7 resultados para all dielectric pulse compressor gratings

em Cochin University of Science


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In this article, we report the preparation of conducting natural rubber (NR) with polyaniline (Pani). NR was made into a conductive material by the compounding of NR with Pani in powder form. NR latex was made into a conductive material by the in situ polymerization of aniline in the presence of NR latex. Different compositions of Pani- NR semi-interpenetrating networks were prepared, and the dielectric properties of all of the samples were determined in microwave frequencies. The cavity perturbation techpique was used for this study. A HP8510 vector network analyzer with a rectangular cavity resonator was used for this study. S bands 2-4 GHz in frequency were used. Thermal studies were also carried out with thermogravimetric analysis and differential scanning calorimetry.

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In this article, we report the preparation of conducting natural rubber (NR) with polyaniline (Pani). NR was made into a conductive material by the compounding of NR with Pani in powder form. NR latex was made into a conductive material by the in situ polymerization of aniline in the presence of NR latex. Different compositions of Pani- NR semi-interpenetrating networks were prepared, and the dielectric properties of all of the samples were determined in microwave frequencies. The cavity perturbation techpique was used for this study. A HP8510 vector network analyzer with a rectangular cavity resonator was used for this study. S bands 2-4 GHz in frequency were used. Thermal studies were also carried out with thermogravimetric analysis and differential scanning calorimetry.

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The present work is an attempt to probe the elastic properties in some dielectric ceramics, by using ultrasonic pulse echo overlap technique. The base Ba6-xSm8+2xTi18O54 and Ca5Nb2TiO12 are very important dielectrics ceramics used for microwave communication as well as for substrate materials. Ultrasonic is one of the most widely used and powerful techniques to measure elastic properties of solids. The ultrasonic technique is nondestructive in nature and the measurements are relatively straightforward to perform. One unique advantantage of the ultrasonic technique is that both static and dynamic properties can be measured simultaneously. The velocity and attenuation coefficients of the ultrasonic waves propagating through a medium are related to the microscopic structure of the material and they provide valuable information about the structural changes in the system. Among the various ultrasonic techniques, the pulse echo overlap method is the most accurate and precise one. In the present case the decreased elastic properties of Cas-XMg,Nb2TiO12 and Cas-,ZnNb2TiO12 ceramics can be attributed to their mixture phases beyond x = 1. Moreover, the abrupt change in elastic properties observed for x >1 can also be correlated to the structural transformation of the materials from their phase pure form to mixture phases for higher extent of substitution of the concerned material . Ca4(ANb2Ti)012 (A = Mg, Zn) is the strongest compound with the maximum values for elastic properties . This could be due to the possible substitution of Mg/Zn ions with lesser radius [25] than Ca2+ in perovskite B-site of Ca(Cali4Nb2i4Tili4) O3 material to contribute more ordering and symmetry to the system [20]. All other compositions (x > 1) contain mixed-phases and for such mixed-phase samples, the mechanical properties are difficult to explain.

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The BaO-2CeO2-nTiO2 ceramics with n = 3, 4 and 5 have been prepared with CeO2 as starting material . The ceramics have been characterized using scanning electron microscopy , X-ray diffraction , Raman and X-ray photoelectron spectroscopy techniques. The microwave dielectric properties have been measured using standard dielectric resonator techniques . BaO-2CeO2-3TiO2 (123), BaO-2CeO2-4TiO2 ( 124) and BaO-2CeO2-5TiO2 ( 125) ceramics showed dielectric constants of 38, 27 and 32, respectively . All the ceramics showed fairly good unloaded Q - factors . 124 and 125 compounds exhibited low tf values, while 123 showed a high rf value

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This Thesis deals with the fabrication and characterization of novel all-fiber components for access networks. All fiber components offer distinctive advantages due to low forward and backward losses, epoxy free optical path and high power handling. A novel fabrication method for monolithic 1x4 couplers, which are vital components in distributed passive optical networks, is realized. The fabrication method differs from conventional structures with a symmetric coupling profile and hence offers ultra wideband performance and easy process control. New structure for 1x4 couplers, by fusing five fibers is proposed to achieve high uniformity, which gives equivalent uniformity performance to 1x4 planar lightwave splitters, isolation in fused fiber WDM is improved with integration of long period gratings. Packaging techniques of fused couplers are analyzed for long term stability.

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D.C. and a.c. electrical conductivities, dielectric constant and dielectric loss factor in single crystals of ethylenediammonium sulphate, (H3NCH2CH2NH3)(SO4), have been measured axiswise as a function of temperature. Anomalous variations in all the above properties at 480 K indicate the occurrence of a phase transition in the above material at this temperature. The existence of such a phase transition is also confirmed by DSC measurements. Electrical conductivity results are analysed and the activation energies of conduction at different temperature regions have been evaluated from the logσ vs 103T−1 plot. Possible mechanisms for the electrical conduction process are discussed, the available results being in favour of a proton transport model.

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A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.