2 resultados para Complementary metal–oxide–semiconductor (CMOS)
em Cochin University of Science
Resumo:
In this paper equienergetic self-complementary graphs on p vertices for every p = 4k; k ¸ 2 and p = 24t + 1; t ¸ 3 are constructed
Resumo:
In this Letter a new physical model for metal-insulatormetal CMOS capacitors is presented. In the model the parameters of the circuit are derived from the physical structural details. Physical behaviors due to metal skin effect and inductance have been considered. The model has been confirmed by 3D EM simulator and design rules proposed. The model presented is scalable with capacitor geometry, allowing designers to predict and optimize quality factor. The approach has been verified for MIM CMOS capacitors