Fabrication and Characterization of Dye Sensitized Polymer Films for Holographic Applications

Holographic technology is at the dawn of quick evolution in various new areas including holographic data storage, holographic optical elements, artificial intelligence, optical interconnects, optical correlators, commerce, medical practice, holographic weapon sight, night vision goggles and games etc. One of the major obstacles for the success of holographic technology to a large extent is the lack of suitable recording medium. Compared with other holographic materials such as dichromated gelatin and silver halide emulsions, photopolymers have the great advantage of recording and reading holograms in real time and the spectral sensitivity could be easily shifted to the type of recording laser used by simply changing the sensitizing dye. Also these materials possess characteristics such as good light sensitivity, real time image development, large dynamic range, good optical properties, format flexibility, and low cost. This thesis describes the attempts made to fabricate highly economic photopolymer films for various holographic applications. In the present work, Poly (vinyl alcohol) (PVA) and poly (vinyl chloride) (PVC) are selected as the host polymer matrices and methylene blue (MB) is used as the photosensitizing dye. The films were fabricated using gravity settling method. No chemical treatment or pre/post exposures were applied to the films. As the outcome of the work, photopolymer films with more than 70% efficiency, a permanent recording material which required no fixing process, a reusable recording material etc. were fabricated.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.