Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures

Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by 12 pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at 13 different pressures. These heterojunctions were found to be rectifying with a 14 maximum forward-to-reverse current ratio of about 1,000 in the applied 15 voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was 16 found to depend on the ambient oxygen pressure during the growth of the ZnO 17 film. The current density–voltage characteristics and the variation of the 18 series resistance of the n-ZnO/p-Si heterojunctions were found to be in line 19 with the Anderson model and Burstein-Moss (BM) shift.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

Spectral and nonlinear optical characterization of ZnO nanocomposites

The spectral and nonlinear optical characteristics of nano ZnO and its composites are investigated. The fluorescence behaviour of nano colloids of ZnO has been studied as a function of the excitation wavelength and there is a red shift in emission peak with excitation wavelength. Apart from the observation of the reported ultra violet and green emissions, our results reveal that additional blue emissions at 420 nm and 490 nm are developed with increasing particle size. Systematic studies on nano ZnO have indicated the presence of luminescence due to excitonic emissions when excited with 255 nm as well as significant contribution from surface defect states when excited with 325 nm. In the weak confinement regime, the third-order optical susceptibility χ(3) increases with increasing particle size (R) and annealing temperature (T) and a R2 and T2.5 dependence of χ(3) is obtained for nano ZnO. ZnO nanocolloids exhibit induced absorption whereas the self assembled films of ZnO exhibit saturable absorption due to saturation of linear absorption of ZnO defect states and electronic effects. ZnO nanocomposites exhibit negative nonlinear index of refraction which can be attributed to two photon absorption followed by weak free carrier absorption. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. The nonlinear response of ZnO nanocomposites is wavelength dependent and switching from induced absorption to saturable absorption has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an optical limiter. ZnO based nanocomposites are potential materials for enhanced and tunable light emission and for the development of nonlinear optical devices with a relatively small optical limiting threshold.

Spectral and Nonlinear Optical Characteristics of ZnO Nanocomposites

The spectral and nonlinear optical properties of ZnO based nanocomposites prepared by colloidal chemical synthesis are investigated. Very strong UV emissions are observed from ZnO–Ag, ZnO– Cu and ZnO–SiO2 nanocomposites. The strongest visible emission of a typical ZnO–Cu nanocomposite is over ten times stronger than that of pure Cu due to transition from deep donor level to the copper induced level. The optical band gap of ZnO–CdS and ZnO–TiO2 nanocomposites is tunable and emission peaks changes almost in proportion to changes in band gap. Nonlinear optical response of these nanocomposites is studied using nanosecond laser pulses from a tunable laser in the wavelength range of 450–650 nm at resonance and off-resonance wavelengths. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. The observed nonlinear absorption is explained through two photon absorption followed by weak free carrier absoption, interband absorption and nonlinear scattering mechanisms. The nonlinearity of the silica colloid is low and its nonlinear response can be improved by making composites with ZnO and ZnO–TiO2. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an RSA based optical limiter. These nanocomposites can be used as optical limiters and are potential materials for the light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.

Spectral and Nonlinear Optical Characteristics of ZnO Nanocomposites

The spectral and nonlinear optical properties of ZnO based nanocomposites prepared by colloidal chemical synthesis are investigated. Very strong UV emissions are observed from ZnO–Ag, ZnO– Cu and ZnO–SiO2 nanocomposites. The strongest visible emission of a typical ZnO–Cu nanocomposite is over ten times stronger than that of pure Cu due to transition from deep donor level to the copper induced level. The optical band gap of ZnO–CdS and ZnO–TiO2 nanocomposites is tunable and emission peaks changes almost in proportion to changes in band gap. Nonlinear optical response of these nanocomposites is studied using nanosecond laser pulses from a tunable laser in the wavelength range of 450–650 nm at resonance and off-resonance wavelengths. The nonlinear response is wavelength dependent and switching from RSA to SA has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. The observed nonlinear absorption is explained through two photon absorption followed by weak free carrier absoption, interband absorption and nonlinear scattering mechanisms. The nonlinearity of the silica colloid is low and its nonlinear response can be improved by making composites with ZnO and ZnO–TiO2. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an RSA based optical limiter. These nanocomposites can be used as optical limiters and are potential materials for the light emission and for the development of nonlinear optical devices with a relatively small limiting threshold.

Catalytic oxidation of cyclohexane over Cu-Zn-Cr ternary spinel systems

Spinel systems with the composition of Cu 1−x Zn x Cr 2 O 4 [x = 0 CCr, x = 0.25 CZCr-1, x = 0.5 CZCr-2, x = 0.75 CZCr-3 and x = 1 ZCr] were prepared by homogeneous co-precipitation method and were characterized by X-ray diffraction (XRD) and FT-IR spectroscopy. Elemental analysis was done by EDX, and surface area measurements by the BET method. The redox behavior of these catalysts in cyclohexane oxidation at 243 K using TBHP as oxidant was examined. Cyclohexanone was the major product over all catalysts with some cyclohexanol. 69.2% selectivity to cyclohexanol and cyclohexanone at 23% conversion of cyclohexane was realized over zinc chromite spinels in 10 h.

Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.

Mn2þ-induced room-temperature ferromagnetism and spin-glass behavior in hydrothermally grown Mn-doped ZnO nanorods

The magnetic properties of Mn-doped ZnO (ZnO:Mn) nanorods grown by hydrothermal process at a temperature of 200 8C and a growth time of 3 h have been studied. The samples were characterized by using powder X-ray diffraction with Rietveld refinement, scanning electron microscopy, energy-dispersive X-ray analysis and SQUID magnetometry. Mn (3 wt%) and (5 wt%)-doped ZnO samples exhibit paramagnetic and ferromagnetic behavior, respectively, at room temperature. The spin-glass behavior is observed from the samples with respect to the decrease of temperature. At 10 K, both samples exhibit a hysteresis loop with relatively low coercivity. The room-temperature ferromagnetism in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries, interaction between dopant Mn2þ ions substituted at Zn2þ site and the interaction between Mn2þ ions and Zn2þ ions from the ZnO host lattice

Structural And Surface Morphological Investigation Of Formation Stages Of Highly (002) Oriented Zno Films On Glass Substrates By Spray Pyrolysis Method

ZnO thin films were coated on amorphous glass substrate at various temperatures in the range 160-500 0C by spray pyrolysis method. The as deposited films were characterised by using XRD and SEM. Wurtzite phase of ZnO was formed at a substrate temperature of 400 0C, highly oriented (002) phase was developed with respect to increase of substrate temperature from 450 to 500 0C. Morphological and growth mode of these films were analyzed with respect to structural orientation of films from wurtzite to highly (002) oriented phase. Present study reveals that substrate temperature was one of the important parameters which determine the crystalline quality, population of defects, grain size, orientation and morphology of the films