Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Ultrasonic measurement of the elastic constants of selected nonlinear optical /semiorganic crystals with orthorhombic symmetry

Ultrasonic is a good tool to investigate the elastic properties of crystals. It enables one to determine all the elastic constants, Poisson’s ratios, volume compressibility and bulk modulus of crystals from velocity measurements. It also enables one to demonstrate the anisotropy of elastic properties by plotting sections of the surfaces of phase velocity, slowness, group velocity, Young’s modulus and linear compressibility along the a-b, b-c and a-c planes. They also help one to understand more about phonon amplification and help to interpret various phenomena associated with ultrasonic wave propagation, thermal conductivity, phonon transport etc. Study of nonlinear optical crystals is very important from an application point of view. Hundreds of new NLO materials are synthesized to meet the requirements for various applications. Inorganic, organic and organometallic or semiorganic classes of compounds have been studied for several reasons. Semiorganic compounds have some advantages over their inorganic and inorganic counterparts with regard to their mechanical properties. High damage resistance, high melting point, good transparency and non-hygroscopy are some of the basic requirements for a material to be suitable for device fabrication. New NLO materials are being synthesized and investigation of the mechanical and elastic properties of these crystals is very important to test the suitability of these materials for technological applications

Design and Analysis of Microstrip Lines with EBG-Backed Ground Planes of Different Geometrical Shapes

Propagation of electromagnetic waves through a microstrip line with 2D electromagnetic baud gap (EBG) structures of different geometrical shapes in the ground plane is investigated in this paper. Using transmission-line theory, the design equations for EBG structures are calculated. The measured, numerical. and simulated results are in gone) agreement

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Laser induced surface damage, thermal transport and microhardness studies on certain organic and semiorganic nonlinear optical crystals

N-alkyl-2,6-dimethyl-4(1H)-pyridinones, salts of 4-dimethylaminopyridine and 2-amino-5-nitropyridine are considered to be potential candidates for nonlinear optical (NLO) applications, in particular for the generation of blue-green laser radiation. Single crystals were grown following the slow evaporation technique at constant temperature. Single-shot laserinduced surface damage thresholds in the range 3–10 GW/cm2 were measured using a 18 ns Q-switched Nd:YAG laser. The surface morphologies of the damaged crystals were examined under an optical microscope and the nature of damage identified. The Vicker’s microhardness was determined at a load of 98.07 mN. The thermal transport properties, thermal diffusivity (α), thermal effusivity (e), thermal conductivity (K) and heat capacity (Cp), of the grown crystals were measured by an improved photopyroelectric technique at room temperature. All the results are presented and discussed.

Thermal transport across incommensurate phases in potassium selenate: photo-pyroelectric and calorimetric measurements

The thermal transport properties—thermal diffusivity, thermal conductivity and specific heat capacity—of potassium selenate crystal have been measured through the successive phase transitions, following the photo-pyroelectric thermal wave technique. The variation of thermal conductivity with temperature through the incommensurate (IC) phase of this crystal is measured. The enhancement in thermal conductivity in the IC phase is explained in terms of heat conduction by phase modes, and the maxima in thermal conductivity during transitions is due to enhancement in the phonon mean free path and the corresponding reduction in phonon scattering. The anisotropy in thermal conductivity and its variation with temperature are reported. The variation of the specific heat with temperature through the high temperature structural transition at 745 K is measured, following the differential scanning calorimetric method. By combining the results of photo-pyroelectric thermal wave methods and differential scanning calorimetry, the variation of the specific heat capacity with temperature through all the four phases of K2SeO4 is reported. The results are discussed in terms of phonon mode softening during transitions and phonon scattering by phase modes in the IC phase.

Laser Induced Photothermal Investigations on Thermal and Transport Properties of Certain Selected Photonic Materials

Discovery of coherent optical sources four decades ago has revolutionized all fields of scientific development. One of the path breaking applications of lasers is the emergence of various thermo optic techniques to unravel some of the mysteries of light matter interactions.Thermo optic technique is a valuable tool to evaluate optical and thermal properties of materials in solid,liquid and gaseous states .This technique can also be employed effectively in nondestructive quality evaluation. In this doctoral thesis , the use of photothermal techniques based on photoacoustic and photothermal deflection phenomena for the study of certain class of photonics materials such as semiconductors, nano metal dispersed ceramics, composites of conducting polymers and liquid crystals is elaborated.

Thermal transport, photoconduction and electrical switching in selected chalcogenide glasses exhibiting carrier type reversal

Department of Instrumentation, Cochin University of Science and Technology