Spectral dependence of third order nonlinear optical susceptibility of zinc phthalocyanine

Wavelength dependence of saturable absorption (SA) and reverse saturable absorption (RSA) of zinc phthalocyanine was studied using 10 Hz, 8 ns pulses from a tunable laser, in the wavelength range of 520–686 nm, which includes the rising edge of the Q band in the electronic absorption spectrum. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed as the excitation wavelength changes from the low absorption window region to higher absorption regime near the Q band. The SA again changes back to RSA when we further move over to the infrared region. Values of the imaginary part of third order susceptibility are calculated for various wavelengths in this range. This study is important in identifying the spectral range over which the nonlinear material acts as RSA based optical limiter.

Spectral dependence of third order nonlinear optical susceptibility of zinc phthalocyanine

Wavelength dependence of saturable absorption (SA) and reverse saturable absorption (RSA) of zinc phthalocyanine was studied using 10 Hz, 8 ns pulses from a tunable laser, in the wavelength range of 520–686 nm, which includes the rising edge of the Q band in the electronic absorption spectrum. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed as the excitation wavelength changes from the low absorption window region to higher absorption regime near the Q band. The SA again changes back to RSA when we further move over to the infrared region. Values of the imaginary part of third order susceptibility are calculated for various wavelengths in this range. This study is important in identifying the spectral range over which the nonlinear material acts as RSA based optical limiter.

Spray Pyrolysed Zinc Oxide Thin Films : Effects of Doping and Ion Beam Irradiation

In recent years scientists have made rapid and significant advances in the field of semiconductor physics. One of the most important fields of current interest in materials science is the fundamental aspects and applications of conducting transparent oxide thin films (TCO). The characteristic properties of such coatings are low electrical resistivity and high transparency in the visible region. The first semitransparent and electrically conducting CdO film was reported as early as in 1907 [1]. Though early work on these films was performed out of purely scientific interest, substantial technological advances in such films were made after 1940. The technological interest in the study of transparent semiconducting films was generated mainly due to the potential applications of these materials both in industry and research. Such films demonstrated their utility as transparent electrical heaters for windscreens in the aircraft industry. However, during the last decade, these conducting transparent films have been widely used in a variety of other applications such as gas sensors [2], solar cells [3], heat reflectors [4], light emitting devices [5] and laser damage resistant coatings in high power laser technology [6]. Just a few materials dominate the current TCO industry and the two dominant markets for TCO’s are in architectural applications and flat panel displays. The architectural use of TCO is for energy efficient windows. Fluorine doped tin oxide (FTO), deposited using a pyrolysis process is the TCO usually finds maximum application. SnO2 also finds application ad coatings for windows, which are efficient in preventing radiative heat loss, due to low emissivity (0.16). Pyrolitic tin oxide is used in PV modules, touch screens and plasma displays. However indium tin oxide (ITO) is mostly used in the majority of flat panel display (FPD) applications. In FPDs, the basic function of ITO is as transparent electrodes. The volume of FPD’s produced, and hence the volume of ITO coatings produced, continues to grow rapidly. But the current increase in the cost of indium and the scarcity of this material created the difficulty in obtaining low cost TCOs. Hence search for alternative TCO materials has been a topic of active research for the last few decades. This resulted in the development of binary materials like ZnO, SnO2, CdO and ternary materials like II Zn2SnO4, CdSb2O6:Y, ZnSO3, GaInO3 etc. The use of multicomponent oxide materials makes it possible to have TCO films suitable for specialized applications because by altering their chemical compositions, one can control the electrical, optical, chemical and physical properties. But the advantages of using binary materials are the easiness to control the chemical compositions and depositions conditions. Recently, there were reports claiming the deposition of CdO:In films with a resistivity of the order of 10-5 ohm cm for flat panel displays and solar cells. However they find limited use because of Cd-Toxicity. In this regard, ZnO films developed in 1980s, are very useful as these use Zn, an abundant, inexpensive and nontoxic material. Resistivity of this material is still not very low, but can be reduced through doping with group-III elements like In, Al or Ga or with F [6]. Hence there is a great interest in ZnO as an alternative of ITO. In the present study, we prepared and characterized transparent and conducting ZnO thin films, using a cost effective technique viz Chemical Spray Pyrolysis (CSP). This technique is also suitable for large area film deposition. It involves spraying a solution, (usually aqueous) containing soluble salts of the constituents of the desired compound, onto a heated substrate.

