Growth and Characterisation of Radio Frequency Magnetron Sputttered Indium Tin Oxide Thin Films

The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies.

Characterization of radio frequency plasma using Langmuir probe and optical emission spectroscopy

The radio frequency plasma generated during the sputtering of Indium Tin Oxide target using Argon was analyzed by Langmuir probe and optical-emission spectroscopy. The basic plasma parameters such as electron temperature and ion density were evaluated. These studies were carried out by varying the RF power from 20 to 50 W. A linear increase in ion density and an exponential decrease in electron temperature with rf power were observed. The measured plasma parameters were then correlated with the properties of ITO thin films deposited under similar plasma conditions.

Synthesis, Characterisation and Properties of (Ba1-xSrx) (Nd1/2Nb1/2 ) 03 Ceramics for Application as Dielectric Resonators in Microwave Circuits

The (Ba1-x Srx) (Nd1/2, Nb1/2) O3 ceramics have been prepared by the conventional ceramic route for different values of x. Addition of a small amount of CeO2(1 wt%) as a sintering aid increased the density of the samples. The structure and microstructure of the sintered samples are studied by X-ray diffraction and SEM methods. The dielectric properties of the samples are measured in the microwave frequency region as a function of composition. The dielectric constant decreases as x increases. The coefficient of thermal variation of resonant frequency decreases as the Sr content increases and goes to the negative side. The dielectric properties of (Ba1-x Srx) (Nd1/2, Nb1/2) O3 are in the range suitable for application as dielectric resonators in microwave circuits

Energy Management in Wireless Sensor Networks: A Crosslayer,Channel Adaptive Approach Towards Performance Optimization

The proliferation of wireless sensor networks in a large spectrum of applications had been spurered by the rapid advances in MEMS(micro-electro mechanical systems )based sensor technology coupled with low power,Low cost digital signal processors and radio frequency circuits.A sensor network is composed of thousands of low cost and portable devices bearing large sensing computing and wireless communication capabilities. This large collection of tiny sensors can form a robust data computing and communication distributed system for automated information gathering and distributed sensing.The main attractive feature is that such a sensor network can be deployed in remote areas.Since the sensor node is battery powered,all the sensor nodes should collaborate together to form a fault tolerant network so as toprovide an efficient utilization of precious network resources like wireless channel,memory and battery capacity.The most crucial constraint is the energy consumption which has become the prime challenge for the design of long lived sensor nodes.

Variation in radio refractivity index associated with formation of low - pressure systems

Numerous low - pressure systems form in the Arabian Sea and Bay of Bengal. These low-pressure systems are highly useful in bringing the rainfall over the Indian sub continent. The developments of these systems are accompanied by the reduction in air temperature and an increase in atmospheric humidity. The radio refractivity, which is a function of the atmospheric pressure, temperature and humidity, also changes following the development of these systems. Variation of radio refractive index and its vertical gradient are analysed for many low pressure systems formed over the Arabian Sea and Bay of Bengal. It is found that the atmosphere becomes super refractive associated with the formation of these systems, caused by the increase in humidity and decrease in temperature. The maximum gradient is observed near the surface layers, especially in the lowest 1 km. Super refraction leads to increased radar detection range and extension of radio horizon

Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio

A Faster 2D Technique for the design of Combinational Digital Circuits Using Genetic Algorithm

Combinational digital circuits can be evolved automatically using Genetic Algorithms (GA). Until recently this technique used linear chromosomes and and one dimensional crossover and mutation operators. In this paper, a new method for representing combinational digital circuits as 2 Dimensional (2D) chromosomes and suitable 2D crossover and mutation techniques has been proposed. By using this method, the convergence speed of GA can be increased significantly compared to the conventional methods. Moreover, the 2D representation and crossover operation provides the designer with better visualization of the evolved circuits. In addition to this, a technique to display automatically the evolved circuits has been developed with the help of MATLAB

An Improved Design of Combinational Digital Circuits with Multiplexers using Genetic Algorithm

This paper presents a new approach to the design of combinational digital circuits with multiplexers using Evolutionary techniques. Genetic Algorithm (GA) is used as the optimization tool. Several circuits are synthesized with this method and compared with two design techniques such as standard implementation of logic functions using multiplexers and implementation using Shannon’s decomposition technique using GA. With the proposed method complexity of the circuit and the associated delay can be reduced significantly