Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Temporal and Spatial Behavior of Electron Density and Temperature in a Laser-Produced Plasma from YBa2Cu3O7

Spectroscopic studies of laser -induced plasma from a high-temperature superconducting material, viz., YBa2Cu3O7 (YBCO), have been carried out. Electron temperature and electron density measurements were made from spectral data. The Stark broad ening of emission lines was used to determine the electron density, and the ratio of line in tensities was exploited for the determination of electron temperature. An initial electron temperature of 2.35 eV and electron density of 2.5 3 1017 cm2 3 were observed. The dependence on electron temperature and density on different experimental parameters such as distance from the target, delay time after the in itiation of the plasm a, and laser irradiance is also discussed in detail. Index Headings: Laser -plasma spectroscopy; Plasma diagnostics; Emission spectroscop y; YBa2Cu3O7.

Temporal and spatial evolution of C2 in laser induced plasma from graphite target

Laser ablation of graphite has been carried out using 1.06mm radiation from a Q-switched Nd:YAG laser and the time of flight distribution of molecular C2 present in the resultant plasma is investigated in terms of distance from the target as well as laser fluences employing time resolved spectroscopic technique. At low laser fluences the intensities of the emission lines from C2 exhibit only single peak structure while beyond a threshold laser fluence, emission from C2 shows a twin peak distribution in time. The occurrence of the faster velocity component at higher laser fluences is explained as due to species generated from recombination processes while the delayed peak is attributed to dissociation of higher carbon clusters resulting in the generation of C2 molecule. Analysis of measured data provides a fairly complete picture of the evolution and dynamics of C2 species in the laser induced plasma from graphite.

Characterization of radio frequency plasma using Langmuir probe and optical emission spectroscopy

The radio frequency plasma generated during the sputtering of Indium Tin Oxide target using Argon was analyzed by Langmuir probe and optical-emission spectroscopy. The basic plasma parameters such as electron temperature and ion density were evaluated. These studies were carried out by varying the RF power from 20 to 50 W. A linear increase in ion density and an exponential decrease in electron temperature with rf power were observed. The measured plasma parameters were then correlated with the properties of ITO thin films deposited under similar plasma conditions.

Growth and Characterisation of Radio Frequency Magnetron Sputttered Indium Tin Oxide Thin Films

The increasing interest in the interaction of light with electricity and electronically active materials made the materials and techniques for producing semitransparent electrically conducting films particularly attractive. Transparent conductors have found major applications in a number of electronic and optoelectronic devices including resistors, transparent heating elements, antistatic and electromagnetic shield coatings, transparent electrode for solar cells, antireflection coatings, heat reflecting mirrors in glass windows and many other. Tin doped indium oxide (indium tin oxide or ITO) is one of the most commonly used transparent conducting oxides. At present and likely well into the future this material offers best available performance in terms of conductivity and transmittivity combined with excellent environmental stability, reproducibility and good surface morphology. Although partial transparency, with a reduction in conductivity, can be obtained for very thin metallic films, high transparency and simultaneously high conductivity cannot be attained in intrinsic stoichiometric materials. The only way this can be achieved is by creating electron degeneracy in a wide bandgap (Eg > 3eV or more for visible radiation) material by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a number of other materials like Zinc oxide, Cadmium oxide etc. ITO shows interesting and technologically important combination of properties viz high luminous transmittance, high IR reflectance, good electrical conductivity, excellent substrate adherence and chemical inertness. ITO is a key part of solar cells, window coatings, energy efficient buildings, and flat panel displays. In solar cells, ITO can be the transparent, conducting top layer that lets light into the cell to shine the junction and lets electricity flow out. Improving the ITO layer can help improve the solar cell efficiency. A transparent ii conducting oxide is a material with high transparency in a derived part of the spectrum and high electrical conductivity. Beyond these key properties of transparent conducting oxides (TCOs), ITO has a number of other key characteristics. The structure of ITO can be amorphous, crystalline, or mixed, depending on the deposition temperature and atmosphere. The electro-optical properties are a function of the crystallinity of the material. In general, ITO deposited at room temperature is amorphous, and ITO deposited at higher temperatures is crystalline. Depositing at high temperatures is more expensive than at room temperature, and this method may not be compatible with the underlying devices. The main objective of this thesis work is to optimise the growth conditions of Indium tin oxide thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The films are also deposited on to flexible substrates by employing bias sputtering technique. The films thus grown were characterised using different tools. A powder x-ray diffractometer was used to analyse the crystalline nature of the films. The energy dispersive x-ray analysis (EDX) and scanning electron microscopy (SEM) were used for evaluating the composition and morphology of the films. Optical properties were investigated using the UVVIS- NIR spectrophotometer by recording the transmission/absorption spectra. The electrical properties were studied using vander Pauw four probe technique. The plasma generated during the sputtering of the ITO target was analysed using Langmuir probe and optical emission spectral studies.

