Dielectric Properties of Electron Beam Evaporated Samarium Oxide Films

The dielectric properties of electron beam evaporated Sm2O3 films have been investigated in the frequency range from 1 kHz to 1 MHz at various temperatures (300 K-453 K). The dielectric constant is found to depend on film thickness and it attains a constant value beyond 1000 A. The present electron beam evaporated Sm2O3 films have a high dielectric constant of 43. The frequency dependence of and tan teeta at various temperatures is also studied.

Electrical switching studies on the thin films of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon

This thesis Entitled Electrical switching studies on the thin flims of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon.A general introduction to the switching and allied phenomena is presented. Subsequently, developments of switching in thin films are described. The Mott transition is qualitatively presented. The working of a switching transitor is outlined and compared to the switching observed in thin films. Characteristic parameters of switching such as threshold voltage, time response to a, voltage pulse, and delay time are described. The various switching configurations commonly used are discussed. The mechanisms used to explain the switching behaviour like thermal, electrothermal and purely electronic are reviewed. Finally the scope, feasibility and the importance of polymer thin films in switching are highlighted.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Structural, electronic, and optical properties of amorphous and transparent zinc tin oxide films deposited on glass substrates by pulsed laser deposition (PLD) were examined for two chemical compositions of Zn:Sn=1:1 and 2:1 as a function of oxygen partial pressure PO2 used for the film deposition and annealing temperature. Different from a previous report on sputter-deposited films Chiang et al., Appl. Phys. Lett. 86, 013503 2005 , the PLD-deposited films crystallized at a lower temperature 450 °C to give crystalline ZnO and SnO2 phases. The optical band gaps Tauc gaps were 2.80−2.85 eV and almost independent of oxygen PO2 , which are smaller than those of the corresponding crystals 3.35−3.89 eV . Films deposited at low PO2 showed significant subgap absorptions, which were reduced by postthermal annealing. Hall mobility showed steep increases when carrier concentration exceeded threshold values and the threshold value depended on the film chemical composition. The films deposited at low PO2 2 Pa had low carrier concentrations. It is thought that the low PO2 produced high-density oxygen deficiencies and generated electrons, but these electrons were trapped in localized states, which would be observed as the subgap absorptions. Similar effects were observed for 600 °C crystallized films and their resistivities were increased by formation of subgap states due to the reducing high-temperature condition. High carrier concentrations and large mobilities were obtained in an intermediate PO2 region for the as-deposited films.

Metglas thin film based magnetostrictive transducers for use in long period fibre grating sensors

Metallic glass alloy Metglas 2826 MB based amorphous magnetic thin films were fabricated by the thermal evaporation technique. Transmission electron micrographs and electron diffraction pattern showed the amorphous nature of the films. Composition of the films was analyzed employing x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy techniques. The film was integrated to a long period fibre grating. It was observed that the resonance wavelength of the fibre grating decreased with an increase in the magnetic field. Change in the resonance wavelength was minimal at higher magnetic fields. Field dependent magnetostriction values revealed the potential application of these films in magnetostrictive sensor devices

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Laser emission from transversely pumped dye-doped free-standing polymer film

We present a compact solid-state laser based on leaky mode propagation from a dye-doped polymer free-standing film waveguide. The edge emitted spectrum clearly indicated the existence of periodic resonant modes. The reflections from the lateral faces of the free-standing film provided the optical feedback thus giving rise to a Fabry–Perot like optical cavity. This together with the guidance through the gain medium gave rise to intense narrow emission lines. For a pump energy of 1.82 mJ/pulse, an intense line with FWHM ∼0.4 nmwas observed at 576.5 nm.

Loss characterization in rhodamine 6G doped polymer film waveguide by side illumination fluorescence

We report the position dependent tuning of fluorescence emission from rhodamine 6G doped polymethylmethacrylate film waveguide using a side illumination technique. The transmitted fluorescence as a function of the distance from the point of illumination is measured by translating the waveguide horizontally across a monochromatic light source. This technique has been utilized to characterize the optical loss in dye doped waveguides. We observe that the optical loss coefficients for shorter and longer distances of propagation through the dye doped waveguide are different. At longer distance of propagation a decrease in optical loss coefficient is observed

Engineering the Properties of Indium Sulfide for Thin Film Solar Cells by Doping

In the present work, structural, optical and electrical properties of indium sulfide are tuned by specific and controlled doping. Silver, tin, copper and chlorine were used as the doping elements. In2S3 thin films for the present study were prepared using a simple and low cost “Chemical Spray Pyrolysis (CSP)” technique. This technique is adaptable for large-area deposition of thin films in any required shape and facilitates easiness of doping and/or variation of atomic ratio. It involves spraying a solution, usually aqueous, containing soluble salts of the constituents of the desired compound onto a heated substrate. Doping process was optimized for different doping concentrations. On optimizing doping conditions, we tuned the structural, optical and electrical properties of indium sulfide thin films making them perform as an ideal buffer layer.