Broad-Band Gap Coupled Microstrip Antenna

A microstrip antenna with large bandwidth is developed using a parasitic technique . Compared to the available wide-baud antennas,the proposed antenna structure is very compact and gives a lessdistorted radiation pattern with frequency . An impedance bandwidth,eight times that of a conventional patch antenna of the same size, Isachieved. The concept of coupled microstrip line model Is extended fortheoretical interpretation of the impedance loci

Comparison of Electromagnetic Band Gap and Split-Ring Resonator Microstrip Lines as Stop Band Structures

In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG

Growth and characterization of nanostructured wide band gap semiconductors for optoelectronic applications

Department of Physics, Cochin University of Science and Technology

A low-inductance, long-life, triggered spark gap switch for Blumlein-driven lasers

A low inductance, triggered spark gap switch suitable for a high-current fast discharge system has been developed. The details of the design and fabrication of this pressurized spark gap, which uses only commonly available materials are described. A transverse discharge Blumlein-driven N2 laser incorporating this device gives a peak output power of 700 kW with a FWHM of 3 ns and an efficiency of 0.51%, which is remarkably high for a pulsed nitrogen laser system.

Gap Analysis For Implementing Tqm In Seafood Exporting Firms

Gap analysis is a very useful tool for firms contemplating adoption of a new system. This paper envisages the use of the gap analysis tool as a precursor for Indian seafood exporting firms to adopt total quality management. Total quality management (TQM) is a management philosophy which strives to put quality at the forefront of all its decision-making, thereby satisfying customers. We therefore recommend that firms adopt the TQM system for better alignment of management goals. The gap analysis tool serves as a roadmap for TQM implementation, by showing the management where they actually are and where they want to be. The main gaps were found to be in the areas of usage of SPC tools (66.7%), benchmarking (65.6%), top management commitment (56.25%) and customer focus (48.1%).

Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011, 1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC terminals. This results in extended conjugated structure causing reduction in optical band gap

Design and Synthesis of Donor-Acceptor Low Band Gap Copolymers for Photoconductive and Non-linear Optical Applications

The main focus of the present study was to develop ideal low band gap D-A copolymers for photoconducting and non-linear optical applications. This chapter summarizes the overall research work done. Designed copolymers were synthesized via direct arylation or Suzuki coupling reactions. Copolymers were characterized by theoretical and experimental methods. The suitability of these copolymers in photoconducting and optical limiting devices has been investigated.The results suggest that the copolymers investigated in the present study have a good non-linear optical response and are comparable to or even better than the D-A copolymers reported in the literature and hence could be chosen as ideal candidates with potential applications for non-linear optics. The results also show that the structures of the polymers have great impact on NLO properties. Copolymers studied here exhibits good optical limiting property at 532 nm wavelength due to two-photon absorption (TPA) process. The results revealed that the two copolymers, (P(EDOT-BTSe) and P(PH-TZ)) exhibited strong two-photon absorption and superior optical power limiting properties, which are much better than that of others.