Studies on Laser Induced and RF Sputtered Plasma using Optical Emission Spectroscopy and Langmuir Probe

The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.

Effect of Substrate Temperature on the Structural and Luminescent Characteristics of RF-Magnetron-Sputtered ZnGa2O4:Dy3+ Thin Films

ZnGa2O4:Dy3+ phosphor thin films were deposited on quartz substrates by radio frequency rf magnetron sputtering and the effect of substrate temperature on its structural and luminescent properties was investigated. Polycrystalline film could be deposited even at room temperature. The crystalline behavior, Zn/Ga ratio, and surface morphology of the films were found to be highly sensitive to substrate temperature. Under UV illumination, the as-deposited films at and above 300°C gave white luminescence even without any postdeposition treatments. The photoluminescent PL emission can be attributed to the combined effect of multicolor emissions from the single luminescence center Dy3+ via host-sensitization. Maximum PL emission intensity was observed for the film deposited at 600°C, and the CIE chromaticity coordinates of the emission were determined to be x,y = 0.34, 0.31 .

Optical emission spectroscopic studies on laser ablated zinc oxide plasma

Optical emission spectroscopic studies were carried out on the plasma produced by ablation of zinc oxide target using the third harmonic 355 nm of Q-switched Nd:YAG laser, in vacuum and at three different ambient gas oxygen pressures. The spatial variations of electron density Ne and electron temperature Te were studied up to a distance of 20 mm from the target surface. The kinematics of the emitted particles and the expansion of the plume edge are discussed. The optimum conditions favorable for the formation of high quality zinc oxide thin films are thereby suggested.

Comparison of Electromagnetic Band Gap and Split-Ring Resonator Microstrip Lines as Stop Band Structures

In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG

Design and Analysis of Microstrip Lines with EBG-Backed Ground Planes of Different Geometrical Shapes

Propagation of electromagnetic waves through a microstrip line with 2D electromagnetic baud gap (EBG) structures of different geometrical shapes in the ground plane is investigated in this paper. Using transmission-line theory, the design equations for EBG structures are calculated. The measured, numerical. and simulated results are in gone) agreement

Optical Emission Diagnostics Of Laser Produced Plasma From Graphite And Yba2cu3o7

This thesis is entitled “OPTICAL EMISSION DIAGNOSTICS OF LASER PRODUCED PLASMA FROM GRAPHITE AND YBa2Cu3O7. The work presented in this thesis covers the experimental results on the plasma produced with moderately high power laser with irradiance range in between 10 GW cm 2 to 100 GW cm -2. The characterization of laser produced plasma from solid targets viz. graphite and high temperature superconducting material like YBa2Cu3O7 have been carried out. The fundamental frequency from a Q - switched Nd: YAG laser with 9 ns pulse duration is used for the present studies. Various optical emission emission diagnostic techniques were employed for the the characterization of the LPP which include emission spectroscopy, time resolved studies, line broadening method etc. In order to understand the physical nature of the LPP like recombination, collisional excitation and the laser interaction with plasma, the time resolved studies offer the most logical approach