A Comaparison Study of EM and Physical Equivalent Circuit Modeling for MIM CMOS Capacitors

In this Letter a new physical model for metal-insulatormetal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors

Artificial neural network modeling for surface roughness prediction in cylindrical grinding of Al‐SiCp metal matrix composites and ANOVA analysis

Metal matrix composites (MMC) having aluminium (Al) in the matrix phase and silicon carbide particles (SiCp) in reinforcement phase, ie Al‐SiCp type MMC, have gained popularity in the re‐cent past. In this competitive age, manufacturing industries strive to produce superior quality products at reasonable price. This is possible by achieving higher productivity while performing machining at optimum combinations of process variables. The low weight and high strength MMC are found suitable for variety of components