A Novel Accelerator Combination for the Low Temperature Curing of Silica-Filled NBR Compounds

Zinc salts of ethyl, isopropyl, and butyl xanthates were prepared in the laboratory. The effect of these xanthates in combination with zinc diethyldithiocarbamate (ZDC) on the vulcanization of silica-filled NBR compounds has been studied at different temperatures. The cure times of these compounds were compared with that of NBR compounds containing tetramethylthiuram disulphide/dibenzthiazyl disulphide. The rubber compounds with the xanthates and ZDC were cured at various temperatures from 60 to 150°C. The sheets were molded and properties such as tensile strength, tear strength, crosslink density, elongation at break, compression set, abrasion resistance, flex resistance, heat buildup, etc. were evaluated. The properties showed that zinc salt of xanthate/ZDC combination has a positive synergistic effect on the cure rate and mechanical properties of NBR compounds.

Synergism of Xanthate/Dithiocarbamate Accelerator in Carbon Black Filled NR Compounds

Zinc salts of ethyl, isopropyl and butyl xanthates were prepared in the laboratory. The effect of these xanthates with zinc diethyldithiocarbamate (ZDC) on the vulcanization of HAF filled NR compound has been studied at different temperatures. The rubber compounds with the three xanthate accelerators and ZDC were cured at various temperatures from 60°C to 150°C. The sheets were moulded and properties such as tensile strength , tear strength , cross-link density, elongation -at-break, compression set, heat build up, abrasion resistance, flex resistance , etc. were evaluated . The properties showed that zinc xanthate/ZDC accelerator combination has a positive synergistic effect on the mechanical properties of NR compounds. The curing of HAF filled NR compound containing zinc xanthate /ZDC is slightly slower than the curing of the corresponding gum compounds . It is observed that, by gradually increasing the amount of the accelerator, the cure time of black filled NR compound can be made equal to that of the gum compou

Studies on metal complexes with acylhydrazones based on heterocyclic carbonyl compounds

Dept.of Applied Chemistry, Cochin University of Science and Technology

An investigation on the preparation and properties of certian semiconducting sulphide thin films

In this thesis the preparation and properties of thin films of certain semiconducting sulphides (sulphides of tin, copper and indium) are reported. As single source evaporation does not yield satisfactory films of these compounds for a variety of reasons, reactive evaporation of the metal in a sulphur atmosphere has been used for film preparation. It was found that for each metal sulphide a stoichimetric interval of fluxes and substrate temperature exists for the formation of the compound in accordance with the analysis of Guenther. The first chapter of the thesis gives a resume of the basic principles of semiconductor physics relevant to the work reported here. In the second chapter is discussed in detail the reactive evaporation techniques like ordinary reactive evaporation, activated reactive evaporation and reactive ion plating. Third chapter deals with the experimental techniques used in this study for film preparation and characterization. In the next seven chapters is discussed the preparation and properties of the compound films studied. The last chapter gives a general theory of the formation of compound films in various deposition techniques in terms of the kinetic energy of the film forming particles. It must be mentioned here that this is of fundamental importance to thin film deposition and is virtually untouched in the literature

Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases

One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.

Bioremediation of Zinc Using Bacillus sp. Isolated from Metal- Contaminated Industrial Zone

The production of heavy metals has increased quickly since the industrial revolution. Heavy metals frequently form compounds that can be toxic, carcinogenic, or mutagenic, even in very small concentrations. The usual techniques of removing metals from wastewaters are in general expensive and have many restrictions. Alternative methods of metal removal and recovery based on biological materials have been measured. Among various agents, the use of microbes for the removal of metals from industrial and municipal wastewater has been proposed as a promising alternative to conventional heavy metal management strategies in past decades. Thus, the present study aims to isolate and characterize bacteria from soil, sediment, and waters of metal-contaminated industrial area to study the zinc resistance patterns and the zinc bioaccumulation potential of the selected microorganism. Zinc analysis of the samples revealed that concentrations varying from 39.832 m g/L to 310.24 m g/L in water, 12.81 m g/g to 407.53 m g/g in soil, and 81.06 m g/g to 829.54 m g/g in sediment are present. Bacterial zinc resistance study showed that tolerance to Zn was relatively low (<500 m g/ml). Ten bacterial genera were represented in soil and 11 from water, while only 5 bacterial genera were recorded from sediment samples. Bacillus, Pseudomonas , and Enterobacter were found in soil, sediment, and water samples. Highly zincresistant Bacillus sp. was selected for zinc removal experiment. Zinc removal studies revealed that at pH 5 about 40% reduction occurs; at pH 7, 25% occurs; and at pH 9, 50% occurs. Relatively an increased removal of Zinc was observed in the fi rst day of the experiment by Bacillus sp. The metal bioaccumulative potential of the selected isolates may have possible applications in the removal and recovery of zinc from industrial ef fluents.