Effect of Substrate Temperature on the Structural and Luminescent Characteristics of RF-Magnetron-Sputtered ZnGa2O4:Dy3+ Thin Films

ZnGa2O4:Dy3+ phosphor thin films were deposited on quartz substrates by radio frequency rf magnetron sputtering and the effect of substrate temperature on its structural and luminescent properties was investigated. Polycrystalline film could be deposited even at room temperature. The crystalline behavior, Zn/Ga ratio, and surface morphology of the films were found to be highly sensitive to substrate temperature. Under UV illumination, the as-deposited films at and above 300°C gave white luminescence even without any postdeposition treatments. The photoluminescent PL emission can be attributed to the combined effect of multicolor emissions from the single luminescence center Dy3+ via host-sensitization. Maximum PL emission intensity was observed for the film deposited at 600°C, and the CIE chromaticity coordinates of the emission were determined to be x,y = 0.34, 0.31 .

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Laser IInduced Liinear and Nonlliinear Optiicall Studiies on Certaiin Metall Halliides and Tartrate Crystalls ffor Photoniic Applliicatiions

Nonlinear optics is a broad field of research and technology that encompasses subject matter in the field of Physics, Chemistry, and Engineering. It is the branch of Optics that describes the behavior of light in nonlinear media, that is, media in which the dielectric polarization P responds nonlinearly to the electric field E of the light. This nonlinearity is typically only observed at very high light intensities. This area has applications in all optical and electro optical devices used for communication, optical storage and optical computing. Many nonlinear optical effects have proved to be versatile probes for understanding basic and applied problems. Nonlinear optical devices use nonlinear dependence of refractive index or absorption coefficient on the applied field. These nonlinear optical devices are passive devices and are referred to as intelligent or smart materials owing to the fact that the sensing, processing and activating functions required for optical processes are inherent to them which are otherwise separate in dynamic devices.The large interest in nonlinear optical crystalline materials has been motivated by their potential use in the fabrication of all-optical photonic devices. Transparent crystalline materials can exhibit different kinds of optical nonlinearities which are associated with a nonlinear polarization. The choice of the most suitable crystal material for a given application is often far from trivial; it should involve the consideration of many aspects. A high nonlinearity for frequency conversion of ultra-short pulses does not help if the interaction length is strongly limited by a large group velocity mismatch and the low damage threshold limits the applicable optical intensities. Also, it can be highly desirable to use a crystal material which can be critically phasematched at room temperature. Among the different types of nonlinear crystals, metal halides and tartrates have attracted due to their importance in photonics. Metal halides like lead halides have drawn attention because they exhibit interesting features from the stand point of the electron-lattice interaction .These materials are important for their luminescent properties. Tartrate single crystals show many interesting physical properties such as ferroelectric, piezoelectric, dielectric and optical characteristics. They are used for nonlinear optical devices based on their optical transmission characteristics. Among the several tartrate compounds, Strontium tartrate, Calcium tartrate and Cadmium tartrate have received greater attention on account of their ferroelectric, nonlinear optical and spectral characteristics. The present thesis reports the linear and nonlinear aspects of these crystals and their potential applications in the field of photonics.