Optical Emission Diagnostics Of Laser Produced Plasma From Graphite And Yba2cu3o7

This thesis is entitled “OPTICAL EMISSION DIAGNOSTICS OF LASER PRODUCED PLASMA FROM GRAPHITE AND YBa2Cu3O7. The work presented in this thesis covers the experimental results on the plasma produced with moderately high power laser with irradiance range in between 10 GW cm 2 to 100 GW cm -2. The characterization of laser produced plasma from solid targets viz. graphite and high temperature superconducting material like YBa2Cu3O7 have been carried out. The fundamental frequency from a Q - switched Nd: YAG laser with 9 ns pulse duration is used for the present studies. Various optical emission emission diagnostic techniques were employed for the the characterization of the LPP which include emission spectroscopy, time resolved studies, line broadening method etc. In order to understand the physical nature of the LPP like recombination, collisional excitation and the laser interaction with plasma, the time resolved studies offer the most logical approach

Photoconductivity studies on some semiconducting thin films for photovoltaic applications

Photoconductivity (PC) processes may be the most suitable technique for obtaining information about the states in the gap. It finds applications in photovoItaics, photo detection and radiation measurements. The main task in the area of photovoltaics, is to increase the efficiency of the device and also to develop new materials with good optoelectronic properties useful for energy conversion, keeping the idea of cost effectiveness. Photoconduction includes generation and recombination of carriers and their transport to the electrodes. So thermal relaxation process, charge carrier statistics, effects of electrodes and several mechanisms of recombination are involved in photoconductivity.A major effect of trapping is to make the experimentally observed decay time of photocurrent, longer than carrier lifetime. If no trapping centers are present, then observed photocurrent will decay in the same way as the density of free carriers and the observed decay time will be equal to carrier lifetime. If the density of free carriers is much less than density of trapped carriers, the entire decay of photocurrent is effectively dominated by the rate of trap emptying rather than by the rate of recombination.In the present study, the decay time of carriers was measured using photoconductive decay (PCD) technique. For the measurements, the film was loaded in a liquid Helium cryostat and the temperature was controlled using Lakshore Auto tuning temperature controller (Model 321). White light was used to illuminate the required area of the sample. Heat radiation from the light source was avoided by passing the light beam through a water filter. The decay current. after switching off the illumination. was measured using a Kiethely 2000 multi meter. Sets of PCD measurements were taken varying sample temperature, sample preparation temperature, thickness of the film, partial pressure of Oxygen and concentration of a particular element in a compound. Decay times were calculated using the rate window technique, which is a decay sampling technique particularly suited to computerized analysis. For PCD curves with two well-defined regions, two windows were chosen, one at the fast decay region and the other at the slow decay region. The curves in a particular window were exponentially fitted using Microsoft Excel 2000 programme. These decay times were plotted against sample temperature and sample preparation temperature to study the effect of various defects in the film. These studies were done in order to optimize conditions of preparation technique so as to get good photosensitive samples. useful for photovoltaic applications.Materials selected for the study were CdS, In2Se3, CuIn2Se3 and CuInS2• Photoconductivity studies done on these samples are organised in six chapters including introduction and conclusion.

Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

Non-destructive testing (NDT) is the use of non-invasive techniques to determine the integrity of a material, component, or structure. Engineers and scientists use NDT in a variety of applications, including medical imaging, materials analysis, and process control.Photothermal beam deflection technique is one of the most promising NDT technologies. Tremendous R&D effort has been made for improving the efficiency and simplicity of this technique. It is a popular technique because it can probe surfaces irrespective of the size of the sample and its surroundings. This technique has been used to characterize several semiconductor materials, because of its non-destructive and non-contact evaluation strategy. Its application further extends to analysis of wide variety of materials. Instrumentation of a NDT technique is very crucial for any material analysis. Chapter two explores the various excitation sources, source modulation techniques, detection and signal processing schemes currently practised. The features of the experimental arrangement including the steps for alignment, automation, data acquisition and data analysis are explained giving due importance to details.Theoretical studies form the backbone of photothermal techniques. The outcome of a theoretical work is the foundation of an application.The reliability of the theoretical model developed and used is proven from the studies done on crystalline.The technique is applied for analysis of transport properties such as thermal diffusivity, mobility, surface recombination velocity and minority carrier life time of the material and thermal imaging of solar cell absorber layer materials like CuInS2, CuInSe2 and SnS thin films.analysis of In2S3 thin films, which are used as buffer layer material in solar cells. The various influences of film composition, chlorine and silver incorporation in this material is brought out from the measurement of transport properties and analysis of sub band gap levels.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention. Chapter six thus elucidates the theoretical aspects of application of photothermal techniques for solar cell analysis. The experimental design and method for determination of solar cell efficiency, optimum load resistance and series resistance with results from the analysis of CuInS2/In2S3 based solar cell forms the skeleton of this chapter.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Time evolution of Nd:YAG laser-induced plasma from GdBa2Cu3O7 high-Tc superconductor

In order to characterise the laser ablation process from high-Tc superconductors, the time evolution of plasma produced by a Q-switching Nd:YAG laser from a GdBa2Cu3O7 superconducting sample has been studied using spectroscopic and ion-probe techniques. It has been observed that there is a fairly large delay for the onset of the emission from oxide species in comparison with those from atoms and ions of the constituent elements present in the plasma. Faster decay occurs for emission from oxides and ions compared with that from neutral atoms. These observations support the view that oxides are not directly produced from the target, but are formed by the recombination process while the plasma cools down. Plasma parameters such as temperature and velocity are also evaluated.

Temporal and spatial evolution of laser ablated plasma from YBa2Cu3O7

YBa2Cu307 target was laser ablated, and the time-of-flight (TOF) distributions of Y, Y+., and YO in the resultant plasma were investigated as functions of distance from the target and laser energy density using emission spectroscopy. Up to a short distance from the target (-1.5 cm), TOF distributions show twin peaks for Y and YO, while only single-peak distribution is observed for Y+. At greater distances (>1.5 cm) all of them exhibit single-peak distribution. The twin peaks are assigned to species corresponding to those generated directly/m the vicinity of target surface and to those generated from collisional/recombination process.

Temporal and spatial evolution of C2 in laser induced plasma from graphite target

Laser ablation of graphite has been carried out using 1.06mm radiation from a Q-switched Nd:YAG laser and the time of flight distribution of molecular C2 present in the resultant plasma is investigated in terms of distance from the target as well as laser fluences employing time resolved spectroscopic technique. At low laser fluences the intensities of the emission lines from C2 exhibit only single peak structure while beyond a threshold laser fluence, emission from C2 shows a twin peak distribution in time. The occurrence of the faster velocity component at higher laser fluences is explained as due to species generated from recombination processes while the delayed peak is attributed to dissociation of higher carbon clusters resulting in the generation of C2 molecule. Analysis of measured data provides a fairly complete picture of the evolution and dynamics of C2 species in the laser induced plasma from graphite.

Fine structure in the time of flight distribution of C2 in laser produced plasma from graphite

Time resolved optical emission spectroscopy is employed to study the expansion dynamics of C2 species in a graphite plasma produced during the Nd : YAG ablation. At low laser fluences a single peak distribution with low kinetic energy is observed. At higher fluences a twin peak distribution is found. It has been noted that these double peak time of flight distribution splits into a triple peak structure at distances >_ 17mm from the target surface. The reason for the occurrence of multiple peak is due to different formation mechanisms of C2 species

Emission characteristics and dynamics of C2 from laser produced graphite plasma

The emission features of laser ablated graphite plume generated in a helium ambient atmosphere have been investigated with time and space resolved plasma diagnostic technique. Time resolved optical emission spectroscopy is employed to reveal the velocity distribution of different species ejected during ablation. At lower values of laser fluences only a slowly propagating component of C2 is seen. At high fluences emission from C2 shows a twin peak distribution in time. The formation of an emission peak with diminished time delay giving an energetic peak at higher laser fluences is attributed to many body recombination. It is also observed that these double peaks get modified into triple peak time of flight distribution at distances greater than 16 mm from the target. The occurrence of multiple peaks in the C2 emission is mainly due to the delays caused from the different formation mechanism of C2 species. The velocity distribution of the faster peak exhibits an oscillating character with distance from the target surface.

