Synthesis, Characterization and Properties of Ca5A2TiO12 (A=Nb, Ta) Ceramic Dielectric Materials for Applications in Microwave Telecommunication Systems

Microwave ceramic dielectric materials Ca5Nb2TiO12 and Ca5Ta2TiO12 have been prepared by a conventional solid-state ceramic process. The structure was studied by X-ray diffraction and the dielectric properties were characterized at microwave frequencies. The ceramics posses a relatively high dielectric constant, very low dielectric loss (Q5 x f > 30000GHz) and small temperature variation of resonant frequency. These materials are potential candidates for dielectric resonator applications in microwave integrated circuits. [DOI: 10. 1 143/JJAP.41.3834]

Dielectric Properties of Ba5Nb4O15 Ceramic

Ceramic dielectrics with high dielectric constant in the microwave frequency range are used as filters, oscillators [I], etc. in microwave integrated circuits (MICs) particularly in modern communication systems like cellular telephones and satellite communications. Such ceramics, known as 'dielectric resonators (DRs),donot only offer miniaturisation and reduce the weight of the microwave components. but also improve the efficiency of MICs

Development and Analysis of a Compact Dual-Band Coplanar Antenna

The coplanar wave guide is an attractive device in microwave integrated circuits due to its uniplanar nature, ease of fabrication and low production cost. Several attempts are already done to explore the radiating modes in coplanar wave guide transmission lines. Usually coplanar wave guides are excited by an SMA connector with its centre conductor connected to the exact middle of the centre strip and the outer ground conductor to the two ground strips. The mode excited on it is purely a bound mode. The E-field distribution in the two slots are out of phase and there for cancels at the far field. This thesis addresses an attempt to excite an in phase E-field distribution in the two slots of the co planar wave guide by employing a feed asymmetry, in order to get radiation from the two large slot discontinuities of the coplanar waveguide. The omni directional distribution of the radiating energy can be achieved by widening the centre strip.The first part of the thesis deals with the investigations on the resonance phenomena of conventional coplanar waveguides at higher frequency bands. Then an offset fed open circuited coplanar waveguide supporting resonance/radiation phenomena is analyzed. Finally, a novel compact co planar antenna geometry with dual band characteristics, suitable for mobile terminal applications is designed and characterized using the inferences from the above study.

An efficient scheme for the evaluation of coding performance of high speed links incorporating joint error behaviour based on Monte Carlo Method

While channel coding is a standard method of improving a system’s energy efficiency in digital communications, its practice does not extend to high-speed links. Increasing demands in network speeds are placing a large burden on the energy efficiency of high-speed links and render the benefit of channel coding for these systems a timely subject. The low error rates of interest and the presence of residual intersymbol interference (ISI) caused by hardware constraints impede the analysis and simulation of coded high-speed links. Focusing on the residual ISI and combined noise as the dominant error mechanisms, this paper analyses error correlation through concepts of error region, channel signature, and correlation distance. This framework provides a deeper insight into joint error behaviours in high-speed links, extends the range of statistical simulation for coded high-speed links, and provides a case against the use of biased Monte Carlo methods in this setting

Low k thin films based on rf plasma-polymerized aniline

Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.

A Comaparison Study of EM and Physical Equivalent Circuit Modeling for MIM CMOS Capacitors

In this Letter a new physical model for metal-insulatormetal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors

Compact amplifier integrated microstrip antenna

compact microstrip antenna integrated with an amplifier having an area reduction of 70%, compared to the standard circular microstrip patch antenna, is presented. The antenna also provides an enhanced gain of 10-dB more than its passive counter part. The measured 2:1 VSWR band width is -4% at 790 MHz, which is 2.5 times larger than that of the passive microstrip antenna

Integrated internal PIFA for UMTS operation of clamshell mobile phones

novel design of at internal PIFA integrated with an RF-shielding metal case for application in a clamshell or fielder-tvpe mobile phone is presented. The integrated PIFA has a bent and tapered radiating arm in order to easily fit in the casing of the clamshell mobile phone as an internal antenna. The integrated PlEA can also provide a wide operating bandwidth fir UM7S (1920-2170 MHz) operation. In addition, for the clamshell mobile phone in either the talk or standby condition, only a small effect on the operating bandwidth of the integrated PIFA is obtained. The experimental results of the proposed design are presented

Enhancement of Microwave Properties of Planar Filters and Antennas using Photonic Bandgap (PBG) Structures

In this thesis, we explore the design, computation, and experimental analysis of photonic crystals, with a special emphasis on structures and devices that make a connection with practically realizable systems. First, we analyze the propenies of photonic-crystal: periodic dielectric structures that have a band gap for propagation. The band gap of periodically loaded air column on a dielectric substrate is computed using Eigen solvers in a plane wave basis. Then this idea is extended to planar filters and antennas at microwave regime. The main objectives covered in this thesis are:• Computation of Band Gap origin in Photonic crystal with the abet of Maxwell's equation and Bloch-Floquet's theorem • Extension of Band Gap to Planar structures at microwave regime • Predict the dielectric constant - synthesized dieletric cmstant of the substrates when loaded with Photonic Band Gap (PBG) structures in a microstrip transmission line • Identify the resonant characteristic of the PBG cell and extract the equivalent circuit based on PBG cell and substrate parameters for microstrip transmission line • Miniaturize PBG as Defected Ground Structures (DGS) and use the property to be implemented in planar filters with microstrip transmission line • Extended the band stop effect of PBG / DGS to coplanar waveguide and asymmetric coplanar waveguide. • Formulate design equations for the PBG / DGS filters • Use these PBG / DGS ground plane as ground plane of microstrip antennas • Analysis of filters and antennas using FDID method

Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics

The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm and 14 nm technology nodes. In 2007 the 45 nm technology came with the revolutionary high- /metal gate structure. 22 nm technology utilizes fully depleted tri-gate transistor structure. The 14 nm technology is a continuation of the 22 nm technology. Intel is using second generation tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by 7 nm. Recently, IBM has announced successful production of 7 nm node test chips. This is the fashion how nanoelectronics industry is proceeding with its scaling trend. For the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the atomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as a futuristic manufacturing approach that deposits materials and lms in exact places. In addition to the nano/microelectronics industry, ALD is also widening its application areas and acceptance. The usage of ALD equipments in industry exhibits a diversi cation trend. With this trend, large area, batch processing, particle ALD and plasma enhanced like ALD equipments are becoming prominent in industrial applications. In this work, the development of an atomic layer deposition tool with microwave plasma capability is described, which is a ordable even for lightly funded research labs.