Utilisation of IIR Tube Reclaim for Developing NR/IIR Blends

Butyl (IIR) tube reclaim (RR) was mixed with carbon black filled natural rubber (NR) compounds at various percentages. The blend containing a low percentage of RR was found to show improved ageing resistance and improved processability with out much reduction in the mechanical properties.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

An investigation on the effects of Ag addition in the powder — in tube processing of long multifilamentary (Bi,Pb) - 2223/Ag superconducting tapes

It is important that long superconducting tape must have desired strain tolerance (less reduction of Jc with applied strains) and stress tolerance (less reduction of JC in applied stresses) for its use as coils and magnets. Ag addition to the BPSCCO system has many advantages with its physical and chemical inertness to the system, reduces the processing temperature, and promotes the grain growth, grain alignment and connectivity. All these not only enhance the critical current density of the tapes but also improve the mechanical properties. But the published results show very much scattering on the type of Ag additive to be selected, method of addition and its optimum percentage. Also there are some negative reports in this regard. The present work has been undertaken to study the effect of silver addition in different forms (Ag powder, Ag2O, AgNO3) on the superconducting and mechanical properties of (Bi,Pb)-2223/Ag tapes and to find out a suitable form of Ag additive and its optimum percentage to have better superconducting and mechanical properties. Also it is the aim of the present work is to optimise the process parameters needed to prepare (Bi,Pb)-2223/Ag multifilamentary tapes of length ~ 12 m in solenoid and pancake coil forms with good critical current density and homogeneity of J C along the length of the tapes.