Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

The optical and carrier transport properties of amorphous transparent zinc indium tin oxide (ZITO)(a-ZITO) thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA . The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on–off current ratios 107–108 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm2 V−1 s−1 for the TFTs with Zn contents varying from 5 to 48 atom %. The role of Zn content is also discussed in relation to the carrier transport properties and amorphous structures.

Acidity/basicity, electron donor properties and catalytic activity of sulphate modified stannic oxide

The surface electron donor properties of sulphate modified stannic oxide have been determined from the adsorption of electron acceptors of various electron affinities on the oxide surface. The acid base properties of stannic oxide have been determined by titration method using Hammett indicators. Catalytic activities of the oxide for esterification of acetic acid using n-butanol.reduction of cyclohexanone in 2-propanol and oxidation of cyclohexanol with benzophenone have been studied. The data have been correlated with the surface electron donor properties of these oxides. The activity for reduction and oxidation decreases and that for esterification reaction increases on modification with sulphate ion. It has heen found that electron donating capacity decreased when stannic oxide was modified with sulphate ion.

Acidity / basicity and electron donor properties and catalytic activity of sulphated titania

The surface acidity/ basicity of TiO2 (rutile) and its sulphate modified form have been determined by titration method using Hammett indicators after activation at different temperatures. The electron donating properties of these oxides are also studied from the adsorption of electron acceptors of different electron affinity values. The data have been correlated with the catalytic activity of these oxides towards esterification of acetic acid using n-butanol, reduction of cyclohexanone in isopropanol and oxidation of cyclohexanol in benzophenone. Catalytic activity for esterification and oxidation reaction parallels the acidity while that for reduction reaction parallels the basicity of these oxides.

Acidity/basicity, electron donor properties and catalytic activity of sulphate modified ceria

The changes in surface acidity/basicity and catalytic activity of cerium oxide due to surface modification by sulphate ion have been investigated. Electron donor properties of both the modified and unmodified oxides have been studied using electron acceptors of various electron affinity values, viz. 7,7,8,8-tetracyanoquinodimethane, 2,3,5,6-tetrachloro--l, 4-benzoquinone. p-dinitrobenzene and m-dinitrobenzene in order to find out whether the increase in acidity on suphation is due to the generation of new acidic sites or they are formed at the expense of some of the basic sites. The surface acidity/basicity has been determined using a set of Hammett indicators. The data have been correlated with the catalytic activity of the oxides for esterification of acetic acid using l-butanol, reduction of cyclohexanone with 2- propanol and oxidation of cyclohexanol using benzophenone.

Laser Induced Photothermal Investigations on Thermal and Transport Properties of Certain Selected Photonic Materials

Discovery of coherent optical sources four decades ago has revolutionized all fields of scientific development. One of the path breaking applications of lasers is the emergence of various thermo optic techniques to unravel some of the mysteries of light matter interactions.Thermo optic technique is a valuable tool to evaluate optical and thermal properties of materials in solid,liquid and gaseous states .This technique can also be employed effectively in nondestructive quality evaluation. In this doctoral thesis , the use of photothermal techniques based on photoacoustic and photothermal deflection phenomena for the study of certain class of photonics materials such as semiconductors, nano metal dispersed ceramics, composites of conducting polymers and liquid crystals is elaborated.

Electron donating properties and catalytic actiVity of cerium oxide and its mixed oxides with alumina

The electron donating properties of Ce02 and its mixed oxides with alumina have been determined from the studies of adsorption of electron acceptors of various electron affinities on the surface of these oxides. The catalytic activity of these oxides towards some reactions such as oxidation of alcohols and reduction of ketones have been Correlated with their surface electrondonor properties. The surface acidity/basicity of these oxides have also been determined by titration method using a set of Hammett indicators.

Basicity and electron donor properties of lanthanum oxide and its mixed oxides with alumina

The electron donating properties of La2O3 activated at 300, 500 and 800·C and its mixed oxides with alumina are reported from the studies on adsorption of electron acceptors of varying electron affinity on La203. The electron acceptors with their electron affinity values given in parenthesis are: 7,7,8,8-tetracyanoquinodimethane (2.84 eV), 2,3,5,6-tetrachloro-I,4-benzoquinone (2.40 eV) and p-dinitrobenzene(l.77eV). The basicity of the oxide has been determined by titration with n-butylamine and Ho.max values are reported. The limit of electron transfer from the oxide to the electron acceptor is between 2.40 and 1.77 eV. It is observed that La203 promotes the surface electron properties of alumina without changing its limit of electron transfer.

Surface Electron Donor Properties of Dy2O3,Y2O3 and Their Mixed Oxides with Alumina Catalyst

The limit of electron transfer in electron affinity from the oxide surface to the electron acceptor (EA) are reported from the adsorption of EA on DY203, mixed oxides of DY203 with alumina and mixed oxides of Y203 with y-alumina. The extent of electron transfer is understood from magnetic measurements.

Acid-base and Electron Donor Properties of Pr6O11 and Its Mixtures with Alumina

The electron donor properties of Pr6O11 activated at 300. 500 and 800°C are reported from the studies on adsorption of electron acceptors of various electron affinity (7. 7, 8, 8-tetracyanoquinodimethane. 2, 3. 5, 6-tetrachloro-l, 4-benzoquin one. p-dinitrobenzene. and m-dinitrobenzene) in three solvents (acetonitrile, 1,4-dioxan and ethyl acetate). The extent of electron transfer during adsorption is understood from magnetic measurements and ESR spectral data. The corresponding data on mixed oxides of Pr and Al are reported for various compositions, The acid / base properties of these oxides are determined using a set of Hammett indicators.

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho’s theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters—viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity—as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers.

Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions.

Thermal transport properties of selected ferroelectrics, mixed valance perovskites and dielectric ceramics using photopyroelectric technique

Photothermal spectroscopy is a group of high sensitivity methods used to measure optical absorption and thermal characteristics of a sample.The basis of photothermal spectroscopy is a photo-induced change in the thermal state of the sample.Light energy absorbed and not lost by subsequent emission results in sample heating.This heating results in a temperature change as well as changes in thermodynamic parameters of the sample which are related to temperature.Measurements of the temperature,pressure,or density changes that occur due to optical absorption are ultimately the basis for the photothermal spectroscopic methods.This is a more direct measure of optical absorption than optical transmission based spectroscopies.Sample heating is a direct consequence of optical absorption and so photothermal spectroscopy signals are directly dependent on light absorption.Scattering and reflection losses do not produce photothermal signals.Subsequently,photothermal spectroscopy more accurately measures optical absorption in scattering solutions,in solids,and at interfaces.This aspect makes it particularly attractive for application to surface and solid absorption studies,and studies in scattering media.