Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Broad-Band Gap Coupled Microstrip Antenna

A microstrip antenna with large bandwidth is developed using a parasitic technique . Compared to the available wide-baud antennas,the proposed antenna structure is very compact and gives a lessdistorted radiation pattern with frequency . An impedance bandwidth,eight times that of a conventional patch antenna of the same size, Isachieved. The concept of coupled microstrip line model Is extended fortheoretical interpretation of the impedance loci

Comparison of Electromagnetic Band Gap and Split-Ring Resonator Microstrip Lines as Stop Band Structures

In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG

Growth and characterization of nanostructured wide band gap semiconductors for optoelectronic applications

Department of Physics, Cochin University of Science and Technology

A low-inductance, long-life, triggered spark gap switch for Blumlein-driven lasers

A low inductance, triggered spark gap switch suitable for a high-current fast discharge system has been developed. The details of the design and fabrication of this pressurized spark gap, which uses only commonly available materials are described. A transverse discharge Blumlein-driven N2 laser incorporating this device gives a peak output power of 700 kW with a FWHM of 3 ns and an efficiency of 0.51%, which is remarkably high for a pulsed nitrogen laser system.

Metastable States and Irregular Behaviour in a Josephson Junction with Nonlinear Resistance

We consider a resistively shunted Josephson junction with a resistance that depends inversely on voltage. It is shown that such a junction in the underdamped case can give rise to extremely long-lived metastable states even in the absence of external noise. We investigate numerically this metastable state and its transition to a chaotic state. The junction voltages corresponding to these states are studied.

Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.

Creation and Annihilation of Fluxons in ac‐driven Semi-annular Josephson Junction

A new geometry (semiannular) for Josephson junction has been proposed and theoretical studies have shown that the new geometry is useful for electronic applications [1, 2]. In this work we study the voltage‐current response of the junction with a periodic modulation. The fluxon experiences an oscillating potential in the presence of the ac‐bias which increases the depinning current value. We show that in a system with periodic boundary conditions, average progressive motion of fluxon commences after the amplitude of the ac drive exceeds a certain threshold value. The analytic studies are justified by simulating the equation using finite‐difference method. We observe creation and annihilation of fluxons in semiannular Josephson junction with an ac‐bias in the presence of an external magnetic field.

A Study Of The Marketing Channels Of Natural Rubber With Special Reference To Co-Operative Marketing In Kerala

The study is designed to gather, record, analyse and critically evaluate data on natural rubber production, consumption and marketing in Kerala. The scope of the study also covers the processing of natural rubber by rubber growers, especially small growers. Taking into consideration Kerala’s supremacy in natural rubber cultivation, a detailed study of marketing channels of natural rubber in Kerala, by giving special reference to co-operative rubber marketing has been given importance. Attempt has also been made to collect secondary data of the last 15 years

Structure of marketing channels of selected manufacturing industries in Kerala

The study evolved from the basic premise that the existing distribution structure is not adequate or adaptive to meet the needs of the expanding manufacturing sector and the emerging mass market. The hypothised causes of the problem are the following: marketing channels are not used for strategy differentiation by manufacturers: there are too many intermediaries in the channels; the distributive institutions are not adaptive; and there is very little control over the flow of products through the channels. These assumptions about the causes of the problem have been translated into specific hypotheses and tested with data. Empirical analysis, while supporting some of these hypotheses, challenges certain widely held notions. The ensuing summary presents the important findings, in the sequence in which they are discussed in the study.

Gap Analysis For Implementing Tqm In Seafood Exporting Firms

Gap analysis is a very useful tool for firms contemplating adoption of a new system. This paper envisages the use of the gap analysis tool as a precursor for Indian seafood exporting firms to adopt total quality management. Total quality management (TQM) is a management philosophy which strives to put quality at the forefront of all its decision-making, thereby satisfying customers. We therefore recommend that firms adopt the TQM system for better alignment of management goals. The gap analysis tool serves as a roadmap for TQM implementation, by showing the management where they actually are and where they want to be. The main gaps were found to be in the areas of usage of SPC tools (66.7%), benchmarking (65.6%), top management commitment (56.25%) and customer focus (48.1%).