Synthesis, Characterization and Catalytic Activity of Nanocrystalline Ceria Modified With Zirconia

The use of catalysts in chemical and refining processes has increased rapidly since 1945, when oil began to replace coal as the most important industrial raw material. Catalysis has a major impact on the quality of human life as well as economic development. The demand for catalysts is still increasing since catalysis is looked up as a solution to eliminate or replace polluting processes. Metal oxides represent one of the most important and widely employed classes of solid catalysts. Much effort has been spent in the preparation, characterization and application of metal oxides. Recently, great interest has been devoted to the cerium dioxide (CeO2) containing materials due to their broad range of applications in various fields, ranging from catalysis to ceramics, fuel cell technologies, gas sensors, solid state electrolytes, ceramic biomaterials, etc., in addition to the classical application of CeO2 as an additive in the so-called three way catalysts (TWC) for automotive exhaust treatment. Moreover, it can promote water gas shift and steam reforming reactions, favours catalytic activity at the interfacial metal-support sites. The solid solutions of ceria with Group IV transitional-metals deserve particular attention for their applicability in various technologically important catalytic processes. Mesoporous CeO2−ZrO2 solid solutions have been reported to be employed in various reactions which include CO oxidation, soot oxidation, water-gas shift reaction, and so on. Inspired by the unique and promising characteristics of ceria based mixed oxides and solid solutions for various applications, we have selected ceria-zirconia oxides for our studies. The focus of the work is the synthesis and investigation of the structural and catalytic properties of modified and pure ceria-zirconia mixed oxide.

Automation of Chemical Spray Pyrolysis Unit and Fabrication of Sprayed CuInS2/In2S3 Solar Cell

Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.