Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho’s theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters—viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity—as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers.

Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions.

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

STUDIES ON THE CHARACTERISTICS OF TROPOSPHERE AND LOWER STRATOSPHERE ASSOCIATED WITH THE PASSAGE OF TROPICAL CYCLONES

In the present thesis, an attempt has been made to study the characteristics of troposphere and lower stratosphere during the passage of tropical cyclones from a tropical station in India using MST radar. MST radar is an excellent tool for studying various features of the atmosphere from ground to mesospheric heights, as it can be operated continuously with good time and altitude resolution. The major objectives are to identify the multiple layers of reflectivity observed in the atmosphere during cyclones, to study the troposphere characteristics during these cyclones and its dependence on cyclone position and intensity, to detect the waves present in the atmosphere, to study the transport of momentum fluxes and to understand stratosphere. The winds in the troposphere and lower stratosphere are greatly affected by the passage of cyclones; the presence of high reflectivity layers below the tropopause suggests the passage of severe weather systems etc. are some of the major findings of the study. The study can be extended further to understand the circulation and dynamics of the atmosphere associated with the passage of tropical cyclones. The gravity wave generation and its characteristics during the passage of storms is another important aspect to be studied in detail.

Laser induced surface damage, thermal transport and microhardness studies on certain organic and semiorganic nonlinear optical crystals

N-alkyl-2,6-dimethyl-4(1H)-pyridinones, salts of 4-dimethylaminopyridine and 2-amino-5-nitropyridine are considered to be potential candidates for nonlinear optical (NLO) applications, in particular for the generation of blue-green laser radiation. Single crystals were grown following the slow evaporation technique at constant temperature. Single-shot laserinduced surface damage thresholds in the range 3–10 GW/cm2 were measured using a 18 ns Q-switched Nd:YAG laser. The surface morphologies of the damaged crystals were examined under an optical microscope and the nature of damage identified. The Vicker’s microhardness was determined at a load of 98.07 mN. The thermal transport properties, thermal diffusivity (α), thermal effusivity (e), thermal conductivity (K) and heat capacity (Cp), of the grown crystals were measured by an improved photopyroelectric technique at room temperature. All the results are presented and discussed.

Thermal transport across incommensurate phases in potassium selenate: photo-pyroelectric and calorimetric measurements

The thermal transport properties—thermal diffusivity, thermal conductivity and specific heat capacity—of potassium selenate crystal have been measured through the successive phase transitions, following the photo-pyroelectric thermal wave technique. The variation of thermal conductivity with temperature through the incommensurate (IC) phase of this crystal is measured. The enhancement in thermal conductivity in the IC phase is explained in terms of heat conduction by phase modes, and the maxima in thermal conductivity during transitions is due to enhancement in the phonon mean free path and the corresponding reduction in phonon scattering. The anisotropy in thermal conductivity and its variation with temperature are reported. The variation of the specific heat with temperature through the high temperature structural transition at 745 K is measured, following the differential scanning calorimetric method. By combining the results of photo-pyroelectric thermal wave methods and differential scanning calorimetry, the variation of the specific heat capacity with temperature through all the four phases of K2SeO4 is reported. The results are discussed in terms of phonon mode softening during transitions and phonon scattering by phase modes in the IC phase.