Optical emission studies of C2 species in laser-produced plasma from carbon

Optical emission studies of C2 molecules in plasma obtained by Nd:YAG laser ablation of graphite in a helium atmosphere are reported for irradiances in the range (1–9:2/ x 1010 W cm−2. The characteristics of the spectral emission intensity from the C2 (Swan band) species have been investigated as functions of the distance from the target, ambient pressure and laser irradiance. Estimates of vibrational temperatures of C2 species under various irradiance conditions are made. Results of measurements performed under different ambient helium gas pressures are also discussed.

Optical emission studies of C2 species in laser-produced plasma from carbon

Optical emission studies of C2 molecules in plasma obtained by Nd:YAG laser ablation of graphite in a helium atmosphere are reported for irradiances in the range (1–9:2/ x 1010 W cm−2. The characteristics of the spectral emission intensity from the C2 (Swan band) species have been investigated as functions of the distance from the target, ambient pressure and laser irradiance. Estimates of vibrational temperatures of C2 species under various irradiance conditions are made. Results of measurements performed under different ambient helium gas pressures are also discussed.

Time evolution of Nd:YAG laser-induced plasma from GdBa2Cu3O7 high-Tc superconductor

In order to characterise the laser ablation process from high-Tc superconductors, the time evolution of plasma produced by a Q-switching Nd:YAG laser from a GdBa2Cu3O7 superconducting sample has been studied using spectroscopic and ion-probe techniques. It has been observed that there is a fairly large delay for the onset of the emission from oxide species in comparison with those from atoms and ions of the constituent elements present in the plasma. Faster decay occurs for emission from oxides and ions compared with that from neutral atoms. These observations support the view that oxides are not directly produced from the target, but are formed by the recombination process while the plasma cools down. Plasma parameters such as temperature and velocity are also evaluated.

Spatial and temporal analysis of laser induced plasma from a polymer sample

Spatial and temporal analyses of the spectra of the laser induced plasma from a polytetrafluroethylene (PTFE) target obtained with the 1.06 mu m radiation from a Q-switched Nd:YAG laser have been carried out. The spatially resolved spectra of the plasma emission show that molecular bands of C2 (Swan bands) and CN are very intense in the outer regions of the plasma, whereas higher ionized states of carbon are predominant in the core region of the plasma emission. The vibrational temperature and population distribution in the different vibrational levels have been studied as a function of laser energy. From the time resolved studies, it has been observed that there exist fairly large time delays for the onset of emission from all the species in the outer region of the plasma. The molecular bands in each region exhibit much larger time delays in comparison to the ionic lines in the plasma.

Characterization of low dielectric constant polyaniline thin film synthesized by ac plasma polymerization technique

Polyaniline thin films were prepared by ac plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity of these films were investigated in the frequency range from 100 Hz to 1MHz and in the temperature range from 300 to 373 K. Capacitance and dielectric loss decreased with frequency and increased with temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity σ(ω) was found to vary as ωs with the index s 1. Annealing of polyaniline thin films in high vacuum at 373K for 1 h was found to reduce the dielectric loss. FTIR studies reveal that the aromatic ring is retained in the polyaniline thin films, which enhances the thermal stability of the polymer films

Photoluminescence studies on RF plasma-polymerized thin films

Conjugated polymers in the form of thin films play an important role in the field of materials science due to their interesting properties. Polymer thin films find extensive applications in the fabrication of devices, such as light emitting devices, rechargeable batteries, super capacitors, and are used as intermetallic dielectrics and EMI shieldings. Polymer thin films prepared by plasma-polymerization are highly cross-linked, pinhole free, and their permittivity lie in the ultra low k-regime. Electronic and photonic applications of plasma-polymerized thin films attracted the attention of various researchers. Modification of polymer thin films by swift heavy ions is well established and ion irradiation of polymers can induce irreversible changes in their structural, electrical, and optical properties. Polyaniline and polyfurfural thin films prepared by RF plasmapolymerization were irradiated with 92MeV silicon ions for various fluences of 1×1011 ions cm−2, 1×1012 ions cm−2, and 1×1013 ions cm−2. FTIR have been recorded on the pristine and silicon ion irradiated polymer thin films for structural evaluation. Photoluminescence (PL) spectra were recorded for RF plasma-polymerized thin film samples before and after irradiation. In this paper the effect of swift heavy ions on the structural and photoluminescence spectra of plasma-polymerized thin films are investigated.

Determination of charge carrier transport in radio frequency plasma polymerized aniline thin films

The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio

Fabrication of a quantum well heterostructure based on plasma polymerized aniline and its characterization using STM/STS

Two-dimensional electronic systems play a crucial role in modern electronics and offer a multitude of opportunities to study the fundamental phenomena at low dimensional physics. A quantum well heterostructure based on polyaniline (P) and iodine doped polyaniline (I) thin films were fabricated using radio frequency plasma polymerization on indium tin oxide coated glass plate. Scanning probe microscopy and scanning electron microscopy studies were employed to study the morphology and roughness of the polymer thin films. Local electronic density of states (LDOS) of the P–I–P heterostructures is probed using scanning tunnelling spectroscopy (STS). A step like LDOS is observed in the P–I–P heterostructure and is attributed to the quantum well confinement of electrons in the polymer heterostructure.