Photoemission optogalvanic effect near the instability region of a hollow cathode discharge

The photoemission optogalvanic (POG) effect has been investigated in a neon-neodymium hollow cathode discharge using cw laser excitation. Both positive and negative effects were observed. It was found that the amplitude of the POG signal was unstable near the instability region of the discharge.

The photoemission optogalvanic effect in a Ne-Nd hollow cathode

Laser-induced photoelectric and photoemission optogalvanic effects in a Ne-Nd hollow cathode discharge have been studied using a continuous wave laser source. The potential barrier for photoinduced electron emission from the cathode decreases as the applied voltage is increased. Owing to secondary electron emission in the plasma, the photocurrent is greater than that without discharge. The multiplication of secondary electrons and the quantum efficiency are also investigated.

Subcritical Hopf bifurcation in Ne-Nd hollow cathode discharge

We report the experimental observation of subcritical Hopf bifurcation and the existence of non-oscillating “windows” in the dynamics of a Ne-Nd hollow cathode discharge current as the control parameter.

Modification of spectral characteristics and optogalvanic response in neon hollow cathode under laser excitation

The changes in emission characteristics of a neon hollow cathode discharge by resonant laser excitation of 1s 5→2p 2 and 1s 5→2p 4 transition have been studied by simultaneously monitoring the optogalvanic effect and the laser induced fluorescence. It has been observed that resonant excitation causes substantial variation in the relative intensities of lines in the emission spectrum of neon discharge.

Strip-loaded hollow dielectric H-plane sectoral horn antennas for square radiation pattern

The radiation characteristics of a new type of hollow dielectric H-plane sectoral horn antenna are presented. Metallic strips of optimum length are loaded on the H-walls of the sectoral horns. The effects of strip loading for producing square patterns in the H plane are discussed.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Investigations on the radiation characteristics of new hollow dielectric horn antennas

Investigations on the design and development of certain new hollow dielectric hom antennas of rectangular cross section have been carried out. The main shortcoming of the existing ordinary hollow dielectric hom antenna (HDH) is the abrupt discontinuity at the feed-end. A new launching technique using a dielectric rod is introduced to overcome this limitation. Also a strip loading technique is employed for further modification of the antenna. Radiation parameters of new I-IDH antennas of Eplane sectoral, H-plane sectoral and pyramidal types were studied and are found to be very attractive. Theoretical approach based on Marcatili’s principle and two aperture theory along with diffraction theory and image theory is used to support the experimental findings. The HDH is considered as solid horn of effective dielectric constant and the aperture field is evaluated. The antenna is excited by the open waveguide in the dominant TE1o mode and so the existence of any hybrid mode is mled-out. The theoretical results are observed to be in good agreement with the experimental results.