Young’s modulus of silicon nitride used in scanning force microscope cantilevers

The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness

Characterization of Selected Photonic Materials and Systems Using Photoacoustic Technique

The photoacoustic investigations carried out on different photonic materials are presented in this thesis. Photonic materials selected for the investigation are tape cast ceramics, muItilayer dielectric coatings, organic dye doped PVA films and PMMA matrix doped with dye mixtures. The studies are performed by the measurement of photoacoustic signal generated as a result of modulated cw laser irradiation of samples. The gas-microphone scheme is employed for the detection of photoacoustic signal. The different measurements reported here reveal the adaptability and utility of the PA technique for the characterization of photonic materials.Ceramics find applications in the field of microelectronics industry. Tape cast ceramics are the building blocks of many electronic components and certain ceramic tapes are used as thermal barriers. The thermal parameters of these tapes will not be the same as that of thin films of the same materials. Parameters are influenced by the presence of foreign bodies in the matrix and the sample preparation technique. Measurements are done on ceramic tapes of Zirconia, Zirconia-Alumina combination, barium titanate, barium tin titanate, silicon carbide, lead zirconate titanateil'Z'T) and lead magnesium niobate titanate(PMNPT). Various configurations viz. heat reflection geometry and heat transmission geometry of the photoacoustic technique have been used for the evaluation of different thermal parameters of the sample. Heat reflection geometry of the PA cell has been used for the evaluation of thermal effusivity and heat transmission geometry has been made use of in the evaluation of thermal diffusivity. From the thermal diffusivity and thermal effusivity values, thermal conductivity is also calculated. The calculated values are nearly the same as the values reported for pure materials. This shows the feasibility of photoacoustic technique for the thermal characterization of ceramic tapes.Organic dyes find applications as holographic recording medium and as active media for laser operations. Knowledge of the photochemical stability of the material is essential if it has to be used tor any of these applications. Mixing one dye with another can change the properties of the resulting system. Through careful mixing of the dyes in appropriate proportions and incorporating them in polymer matrices, media of required stability can be prepared. Investigations are carried out on Rhodamine 6GRhodamine B mixture doped PMMA samples. Addition of RhB in small amounts is found to stabilize Rh6G against photodegradation and addition of Rh6G into RhB increases the photosensitivity of the latter. The PA technique has been successfully employed for the monitoring of dye mixture doped PMMA sample. The same technique has been used for the monitoring of photodegradation ofa laser dye, cresyl violet doped polyvinyl alcohol also.Another important application of photoacoustic technique is in nondestructive evaluation of layered samples. Depth profiling capability of PA technique has been used for the non-destructive testing of multilayer dielectric films, which are highly reflecting in the wavelength range selected for investigations. Eventhough calculation of thickness of the film is not possible, number of layers present in the system can be found out using PA technique. The phase plot has clear step like discontinuities, the number of which coincides with the number of layers present in the multilayer stack. This shows the sensitivity of PA signal phase to boundaries in a layered structure. This aspect of PA signal can be utilized in non-destructive depth profiling of reflecting samples and for the identification of defects in layered structures.

Functionalized Silicon Polymers: Novel Materials for Catalysis

Dept.of Applied Chemistry,Cochin University of Science and Technolgy

Electrical switching studies on the thin films of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon

This thesis Entitled Electrical switching studies on the thin flims of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon.A general introduction to the switching and allied phenomena is presented. Subsequently, developments of switching in thin films are described. The Mott transition is qualitatively presented. The working of a switching transitor is outlined and compared to the switching observed in thin films. Characteristic parameters of switching such as threshold voltage, time response to a, voltage pulse, and delay time are described. The various switching configurations commonly used are discussed. The mechanisms used to explain the switching behaviour like thermal, electrothermal and purely electronic are reviewed. Finally the scope, feasibility and the importance of polymer thin films in switching are highlighted.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.