Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Cashew industry in Kerala problems and potentials

India is the largest producer and processor of cashew in the world. The export value of cashew is about Rupees 2600 crore during 2004-05. Kerala is the main processing and exporting center of cashew. In Kerala most of the cashew processing factories are located in Kollam district. The industry provides livelihood for about 6-7 lakhs of employees and farmers, the cashew industry has national importance. In Kollam district alone there are more than 2.5 lakhs employees directly involved in the industry, which comes about 10 per cent of the population of the district, out of which 95 per cent are women workers. It is a fact that any amount received by a woman worker will be utilized directly for the benefit of the family and hence the link relating to family welfare is quite clear. Even though the Government of Kerala has incorporated the Kerala State Cashew Development Corporation (KSCDC) and Kerala State Cashew Workers Apex Industrial Co—operative Society (CAPEX) to develop the Cashew industry, the cashew industry and ancillary industries did not grow as per the expectation. In this context, an attempt has been made to analyze the problems and potential of the industry so as to make the industry viable and sustainable for the perpetual employment and income generation as well as the overall development of the Kollam district.

Studies on gaussian effective potentials in some models

In classical field theory, the ordinary potential V is an energy density for that state in which the field assumes the value ¢. In quantum field theory, the effective potential is the expectation value of the energy density for which the expectation value of the field is ¢o. As a result, if V has several local minima, it is only the absolute minimum that corresponds to the true ground state of the theory. Perturbation theory remains to this day the main analytical tool in the study of Quantum Field Theory. However, since perturbation theory is unable to uncover the whole rich structure of Quantum Field Theory, it is desirable to have some method which, on one hand, must go beyond both perturbation theory and classical approximation in the points where these fail, and at that time, be sufficiently simple that analytical calculations could be performed in its framework During the last decade a nonperturbative variational method called Gaussian effective potential, has been discussed widely together with several applications. This concept was described as a means of formalizing our intuitive understanding of zero-point fluctuation effects in quantum mechanics in a way that carries over directly to field theory.

The Fishing Industry in Kerala - Problem and Potentials

importance of fishing and other allied industries in the economy was realised only very recently. Consequently only very few studies are available on the subject. Here an attempt is made to survey the available literature on the subject.

Microwave Plasma Assisted ALD Development for the Deposition of Gate Oxides & ALD of High-k Dielectrics

The semiconductor industry's urge towards faster, smaller and cheaper integrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm and 14 nm technology nodes. In 2007 the 45 nm technology came with the revolutionary high- /metal gate structure. 22 nm technology utilizes fully depleted tri-gate transistor structure. The 14 nm technology is a continuation of the 22 nm technology. Intel is using second generation tri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by 7 nm. Recently, IBM has announced successful production of 7 nm node test chips. This is the fashion how nanoelectronics industry is proceeding with its scaling trend. For the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the atomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as a futuristic manufacturing approach that deposits materials and lms in exact places. In addition to the nano/microelectronics industry, ALD is also widening its application areas and acceptance. The usage of ALD equipments in industry exhibits a diversi cation trend. With this trend, large area, batch processing, particle ALD and plasma enhanced like ALD equipments are becoming prominent in industrial applications. In this work, the development of an atomic layer deposition tool with microwave plasma capability is described, which is a ordable even for lightly funded research labs.