Young’s modulus of silicon nitride used in scanning force microscope cantilevers

The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness

Microwave Dielectric Resonator Based on Ba[(Bi0.2 D3+0.3)Nb0.5]O3(D3+=Y,Pr,Sm,Gd,Dy,Er)

Dielectric resonator ceramics with composition formula Ba[(D3+0.3 Bi0.2)Nb0.5]O3,where D3+=Y,Pr,Sm,Gd,Dy and Er,were prepared by the conventional ceramic preparation route

Preparation, Characterization, and Microwave Properties of RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) Dielectric Ceramics

Microwave ceramic dielectric resonators (DRs) based on RETiNbO6 (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Y, and Yb) have been prepared using the conventional solid -state ceramic route. The DR samples are characterized using XRD and SEM methods. The microwave dielectric properties are measured using resonant methods and a net work analyzer . The ceramics based on Ce, Pr, Nd, and Sin have dielectric constants in the range 32-54 and positive coefficient of thermal variation of resonant frequency (r,). The ceramics based on Gd, Tb, Dy, Y. and Yb have dielectric constants in the range 19-22 and negative Tf

Synthesis,Characterization and Properties of [REI_xREX]TiNb06 Dielectric Ceramics

Dielectric ceramics based on solid solution phases of [RE1_x= REr]TiNb06, where REI_s = Nd, Pr, Sm and RE' = Dy, Gd and Y, were prepared by the conventional solid-state ceramic route for values of x. The ceramic samples are characterized by X-ray diffraction and microwave methods. Ceramics based on RE (Pr, Nd and Sm) belonging to aeschynite group shows positive value of Tf and those based on RE (Gd, Dy and Y) belonging to euxenite group show negative value of r f. The solid solution phases between the aeschynite and the euxenite group shows intermediate dielectric constant and r f values. The results indicate the possibility of tailoring the dielectric properties by varying the composition of the solid solution phases. The range of solid solubility of euxenite in aeschenite and aeschenite in euxenite are different for different rare earth ions

Microwave Dielectric Properties of RETiTaO6 (RE = La, Ce,Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) Ceramics

Microwave dielectric ceramics based on RETiTaO6 (RE = La, Cc, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) were prepared using a conventional solid-state ceramic route. The structure and microstructure of the samples were analyzed using x-ray diffraction and scanning electron microscopy techniques. The sintered samples were characterized in the microwave frequency region. The ceramics based on Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy, which crystallize in orthorhombic aeschynite structure, had a relatively high dielectric constant and positive T f while those based on Ho, Er, and Yb, with orthorhombic euxenite structure, had a low dielectric constant and negative Tf. The RETiTaO6 ceramics had a high-quality factor. The dielectric constant and unit cell volume of the ceramics increased with an increase in ionic radius of the rare-earth ions, but density decreased with it. The value of Tf increased with an increase in RE ionic radii, and a change in the sign of Tf occurred when the ionic radius was between 0.90 and 0.92 A. The results indicated that the boundary of the aeschynite to euxenite morphotropic phase change lay between DyTiTaO6 and HoTiTaO6. Low-loss ceramics like ErTiTaO6 (Er = 20.6, Qxf = 85,500), EuTiTaO6 (Er = 41.3, Qxf = 59,500), and YTiTaO6 (Er = 22.1, Q„xf = 51,400) are potential candidates for dielectric resonator applications

Tailoring the Microwave Dielectric Properties of GdTiNb 1 _-xTa,O6 and Sm 1 _X Y,TiTa06 Ceramics

Microwave dielectric ceramics based on GdTiNb,-,.Ta,O6 and Sml _.,Y,TiTa06 have been prepared by conventional solid state method . The GdTiTaO6 and SmTiTaO6 have aeschenite structure with positive rr and GdTiNbO6 and YTiTaO6 have euxenite structure with negative rr. The rr of the ceramics has been tuned by preparing solid solution phases between the aeschynites and euxenites for a possible zero rr material . It is observed that GdTiNbt_YTa.,O6 undergoes a phase transition from aeschynite to euxenite when x=0.75 and in Sml-,YxTiTa06 for x= 0.73. The microwave dielectric properties change abruptly near the transition region . The rr value approaches zero near the phase transition region while the samples have poor sinterability and poor quality factor . The unloaded quality factor, dielectric constant and the sign of rr of the solid solution phases are found to depend on the average ionic radius of the rare earth ion in RE ,-5RE',TiTaO6. The boundary of the euxenite-aeschynite phase transition occurs at an average ( RE) ionic radius of 0.915 A in Sm,_, Y,.TiTaO6 solid solution phases

