Electron-Phonon Interaction Within the Framework of the Fluctuating Valence of Copper Atoms — a Theoretical Model for High Temperature Superconductivity

Electron-phonon interaction is considered within the framework of the fluctuating valence of Cu atoms. Anderson's lattice Hamiltonian is suitably modified to take this into account. Using Green's function technique tbe possible quasiparticle excitations' are determined. The quantity 2delta k(O)/ kB Tc is calculated for Tc= 40 K. The calculated values are in good agreement with the experimental results.

Ultrasonic measurement of the elastic constants of selected nonlinear optical /semiorganic crystals with orthorhombic symmetry

Ultrasonic is a good tool to investigate the elastic properties of crystals. It enables one to determine all the elastic constants, Poisson’s ratios, volume compressibility and bulk modulus of crystals from velocity measurements. It also enables one to demonstrate the anisotropy of elastic properties by plotting sections of the surfaces of phase velocity, slowness, group velocity, Young’s modulus and linear compressibility along the a-b, b-c and a-c planes. They also help one to understand more about phonon amplification and help to interpret various phenomena associated with ultrasonic wave propagation, thermal conductivity, phonon transport etc. Study of nonlinear optical crystals is very important from an application point of view. Hundreds of new NLO materials are synthesized to meet the requirements for various applications. Inorganic, organic and organometallic or semiorganic classes of compounds have been studied for several reasons. Semiorganic compounds have some advantages over their inorganic and inorganic counterparts with regard to their mechanical properties. High damage resistance, high melting point, good transparency and non-hygroscopy are some of the basic requirements for a material to be suitable for device fabrication. New NLO materials are being synthesized and investigation of the mechanical and elastic properties of these crystals is very important to test the suitability of these materials for technological applications

Laser-induced thermal characterization of nano Ag metal dispersed ceramic alumina matrix

In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature.

Laser-induced thermal characterization of nano Ag metal dispersed ceramic alumina matrix

In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature

Laser-induced thermal characterization of nano Ag metal dispersed ceramic alumina matrix

In this paper, we report the measurements of thermal diffusivity of nano Ag metal dispersed ceramic alumina matrix sintered at different temperatures using laser induced non-destructive photoacoustic technique. Measurements of thermal diffusivity also have been carried out on specimens with various concentration of nano metal. Analysis of the data is done on the basis of one-dimensional model of Rosencwaig and Gersho. The present measurements on the thermal diffusivity of nano metal dispersed ceramic alumina shows that porosity has a great influence on the heat transport and the thermal diffusivity value. The present analysis also shows that the inclusion of nano metal into ceramic matrix increases its interconnectivity and hence the thermal diffusivity value. The present study on the samples sintered at different temperature shows that the porosity of the ceramics varies considerably with the change in sintering temperature. The results are interpreted in terms of phonon assisted heat transfer mechanism and the exclusion of pores with the increase in sintering temperature

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal transport across incommensurate phases in potassium selenate: photo-pyroelectric and calorimetric measurements

The thermal transport properties—thermal diffusivity, thermal conductivity and specific heat capacity—of potassium selenate crystal have been measured through the successive phase transitions, following the photo-pyroelectric thermal wave technique. The variation of thermal conductivity with temperature through the incommensurate (IC) phase of this crystal is measured. The enhancement in thermal conductivity in the IC phase is explained in terms of heat conduction by phase modes, and the maxima in thermal conductivity during transitions is due to enhancement in the phonon mean free path and the corresponding reduction in phonon scattering. The anisotropy in thermal conductivity and its variation with temperature are reported. The variation of the specific heat with temperature through the high temperature structural transition at 745 K is measured, following the differential scanning calorimetric method. By combining the results of photo-pyroelectric thermal wave methods and differential scanning calorimetry, the variation of the specific heat capacity with temperature through all the four phases of K2SeO4 is reported. The results are discussed in terms of phonon mode softening during transitions and phonon scattering by phase modes in the IC phase.

Photoacoustic investigation of doped InP using open cell configuration

An open cell photoacoustic (PA) configuration has been employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data have been evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a reduced value for thermal diffusivity in comparison with intrinsic InP. We also observed that, while the phase of the PA signal varies linearly with the square root of chopping frequency for doped samples, the intrinsic material does not exhibit such behaviour in the experimental frequency range. These results have been interpreted in terms of the heat generation and phonon assisted heat diffusion mechanisms in semiconductors.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.