3 resultados para ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING
em Cochin University of Science
Resumo:
The modern telecommunication industry demands higher capacity networks with high data rate. Orthogonal frequency division multiplexing (OFDM) is a promising technique for high data rate wireless communications at reasonable complexity in wireless channels. OFDM has been adopted for many types of wireless systems like wireless local area networks such as IEEE 802.11a, and digital audio/video broadcasting (DAB/DVB). The proposed research focuses on a concatenated coding scheme that improve the performance of OFDM based wireless communications. It uses a Redundant Residue Number System (RRNS) code as the outer code and a convolutional code as the inner code. The bit error rate (BER) performances of the proposed system under different channel conditions are investigated. These include the effect of additive white Gaussian noise (AWGN), multipath delay spread, peak power clipping and frame start synchronization error. The simulation results show that the proposed RRNS-Convolutional concatenated coding (RCCC) scheme provides significant improvement in the system performance by exploiting the inherent properties of RRNS.
Resumo:
The thesis is the outcome of the experimental and theoretical investigations carried out on a novel slotted microstrip antenna.The antenna excites two resonance frequencies and provides orthogonal polarization. The radiation characteristics of the antenna are studied in detail. The antenna design is optimized using IE3D electromagnetic simulation tool. The frequency-Difference Time-Domain (FDTD) method is employed for the analysis of the antenna.The antenna can be used for personal and satellite communication applications.
Resumo:
The main challenges in the deposition of cathode materials in thin film form are the reproduction of stoichiometry close to the bulk material and attaining higher rates of deposition and excellent crystallinity at comparatively lower annealing temperatures. There are several methods available to develop stoichiometric thin film cathode materials including pulsed laser deposition; plasma enhanced chemical vapor deposition, electron beam evaporation, electrostatic spray deposition and RF magnetron sputtering. Among them the most versatile method is the sputtering technique, owing to its suitability for micro-fabricating the thin film batteries directly on chips in any shape or size, and on flexible substrates, with good capacity and cycle life. The main drawback of the conventional sputtering technique using RF frequency of 13.56MHz is its lower rate of deposition, compared to other deposition techniques A typical cathode layer for a thin film battery requires a thickness around one micron. To deposit such thick layers using convention RF sputtering, longer time of deposition is required, since the deposition rate is very low, which is typically 10-20 Å/min. This makes the conventional RF sputtering technique a less viable option for mass production in an economical way. There exists a host of theoretical and experimental evidences and results that higher excitation frequency can be efficiently used to deposit good quality films at higher deposition rates with glow discharge plasma. The effect of frequencies higher than the conventional one (13.56MHz) on the RF magnetron sputtering process has not been subjected to detailed investigations. Attempts have been made in the present work, to sputter deposit spinel oxide cathode films, using high frequency RF excitation source. Most importantly, the major challenge faced by the thin film battery based on the LiMn2O4 cathode material is the poor capacity retention during charge discharge cycling. The major causes for the capacity fading reported in LiMn2O4cathode materials are due to, Jahn-Teller distortion, Mn2+ dissolution into the electrolyte and oxygen loss in cathode material during cycling. The work discussed in this thesis is an attempt on overcoming the above said challenges and developing a high capacity thin film cathode material.