Microwave Dielectric Properties of Ba(Mg1/3Ta(2-2x)/3Wx/3Tix/3) 03 Ceramics

microwave dielectric properties of ceramics based on Ba(Mgv3Ta(2-2x)t3W,t3Tixt3)O3 is investigated as a function of x. The 15 densification as well as dielectric properties deteriorate with increase in the substitution levels of (Ti 1,3W113)333 + at (Ta213)3.33+ site 16 in Ba(Mg113Ta213)03. The rt is approaching zero between x = 0.1 and 0.15 in Ba(Mg it3Ta(2-2,,.)t3W,it3Ti,Tt3)O3 where quality factor is 17 reasonably good (Qu x f = 80,000-90,000 GHz). The Ba(Mg1,3Ta(2_,013W,13Ti,,13)03 with x = 1.0 has e, = 15.4, rf= -25.1 ppm/ 18 "C, Q„ x f = 35,400 GHz

Preparation, Characterization and Microwave Dielectric Properties of Ba (B1/2Nb1/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb and In] Ceramics

Microwave dielectric resonators (DRs) based on Ba(B1,2Nbi/2)03 [B' = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In] complex perovskites have been prepared by conventional solid state ceramic route. The dielectric properties (relative permittivity, Er; quality factor, Q; and resonant frequency, rr) of the ceramics have been measured in the frequency range 4-6 GHz using resonance methods. The resonators have relatively high dielectric constant in the range 36-45, high quality factor and small temperature variation of resonant frequency. The dielectric properties are found to depend on the tolerance factor (t), ionic radius (r), and lattice parameter (ap)

Thermal transport properties of selected ferroelectrics, mixed valance perovskites and dielectric ceramics using photopyroelectric technique

Photothermal spectroscopy is a group of high sensitivity methods used to measure optical absorption and thermal characteristics of a sample.The basis of photothermal spectroscopy is a photo-induced change in the thermal state of the sample.Light energy absorbed and not lost by subsequent emission results in sample heating.This heating results in a temperature change as well as changes in thermodynamic parameters of the sample which are related to temperature.Measurements of the temperature,pressure,or density changes that occur due to optical absorption are ultimately the basis for the photothermal spectroscopic methods.This is a more direct measure of optical absorption than optical transmission based spectroscopies.Sample heating is a direct consequence of optical absorption and so photothermal spectroscopy signals are directly dependent on light absorption.Scattering and reflection losses do not produce photothermal signals.Subsequently,photothermal spectroscopy more accurately measures optical absorption in scattering solutions,in solids,and at interfaces.This aspect makes it particularly attractive for application to surface and solid absorption studies,and studies in scattering media.

Low k thin films based on rf plasma-polymerized aniline

Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.

Structural, topographical and magnetic evolution of RF-sputtered Fe-Ni alloy based thin films with thermal annealing

Metglas 2826 MB having a nominal composition of Fe40Ni38Mo4B18 is an excellent soft magnetic material and finds application in sensors and memory heads. However, the thin-film forms of Fe40Ni38Mo4B18 are seldom studied, although they are important in micro-electro-mechanical systems/nano-electromechanical systems devices. The stoichiometry of the film plays a vital role in determining the structural and magnetic properties of Fe40Ni38Mo4B18 thin films: retaining the composition in thin films is a challenge. Thin films of 52 nm thickness were fabricated by RF sputtering technique on silicon substrate from a target of nominal composition of Fe40Ni38Mo4B18. The films were annealed at temperatures of 400 °C and 600 °C. The micro-structural studies of films using glancing x-ray diffractometer (GXRD) and transmission electron microscope (TEM) revealed that pristine films are crystalline with (FeNiMo)23B6 phase. Atomic force microscope (AFM) images were subjected to power spectral density analysis to understand the probable surface evolution mechanism during sputtering and annealing. X-ray photoelectron spectroscopy (XPS) was employed to determine the film composition. The sluggish growth of crystallites with annealing is attributed to the presence of molybdenum in the thin film. The observed changes in magnetic properties were correlated with annealing induced structural, compositional and morphological changes