Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Line of Brillouin-Erbium Fiber Laser Utilizing a Fabry-Perot Cavity in L-band

In this paper, the generation of a multiwavelength laser source from a Brillouin -Erbium fiber laser in the long wavelength band (L-band) region is experimentally demonstrated. The proposed laser system utilizes a Fabrv-Perot cavity formed by fiber-loop mirrors. Twenty-four lines of Brillouin-Stokes with line spacings of 10 GHz are obtained in the L-band region

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Temporal and Spatial Behavior of Electron Density and Temperature in a Laser-Produced Plasma from YBa2Cu3O7

Spectroscopic studies of laser -induced plasma from a high-temperature superconducting material, viz., YBa2Cu3O7 (YBCO), have been carried out. Electron temperature and electron density measurements were made from spectral data. The Stark broad ening of emission lines was used to determine the electron density, and the ratio of line in tensities was exploited for the determination of electron temperature. An initial electron temperature of 2.35 eV and electron density of 2.5 3 1017 cm2 3 were observed. The dependence on electron temperature and density on different experimental parameters such as distance from the target, delay time after the in itiation of the plasm a, and laser irradiance is also discussed in detail. Index Headings: Laser -plasma spectroscopy; Plasma diagnostics; Emission spectroscop y; YBa2Cu3O7.

Spatial and temporal analysis of laser induced plasma from a polymer sample

Spatial and temporal analyses of the spectra of the laser induced plasma from a polytetrafluroethylene (PTFE) target obtained with the 1.06 mu m radiation from a Q-switched Nd:YAG laser have been carried out. The spatially resolved spectra of the plasma emission show that molecular bands of C2 (Swan bands) and CN are very intense in the outer regions of the plasma, whereas higher ionized states of carbon are predominant in the core region of the plasma emission. The vibrational temperature and population distribution in the different vibrational levels have been studied as a function of laser energy. From the time resolved studies, it has been observed that there exist fairly large time delays for the onset of emission from all the species in the outer region of the plasma. The molecular bands in each region exhibit much larger time delays in comparison to the ionic lines in the plasma.

Temporal and spatial evolution of C2 in laser induced plasma from graphite target

Laser ablation of graphite has been carried out using 1.06mm radiation from a Q-switched Nd:YAG laser and the time of flight distribution of molecular C2 present in the resultant plasma is investigated in terms of distance from the target as well as laser fluences employing time resolved spectroscopic technique. At low laser fluences the intensities of the emission lines from C2 exhibit only single peak structure while beyond a threshold laser fluence, emission from C2 shows a twin peak distribution in time. The occurrence of the faster velocity component at higher laser fluences is explained as due to species generated from recombination processes while the delayed peak is attributed to dissociation of higher carbon clusters resulting in the generation of C2 molecule. Analysis of measured data provides a fairly complete picture of the evolution and dynamics of C2 species in the laser induced plasma from graphite.

Characteristics of laser-induced plasma from highTc superconductor

The spectroscopic analysis of the emission from the plasma produced by irradiating a highT c superconducting GdBa2Cu3O7 target with a high power Nd:YAG laser beam shows the existence of the bands from different oxides in addition to the lines from neutrals and ions of the constituent elements. The spectral emissions by oxide species in laser-induced plasma show considerable time delays as compared to those from neutral and ionic species. Recombination processes taking place during the cooling of the hot plasma, rather than the plasma expansion velocities, have been found to be responsible for the observed time delays in this case. The decays of emission intensities from various species are found to be non-exponential.

Modification of spectral characteristics and optogalvanic response in neon hollow cathode under laser excitation

The changes in emission characteristics of a neon hollow cathode discharge by resonant laser excitation of 1s 5→2p 2 and 1s 5→2p 4 transition have been studied by simultaneously monitoring the optogalvanic effect and the laser induced fluorescence. It has been observed that resonant excitation causes substantial variation in the relative intensities of lines in the emission spectrum of neon discharge.

Laser induced fluorescence of BaS: Sm phosphor and energy level splitting of Sm3+ ion

Fluorescence of BaS: Sm phosphor has been studied using a pulsed Nitrogen laser (337.1 nm) as the excitation source. The spectrum consists of a broad band in the region 540–660nm superposed by the characteristic Sm3+ lines. Energy level splitting pattern of Sm3+ due to crystal field effects has been calculated and relevent field parameters are evaluated. Analysis shows that Sm3+ takes up Ba2+ substitutional sites.

Methylene Blue Doped Polymers: efficient Media for Optical Recording

Polymer materials find application in optical storage technology, namely in the development of high information density and fast access type memories. A new polymer blend of methylene blue sensitized polyvinyl alcohol (PVA) and polyacrylic acid (PAA) in methanol is prepared and characterized and its comparison with methylene blue sensitized PVA in methanol and complexed methylene blue sensitized polyvinyl chloride (CMBPVC) is presented. The optical absorption spectra of the thin films of these polymers showed a strong and broad absorption region at 670-650 nm, matching the wavelength of the laser used. A very slow recovery of the dye on irradiation was observed when a 7:3 blend of polyvinyl alcohol/polyacrylic acid at a pHof 3.8 and a sensitizer concentration of 4.67 10 5 g/ml were used. A diffraction efficiency of up to 20% was observed for the MBPVA/alcohol system and an energetic sensitivity of 2000 mJ/cm2 was obtained in the photosensitive films with a spatial frequency of 588 lines/mm.

Photosensitivity of Laser Dye Mixtures in Polymer Matrix – A Photoacoustic Study

Laser induced photoacoustic (PA) technique is used in the study of photostability of polymethyl methacrylate (PMMA) films doped with Rhodamine 6G -Rhodamine B dye system. Energy transfer from a donor molecule to an acceptor molecule in a dye mixture affects the output of the dye system. Details of investigations on the role of laser power, modulation frequency and the irradiation wavelength on the photosensitivity of the dye mixture doped PMMA films are presented.

Characterisation of Transparent Conducting Thin Films Grown by Pulsed Laser Deposition and RF Magnetron Sputtering

Materials exhibiting transparency and electrical conductivity simultaneously, transparent conductors, Transparent conducting oxides (TCOs), which have high transparency through the visible spectrum and high electrical conductivity are already being used in numerous applications. Low-emission windows that allow visible light through while reflecting the infrared, this keeps the heat out in summer, or the heat in, in winter. A thin conducting layer on or in between the glass panes achieves this. Low-emission windows use mostly F-doped SnO2. Most of these TCO’s are n type semiconductors and are utilized in a variety of commercial applications, such as flat-panel displays, photovoltaic devices, and electrochromic windows, in which they serve as transparent electrodes. Novel functions may be integrated into the materials since oxides have a variety of elements and crystal structures, providing great potential for realizing a diverse range of active functions. However, the application of TCOs has been restricted to transparent electrodes, notwithstanding the fact that TCOs are n-type semiconductors. The primary reason is the lack of p-type TCOs, because many of the active functions in semiconductors originate from the nature of the pn-junction. In 1997, H. Kawazoe et al.[2] reported CuAlO2 thin films as a first p-type TCO along with a chemical design concept for the exploration of other p-type TCOs.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.