Low-voltage driven ZnS:Mn MIS and MISIM thin film electroluminescent devices with Eu2O3 insulator layer

AC thin film electroluminescent devices of MIS and MISIM have been fabricated with a novel dielectric layer of Eu2O3 as an insulator. The threshold voltage for light emission is found to depend strongly on the frequency of excitation source in these devices. These devices are fabricated with an active layer of ZnS:Mn and a novel dielectric layer of Eu2O3 as an insulator. The observed frequency dependence of brightness-voltage characteristics has been explained on the basis of the loss characteristic of the insulator layer. Changes in the threshold voltage and brightness with variation in emitting or insulating film thickness have been investigated in metal-insulator-semiconductor (MIS) structures. It has been found that the decrease in brightness occurring with decreasing ZnS layer thickness can be compensated by an increase in brightness obtained by reducing the insulator thickness. The optimal condition for low threshold voltage and higher stability has been shown to occur when the active layer to insulator thickness ratio lies between one and two.

Dielectric Properties of Electron Beam Evaporated Samarium Oxide Films

The dielectric properties of electron beam evaporated Sm2O3 films have been investigated in the frequency range from 1 kHz to 1 MHz at various temperatures (300 K-453 K). The dielectric constant is found to depend on film thickness and it attains a constant value beyond 1000 A. The present electron beam evaporated Sm2O3 films have a high dielectric constant of 43. The frequency dependence of and tan teeta at various temperatures is also studied.

On the dielectric dispersion and absorption in nanosized manganese zinc mixed ferrites

The temperature and frequency dependence of dielectric permittivity and dielectric loss of nanosized Mn1−xZnxFe2O4 (for x = 0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The impact of zinc substitution on the dielectric properties of the mixed ferrite is elucidated. Strong dielectric dispersion and broad relaxation were exhibited by Mn1−xZnxFe2O4. The variation of dielectric relaxation time with temperature suggests the involvement of multiple relaxation processes. Cole–Cole plots were employed as an effective tool for studying the observed phenomenon. The activation energies were calculated from relaxation peaks and Cole–Cole plots and found to be consistent with each other and indicative of a polaron conduction

Mechanism of ac conduction in nanostructured manganese zinc mixed ferrites

Mn1−xZnxFe2O4 nanoparticles (x = 0 to 1) were synthesized by the wet chemical co-precipitation technique. X-ray diffraction and transmission electron microscopy and high resolution transmission electron microscopy were effectively utilized to investigate the different structural parameters. The ac conductivity of nanosized Mn1−xZnxFe2O4 were investigated as a function of frequency, temperature and composition. The frequency dependence of ac conductivity is analysed by the power law σ(ω)ac = Bωn which is typical for charge transport by hopping or tunnelling processes. The temperature dependence of frequency exponent n was investigated to understand the conduction mechanism in different compositions. The conduction mechanisms are mainly based on polaron hopping conduction