40 resultados para Wide frequency range

em Cochin University of Science


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Flexile single layer electromagnetic wave absorbers were designed by incorporating appropriate amounts of carbon black in a nitrile butadiene rubber matrix along with an optimized amount of magnetic counterpart, namely, barium hexaferrite for applications in S, C, and X-bands. Effective dielectric permittivity and magnetic permeability were measured using cavity perturbation method in the frequency range of 2–12 GHz. The microwave absorbing characteristics of the composites were studied in the S, C, and X-bands employing a model in which an electromagnetic wave is incident normally on a metal terminated single layer. Reflection loss exceeding 20 dB is obtained for all the samples in a wide frequency range of 2–12 GHz when an appropriate absorber thickness between 5 and 9mm is chosen. The impact of carbon black is clearly observed in the optimized composites on the mechanical strength, thickness, band width of absorption, dielectric properties,

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In this work,we investigate novel designs of compact electronically reconfigurable dual frequency microstrip antennas with a single feed,operating mainly in L-band,without using any matching networks and complicated biasing circuitry.These antennas have been designed to operate in very popular frequency range where a great number of wireless communication applications exist.Efforts were carried out to introduce a successful,low cost reconfigurable dual-frequency microstrip antenna design to the wireless and radio frequency design community.

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A method for simultaneously enhancing the bandwidth and reducing the size of microstrip antennas (MSAs) using a modified ground plane (GP) has been proposed with design formulas. A combshaped truncated GP is used for this purpose. This method provides an overall compactness up to 85% for proximity-coupled MSAs in the frequency range of 900 MHz–5.5 GHz with an improvement inbandwidth up to seven times when compared with the conventional ones

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Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.

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A new PVC membrane sensor, which is highly selective towards Ni (II) ions, has been developed using a thiophene-derivative Schiff base as the ionophore. The best performance was exhibited by the membrane having the composition percentage ratio of 5:3:61:31 (ionophore:NaTPB:DBP:PVC) (w=w), where NaTPB is the anion excluder, sodium tetraphenylborate and DBP is the plasticizing agent (dibutyl phthalate). The membrane exhibited a good Nernstian response for nickel ions over the concentration range of 1.0 10 1– 5.0 10 6M (limit of detection is 1.8 10 6 M) with a slope of 29.5 1.0mV per decade of activity. It has a fast response time of<20 s and can be used for a period of 4 months with good reproducibility. The sensor is suitable for use in aqueous solutions of a wide pH range of 3.2–7.9. The sensor shows high selectivity to nickel ions over a large number of mono-, bi- and trivalent cations. It has been successfully used as an indicator electrode in the potentiometric titration of nickel ions against EDTA and also for direct determination of nickel content in real samples – wastewater samples from electroplating industries and Indian chocolates.

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A new PVC membrane sensor, which is highly selective towards Ni (II) ions, has been developed using a thiophene-derivative Schiff base as the ionophore. The best performance was exhibited by the membrane having the composition percentage ratio of 5:3:61:31 (ionophore:NaTPB:DBP:PVC) (w=w), where NaTPB is the anion excluder, sodium tetraphenylborate and DBP is the plasticizing agent (dibutyl phthalate). The membrane exhibited a good Nernstian response for nickel ions over the concentration range of 1.0 10 1– 5.0 10 6M (limit of detection is 1.8 10 6 M) with a slope of 29.5 1.0mV per decade of activity. It has a fast response time of<20 s and can be used for a period of 4 months with good reproducibility. The sensor is suitable for use in aqueous solutions of a wide pH range of 3.2–7.9. The sensor shows high selectivity to nickel ions over a large number of mono-, bi- and trivalent cations. It has been successfully used as an indicator electrode in the potentiometric titration of nickel ions against EDTA and also for direct determination of nickel content in real samples – wastewater samples from electroplating industries and Indian chocolates.