Time Resolved Analysis of C2 Emission from Laser Induced Graphite Plasma in Helium Atmosphere

We report time resolved study of C2 emission from laser produced carbon plasma in presence of ambient helium gas. The 1.06µm: radiation from a Nd:YAG laser was focused onto a graphite target where it·produced a transient plasma. We observed double peak structure in the time profile of C2 species. The twin peaks were observed only after a threshold laser fluence. It is proposed that the faster velocity component in the temporal profiles originates mainly due to recombination processes. The laser fluence and ambient gas dependence of the double peak intensity distribution is also reported.

Characteristics of laser-induced plasma from highTc superconductor

The spectroscopic analysis of the emission from the plasma produced by irradiating a highT c superconducting GdBa2Cu3O7 target with a high power Nd:YAG laser beam shows the existence of the bands from different oxides in addition to the lines from neutrals and ions of the constituent elements. The spectral emissions by oxide species in laser-induced plasma show considerable time delays as compared to those from neutral and ionic species. Recombination processes taking place during the cooling of the hot plasma, rather than the plasma expansion velocities, have been found to be responsible for the observed time delays in this case. The decays of emission intensities from various species are found to be non-exponential.

Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho’s theory of the PA effect. The amplitude of the PA signal gives information about various heat generation mechanisms in semiconductors. The experimental data obtained from the measurement of the PA signal as a function of modulation frequency in a heat transmission configuration were fitted with the phase of PA signal obtained from the theoretical model evaluated by considering four parameters—viz., thermal diffusivity, diffusion coefficient, nonradiative recombination time, and surface recombination velocity—as adjustable parameters. It is seen from the analysis that the photoacoustic technique is sensitive to the changes in the surface states depend on the doping concentration. The study demonstrates the effectiveness of the photoacoustic technique as a noninvasive and nondestructive method to measure and evaluate the thermal and transport properties of epitaxial layers.

Photoacoustic investigation of intrinsic and extrinsic Si

An open-cell configuration of the photoacoustic (PA) technique is employed to determine the thermal and transport properties of intrinsic Si and Si doped with B (p-type) and P (n-type). The experimentally obtained phase of the PA signal under heat transmission configuration is fitted to that of theoretical model by taking thermal and transport properties, namely, thermal diffusivity, diffusion coefficient, and surface recombination velocity, as adjustable parameters. It is seen from the analysis that doping and also the nature of dopant have a strong influence on the thermal and transport properties of semiconductors. The results are interpreted in terms of the carrier-assisted and phonon-assisted heat transfer mechanisms in semiconductors as well as the various scattering processes occurring in the propagation of heat carriers.

Photoacoustic measurement of transport properties in doped GaAs epitaxial layers

The photoacoustic technique under heat transmission configuration is used to determine the effect of doping on both the thermal and transport properties of p- and n-type GaAs epitaxial layers grown on GaAs substrate by the molecular beam epitaxial method. Analysis of the data is made on the basis of the theoretical model of Rosencwaig and Gersho. Thermal and transport properties of the epitaxial layers are found by fitting the phase of the experimentally obtained photoacoustic signal with that of the theoretical model. It is observed that both the thermal and transport properties, i.e. thermal diffusivity, diffusion coefficient, surface recombination velocity and nonradiative recombination time, depend on the type of doping in the epitaxial layer. The results clearly show that the photoacoustic technique using heat transmission configuration is an excellent tool to study the thermal and transport properties of epitaxial layers under different doping conditions.

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2