Estimation of Effective Impervious Surface Area of Cochin using Satellite Images

Urbanization refers to the process in which an increasing proportion of a population lives in cities and suburbs. Urbanization fuels the alteration of the Land use/Land cover pattern of the region including increase in built-up area, leading to imperviousness of the ground surface. With increasing urbanization and population pressures; the impervious areas in the cities are increasing fast. An impervious surface refers to an anthropogenic ally modified surface that prevents water from infiltrating into the soil. Surface imperviousness mapping is important for the studies related to water cycling, water quality, soil erosion, flood water drainage, non-point source pollution, urban heat island effect and urban hydrology. The present study estimates the Total Impervious Area (TIA) of the city of Kochi using high resolution satellite image (LISS IV, 5m. resolution). Additionally the study maps the Effective Impervious Area (EIA) by coupling the capabilities of GIS and Remote Sensing. Land use/Land cover map of the study area was prepared from the LISS IV image acquired for the year 2012. The classes were merged to prepare a map showing pervious and impervious area. Supervised Maximum Likelihood Classification (Supervised MLC),which is a simple but accurate method for image classification, is used in calculating TIA and an overall classification accuracy of 86.33% was obtained. Water bodies are 100% pervious, whereas urban built up area are 100% impervious. Further based on percentage of imperviousness, the Total Impervious Area is categorized into various classes

CuInS2/In2S3 Cells using a Cost-effective Technique: Significance of Precursor Ratios on Cell Parameters

Thin film solar cells having structure CuInS2/In2S3 were fabricated using chemical spray pyrolysis (CSP) technique over ITO coated glass. Top electrode was silver film (area 0.05 cm2). Cu/In ratio and S/Cu in the precursor solution for CuInS2 were fixed as 1.2 and 5 respectively. In/S ratio in the precursor solution for In2S3 was fixed as 1.2/8. An efficiency of 0.6% (fill factor -37.6%) was obtained. Cu diffusion to the In2S3 layer, which deteriorates junction properties, is inevitable in CuInS2/In2S3 cell. So to decrease this effect and to ensure a Cu-free In2S3 layer at the top of the cell, Cu/In ratio was reduced to 1. Then a remarkable increase in short circuit current density was occurred from 3 mA/cm2 to 14.8 mA/cm2 and an efficiency of 2.13% was achieved. Also when In/S ratio was altered to 1.2/12, the short circuit current density increased to 17.8 mA/cm2 with an improved fill factor of 32% and efficiency remaining as 2%. Thus Cu/In and In/S ratios in the precursor solutions play a crucial role in determining the cell parameters