the parallelization and the developed embedding procedure we will be able to apply the combination in future. This will help to work on more these areas it will be possible to bring in results of full-relativistic molecular calculations, what will be very interesting especially for the regime of heavy systems.

Piezoresistive cantilevers with an integrated bimorph actuator

Scanning Probe Microscopy (SPM) has become of fundamental importance for research in area of micro and nano-technology. The continuous progress in these fields requires ultra sensitive measurements at high speed. The imaging speed limitation of the conventional Tapping Mode SPM is due to the actuation time constant of piezotube feedback loop that keeps the tapping amplitude constant. In order to avoid this limit a deflection sensor and an actuator have to be integrated into the cantilever. In this work has been demonstrated the possibility of realisation of piezoresistive cantilever with an embedded actuator. Piezoresistive detection provides a good alternative to the usual optical laser beam deflection technique. In frames of this thesis has been investigated and modelled the piezoresistive effect in bulk silicon (3D case) for both n- and p-type silicon. Moving towards ultra-sensitive measurements it is necessary to realize ultra-thin piezoresistors, which are well localized to the surface, where the stress magnitude is maximal. New physical effects such as quantum confinement which arise due to the scaling of the piezoresistor thickness was taken into account in order to model the piezoresistive effect and its modification in case of ultra-thin piezoresistor (2D case). The two-dimension character of the electron gas in n-type piezoresistors lead up to decreasing of the piezoresistive coefficients with increasing the degree of electron localisation. Moreover for p-type piezoresistors the predicted values of the piezoresistive coefficients are higher in case of localised holes. Additionally, to the integration of the piezoresistive sensor, actuator integrated into the cantilever is considered as fundamental for realisation of fast SPM imaging. Actuation of the beam is achieved thermally by relying on differences in the coefficients of thermal expansion between aluminum and silicon. In addition the aluminum layer forms the heating micro-resistor, which is able to accept heating impulses with frequency up to one megahertz. Such direct oscillating thermally driven bimorph actuator was studied also with respect to the bimorph actuator efficiency. Higher eigenmodes of the cantilever are used in order to increase the operating frequencies. As a result the scanning speed has been increased due to the decreasing of the actuation time constant. The fundamental limits to force sensitivity that are imposed by piezoresistive deflection sensing technique have been discussed. For imaging in ambient conditions the force sensitivity is limited by the thermo-mechanical cantilever noise. Additional noise sources, connected with the piezoresistive detection are negligible.