Visible luminescence mechanism in nano ZnO under weak confinement regime

We describe the structure of luminescence spectrum in the visible region in nano-ZnO in colloidal and thin film forms under weak confinement regime by modeling the transition from excited state energy levels of excitons to their ground state. Measurements on nanocrystallites indicate the presence of luminescence due to excitonic emissions when excited with 255 nm. The relevant energy levels showing the transitions corresponding to the observed peaks in the emission spectrum of ZnO of particle size 18 nm are identified.

Conduction mechanism in plasma polymerized aniline thin films

Electrical properties of ac plasma polymerized aniline thin films are investigated with a view of determining the dominant conduction mechanism. The current–voltage (I–V) characteristics in symmetric and asymmetric electrode configuration for polyaniline thin films in the thickness range from 1300 to 2000 A ° are investigated. From the studies on asymmetric electrode configuration, it is found that the dominant conduction mechanism in these films is of Schottky type

On conduction mechanism in paramagnetic phase of Gd based manganites

Materials belonging to the family of manganites are technologically important since they exhibit colossal magneto resistance. A proper understanding of the transport properties is very vital in tailoring the properties. A heavy rare earth doped manganite like Gd0·7Sr0·3MnO3 is purported to be exhibiting unusual properties because of smaller ionic radius of Gd. Gd0·7Sr0·3MnO3 is prepared by a wet solid state reaction method. The conduction mechanism in such a compound has been elucidated by subjecting the material to low temperature d.c. conductivity measurement. It has been found that the low band width material follows a variable range hopping (VRH) model followed by a small polaron hopping (SPH) model. The results are presented here

Mechanism of ac conduction in nanostructured manganese zinc mixed ferrites

Mn1−xZnxFe2O4 nanoparticles (x = 0 to 1) were synthesized by the wet chemical co-precipitation technique. X-ray diffraction and transmission electron microscopy and high resolution transmission electron microscopy were effectively utilized to investigate the different structural parameters. The ac conductivity of nanosized Mn1−xZnxFe2O4 were investigated as a function of frequency, temperature and composition. The frequency dependence of ac conductivity is analysed by the power law σ(ω)ac = Bωn which is typical for charge transport by hopping or tunnelling processes. The temperature dependence of frequency exponent n was investigated to understand the conduction mechanism in different compositions. The conduction mechanisms are mainly based on polaron hopping conduction

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

DC electrical conductivity and phase transitions in (NH4)3H(SO4)2

Four distinct peaks are observed at 140, -26, -132 and -140°C in the sigma x* against T-1 plot between 200 and - 196°C for (NH4)3H(SO4)2, corresponding to four different phase transitions of which the one at -26°C is reported here for the first time. Data on doped samples reveal the charge transport mechanism in the crystal.

Amidino Thiourea as a Secondary Accelerator in Rubber Vulcanization

Earlier studies5773 in our laboratory showed that when a nucleophile is used along with disulphide or sulphenamide accelerators the vulcanization is accelerated greatly and the reaction mechanism is generally nucleophilic in nature. However it was observed that it also changes with the systems under review. The present study, deals with the use of unsubstituted amidino thiourea i.e. aminoimino methyl thiourea(AMT) V in the vulcanization studies of different elastorners and their blends. One of the aims of this study was to get further proof with regard to the theory of nucleophilic reaction mechanism in such binary systems.Mixes containing thiourea are used as controls. AMT is more nucleophilic than TU and this is clear from the fact that the fonner can condense with isothiocynate even in the absence of alkali while TU cannot". Also the guanidinyl group in AMT can facilitate the polarization of the C=S bond favouring a nucleophilic reaction

Electro-Optical Properties of Metal Phthalocyanines and Naphthalocyanines

The thesis deals with the preparation of chemical, optical, thermal and electrical characterization of five compounds, namely metal free naphthalocyanine, vanadyl napthalocyanine, zinc naphlocyanine, europium dinaphthalocyanine, and europium diphthalocyanine in the pristine and iodine-doped forms. Two important technological properties of these compounds have been investigated. The electrical properties are important in applications sensors and semiconductor lasers. Opto-thermal properties assume significance for optical imaging and data recording. The electrical properties were investigated by dc and ac techniques. This work has revealed some novel information on the conduction mechanism in five macrocyclic compounds and their iodine-doped forms. Also useful data on the thermal diffusivity of the target compounds have been obtained by optical techniques.

Scanning Electron Microscopy Studies on Tear and Wear Failure of Short Kevlar Fiber-Thermoplastic- Polyurethane Composite

Tear and wear properties of short kevlar fiber, thermoplastic polcurethane (TPU) composite with respect to fiber loading-and fiber onentation has been studied and the fracture surfaces were examined under scanning electron microscope (SEM). Tear strength first decreased up to 20 phr fiber loading and then gradually increased with increasing fiber loading. Anisotropy in tear strength was evident beyond a fiber loading of 20 phr. Tear fracture surface of unfilled TPU showed sinusoidal folding characteristics of high strength matrix. At low fiber loading the tear failure was mainly due to fibermatrix failure whereas at higher fiber loading the failure occurred by fiber breakage. Abrasion loss shows a continuous rise with increasing fiber loading, the loss in the transverse orientation of fibers being higher than that in the longitudinal orientation. The abraded surface showed lone cracks and ridges parallel to the direction of abrasion indicating an abrasive wear mechanism. In the presence of fber the abrasion loss was mainly due to fiber low.

Direction Dependent Transmission Characteristics of Dye Mixture Doped Polymer Optical Fibre Preforms

The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

Direction Dependent Transmission Characteristics of Dye Mixture Doped Polymer Optical Fibre Preforms

The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

Direction Dependent Transmission Characteristics of Dye Mixture Doped Polymer Optical Fibre Preforms

The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors

Thermal characterization of intrinsic and extrinsic InP using photoacoustic technique

An open photoacoustic cell operating in the low range of chopping frequency has been employed to evaluate the thermal diffusivity values of intrinsic InP and InP doped with S, Sn and Fe. The experimental set-up is calibrated by the evaluation of thermal diffusivity value of pure Si and GaAs. The present investigation shows that doped samples show a reduced value for thermal diffusivity compared to intrinsic sample. From the analysis of data it is also seen that nature of dopant clearly influences the thermal diffusivity value of semiconductors. The results are explained in terms of phonon assisted heat transfer mechanism in semiconductors