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new PVC membrane ion selective electrode which is highly selective towards Ni(II) ions was constructed using a Schiff base containing a binaphthyl moiety as the ionophore. The sensor exhibited a good Nernstian response for nickel ions over the concentration range 1.0 × 10–1 – 5.0 × 10–6 M with a lower limit of detection of 1.3 × 10–6 M. It has a fast response time and can be used for a period of 4 months with a good reproducibility. The sensor is suitable for use in aqueous solutions in a wide pH range of 3.6 – 7.4 and works satisfactorily in the presence of 25% (v/v) methanol or ethanol. The sensor shows high selectivity to nickel ions over a wide variety of cations. It has been successfully used as an indicator electrode in the potentiometric titration of nickel ions against EDTA and also for the direct determination of nickel content in real samples: effluent samples, chocolates and hydrogenated oils.

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A trapezoidal strip grating surface that eliminates specular reflections almost over the entire X -band frequency range for TM polarization is reported This new grating structure overcomes the bandwidth limitation of conventional rectangular strip grating surfaces

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Ceramic dielectrics with high dielectric constant in the microwave frequency range are used as filters, oscillators [I], etc. in microwave integrated circuits (MICs) particularly in modern communication systems like cellular telephones and satellite communications. Such ceramics, known as 'dielectric resonators (DRs),donot only offer miniaturisation and reduce the weight of the microwave components. but also improve the efficiency of MICs

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Ceramics of composition BaO-Ln2O3-STiO2 have been prepared with four elements (Ln=La,Pr,Nd.Sm) by a conventional solid state ceramic preparation route and the dielectric properties measured in the microwave frequency range

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The dielectric ceramics BaNd2Ti3Oto, BaNd2Ti4O12 and BaNd2Ti5O14 have been prepared by Conventional solid state ceramic route. The sintered ceramic samples have been characterized by X-ray diffraction and Scanning Electron Microscopy (SEM). The dielectric properties in the microwave frequency range have been measured using conventional microwave dielectric resonator methods. The BaNd2Ti1O10, BaN2Ti4O12 and BaNd2Ti5O14 have dielectric constants (Er) ~ 60, 84 and 77 respectively. They have relatively high quality factors

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A microwave dielectric ceramic resonator based on BaCe2Ti5O15 and Ba5Nb4O15 have been prepared by conventional solid state ceramic route. The dielectric resonators (DRs) have high dielectric constant 32 and 40 for BaCe2Ti5O15 and Ba5Nb4O15, respectively. The whispering gallery mode (WGM) technique was employed for the accurate determination of the dielectric properties in the microwave frequency range. The BaCe2Ti5O15 and Ba5Nb4O15 have quality factors (Q X F) of 30,600 and 53,000 respectively. The quality factor is found to depend on the azimuthal mode numbers. The temperature coefficient of resonant frequency (Tr) of BaCe2Ti5O15 and Ba5Nb4O15 have been measured accurately using different resonant modes and are + 41 and + 78 ppm/K, respectively

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The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of Ti02. The samples were synthesized using the mixed oxide rout.e. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnA12O4 ceramics exhibited interesting dielectric properties (dielectric constant (e,.) = 8.5, unloaded quality factor (Q.) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency (Tf) = -79 ppm/°C). Addition of Ti02 into the spinel improved its properties and the Tf approached zero for 0.83ZnAl2O4- 0.17TiO2• This temperature compensated composition has excellent microwave dielectric properties (Cr _ 12.67, Q, = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications

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Microwave dielectric resonators (DRs) based on Ba(B1,2Nbi/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In] complex perovskites have been prepared by conventional solid state ceramic route. The dielectric properties (relative permittivity, Er; quality factor, Q; and resonant frequency, rr) of the ceramics have been measured in the frequency range 4-6 GHz using resonance methods. The resonators have relatively high dielectric constant in the range 36-45, high quality factor and small temperature variation of resonant frequency. The dielectric properties are found to depend on the tolerance factor (t), ionic radius (r), and lattice parameter (ap)