Optimization of Two Stage Process for the Growth of In2S3 , CuInSe2 and CuIn (Sel-xSx)2Thin Films for Solar Cell Application

Two stage processes consisting of precursor preparation by thermal evaporation followed by chalcogenisation in the required atmosphere is found to be a feasible technique for the PV materials such as n-Beta In2S3, p-CulnSe2, p-CulnS2 and p-CuIn(Sel_xSx)2. The growth parameters such as chalcogenisation temperature and duration of chalcogenisation etc have been optimised in the present study.Single phase Beta-In2S3 thin films can be obtained by sulfurising the indium films above 300°C for 45 minutes. Low sulfurisation temperatures required prolonged annealing after the sulfurisation to obtain single phase Beta-1n2S3, which resulted in high material loss. The maximum band gap of 2.58 eV was obtained for the nearly stoichiometric Beta-In2S3 film which was sulfurised at 350°C. This wider band gap, n type Beta-In2S3 can be used as an alternative to toxic CdS as window layer in photovoltaics .The systematic study on the structural optical and electrical properties of CuInSe2 films by varying the process parameters such as the duration of selenization and the selenization temperature led to the conclusion that for the growth of single-phase CuInSe2, the optimum selenization temperature is 350°C and duration is 3 hours. The presence of some binary phases in films for shorter selenization period and lower selenization temperature may be due to the incomplete reaction and indium loss. Optical band gap energy of 1.05 eV obtained for the films under the optimum condition.In order to obtain a closer match to the solar spectrum it is desirable to increase the band gap of the CulnSe2 by a few meV . Further research works were carried out to produce graded band gap CuIn(Se,S)2 absorber films by incorporation of sulfur into CuInSe2. It was observed that when the CulnSe2 prepared by two stage process were post annealed in sulfur atmosphere, the sulfur may be occupying the interstitial positions or forming a CuInS2 phase along with CuInSe2 phase. The sulfur treatment during the selenization process OfCu11 ln9 precursors resulted in Culn (Se,S)2 thin films. A band gap of 1.38 eV was obtained for the CuIn(Se,S)2.The optimised thin films n-beta 1n2S3, p-CulnSe2 and p-Culn(Sel-xSx)2 can be used for fabrication of polycrystalline solar cells.

Influence of compounding and process variables on quality of condams made from natural rubber latex

Condoms are widely accepted as a contraceptive for family planning and population control. It is also accepted as the most effective barrier against sexually transmitted diseases, especially AIDS, the incurable disease. But presence of pinholes and low film strength of condoms make it unsuitable for the purpose. Quality improvement of condoms by reducing the pinhole formation and increasing the film strength is thus an essential requirement for population control as well as for preventing the spread of sexually transmitted diseases. Strict implementation of WHO specification of condoms further increases the rejection percentage. This causes higher rejection loss to condom manufacturers because the defects could be identified only at the final stage of processing. If the influence of various factors which cause these defects is known, manufacturers can take remedial measures to reduce the defectives so that rejection loss can be decreased and quality of condoms increased. In the present study, it was proposed to conduct experiments to improve the quality of condoms by reducing the pinhole rejection percentage and increasing the tensile properties, burst volume, and burst pressure. Ageing property improvement also was an important target among other parameters. Until a cure for AIDS is found, a high quality latex condom is the only effective device in the prevention of the spread of HIV, AIDS and STD's. Hence it is all the more necessary to have high quality condoms.