Synthesis, Characterization and Properties of Ca5A2TiO12 (A=Nb, Ta) Ceramic Dielectric Materials for Applications in Microwave Telecommunication Systems

Microwave ceramic dielectric materials Ca5Nb2TiO12 and Ca5Ta2TiO12 have been prepared by a conventional solid-state ceramic process. The structure was studied by X-ray diffraction and the dielectric properties were characterized at microwave frequencies. The ceramics posses a relatively high dielectric constant, very low dielectric loss (Q5 x f > 30000GHz) and small temperature variation of resonant frequency. These materials are potential candidates for dielectric resonator applications in microwave integrated circuits. [DOI: 10. 1 143/JJAP.41.3834]

Dielectric Properties of Ba5Nb4O15 Ceramic

Ceramic dielectrics with high dielectric constant in the microwave frequency range are used as filters, oscillators [I], etc. in microwave integrated circuits (MICs) particularly in modern communication systems like cellular telephones and satellite communications. Such ceramics, known as 'dielectric resonators (DRs),donot only offer miniaturisation and reduce the weight of the microwave components. but also improve the efficiency of MICs

Development and Analysis of a Compact Dual-Band Coplanar Antenna

The coplanar wave guide is an attractive device in microwave integrated circuits due to its uniplanar nature, ease of fabrication and low production cost. Several attempts are already done to explore the radiating modes in coplanar wave guide transmission lines. Usually coplanar wave guides are excited by an SMA connector with its centre conductor connected to the exact middle of the centre strip and the outer ground conductor to the two ground strips. The mode excited on it is purely a bound mode. The E-field distribution in the two slots are out of phase and there for cancels at the far field. This thesis addresses an attempt to excite an in phase E-field distribution in the two slots of the co planar wave guide by employing a feed asymmetry, in order to get radiation from the two large slot discontinuities of the coplanar waveguide. The omni directional distribution of the radiating energy can be achieved by widening the centre strip.The first part of the thesis deals with the investigations on the resonance phenomena of conventional coplanar waveguides at higher frequency bands. Then an offset fed open circuited coplanar waveguide supporting resonance/radiation phenomena is analyzed. Finally, a novel compact co planar antenna geometry with dual band characteristics, suitable for mobile terminal applications is designed and characterized using the inferences from the above study.

Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics

The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm and 14 nm technology nodes. In 2007 the 45 nm technology came with the revolutionary high- /metal gate structure. 22 nm technology utilizes fully depleted tri-gate transistor structure. The 14 nm technology is a continuation of the 22 nm technology. Intel is using second generation tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by 7 nm. Recently, IBM has announced successful production of 7 nm node test chips. This is the fashion how nanoelectronics industry is proceeding with its scaling trend. For the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the atomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as a futuristic manufacturing approach that deposits materials and lms in exact places. In addition to the nano/microelectronics industry, ALD is also widening its application areas and acceptance. The usage of ALD equipments in industry exhibits a diversi cation trend. With this trend, large area, batch processing, particle ALD and plasma enhanced like ALD equipments are becoming prominent in industrial applications. In this work, the development of an atomic layer deposition tool with microwave plasma capability is described, which is a ordable even for lightly funded research labs.

Synthesis, Characterisation and Properties of (Ba1-xSrx) (Nd1/2Nb1/2 ) 03 Ceramics for Application as Dielectric Resonators in Microwave Circuits

The (Ba1-x Srx) (Nd1/2, Nb1/2) O3 ceramics have been prepared by the conventional ceramic route for different values of x. Addition of a small amount of CeO2(1 wt%) as a sintering aid increased the density of the samples. The structure and microstructure of the sintered samples are studied by X-ray diffraction and SEM methods. The dielectric properties of the samples are measured in the microwave frequency region as a function of composition. The dielectric constant decreases as x increases. The coefficient of thermal variation of resonant frequency decreases as the Sr content increases and goes to the negative side. The dielectric properties of (Ba1-x Srx) (Nd1/2, Nb1/2) O3 are in the range suitable for application as dielectric resonators in microwave circuits

Compact amplifier integrated microstrip antenna

compact microstrip antenna integrated with an amplifier having an area reduction of 70%, compared to the standard circular microstrip patch antenna, is presented. The antenna also provides an enhanced gain of 10-dB more than its passive counter part. The measured 2:1 VSWR band width is -4% at 790 MHz, which is 2.5 times larger than that of the passive microstrip antenna

Integrated internal PIFA for UMTS operation of clamshell mobile phones

novel design of at internal PIFA integrated with an RF-shielding metal case for application in a clamshell or fielder-tvpe mobile phone is presented. The integrated PIFA has a bent and tapered radiating arm in order to easily fit in the casing of the clamshell mobile phone as an internal antenna. The integrated PlEA can also provide a wide operating bandwidth fir UM7S (1920-2170 MHz) operation. In addition, for the clamshell mobile phone in either the talk or standby condition, only a small effect on the operating bandwidth of the integrated PIFA is obtained. The experimental results of the proposed design are presented