Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Single-Feed Dual-Band Circularly Polarised Microstrip Antenna

A novel technique for obtaining dual-hand circular polarization (CP) radiation of a single-feed circular microstrip antenna in proposed and demonstrated. By embedding two pain of arc shaped slots of proper lengths close to the boundary of a circular patch, and protruding one of the arc-shaped slots with a narrow slit, the circular microstrip antenna can perform dual-hand CP radiation using a single probe feed. Details of the antenna design

Broad-Band Gap Coupled Microstrip Antenna

A microstrip antenna with large bandwidth is developed using a parasitic technique . Compared to the available wide-baud antennas,the proposed antenna structure is very compact and gives a lessdistorted radiation pattern with frequency . An impedance bandwidth,eight times that of a conventional patch antenna of the same size, Isachieved. The concept of coupled microstrip line model Is extended fortheoretical interpretation of the impedance loci

Wide-band printed dipole antenna

The design and development of an L-band printed dipole antenna. optimized for wide-band applications near first resonance, is reported. This design has achieved more than 48% impedance bandwidth (VSWR 2:1), without degrading its overall radiation efficiency

Dual-band dual-polarized compact microstrip antenna

Experimental studies on a compact dual frequency microstrip antenna are presented. This antenna configuration provides an area reduction of 40% compared to a standard rectangular antenna operating at the same frequency without much degradation of the gain. The antenna structure can be modified to achieve the desired ratio between the two resonant frequencies

A New Compact Dual-Band Dual-Polarized Microstrip Antenna

A new compact dual-band, dual-polarized microstrip antenna is presented. 7'iris antenna resonates at two frequencies with different polarizations: a linearly polarized one for terrestrial communication, and a circularly polarized one for satellite mobile communication. This antenna also provides an area reduction of 70% compared to a standard rectangular patch antenna

Wide Band Rectangular Microstrip Antenna using Symmetric T-shaped Feed

Bandwidth enhancement of a rectangular microstrip antenna using a T-shaped microstrip feed is explored in this paper. A 2:1 VSWR impedance bandwidth of 23% is achieved by employing this technique. The far-field patterns are stable across the pass band. The proposed antenna can be used conveniently in broadband communications

Line of Brillouin-Erbium Fiber Laser Utilizing a Fabry-Perot Cavity in L-band

In this paper, the generation of a multiwavelength laser source from a Brillouin -Erbium fiber laser in the long wavelength band (L-band) region is experimentally demonstrated. The proposed laser system utilizes a Fabrv-Perot cavity formed by fiber-loop mirrors. Twenty-four lines of Brillouin-Stokes with line spacings of 10 GHz are obtained in the L-band region

Comparison of Electromagnetic Band Gap and Split-Ring Resonator Microstrip Lines as Stop Band Structures

In this paper, microstrip lines magnetically coupled to splitring resonators (SRRs) are conquved to electromagnetic bundgup (EBG) nr,rrostrip lines in terns q/ their stop-heard penjbrnmrnce and dimensions. In bath types o/ trunsmis•siou lines, signal propagation is inhibited in it certain jequency bwuL For EBG microstrip lines, the central frequency of such a forbidden band is determined by the period of the structure, whereas in SRR-hased microstrip lines the position of the frequency gap depends on the quasi-static resonant frequency of the rings. The main relevant conrributiun of this paper is to provide a tuning procedure to control the gap width in SRR microstrip lines, and to show that by using SRRs, device dimensions ale much smaller than those required by EBGs in order to obtain similar stop-banal performance. This has been demonstrated by fill-wave electromagnetic simulations and experimentally verified from the characterization ql two fabricated microstrip lines: one with rectangular SRRs etched on the upper substrate side, and the other with a periodic perturbation cf'strip width. For similar rejection and 1-(;H,. gap width centered at 4.5 Gllz, it has been found that the SRR microstrip line is•,fve times shorter. In addition, no ripple is appreciable in the allowed band for the .SRR-hared structure, whereas due to dispersion, certain mismatch is expected in the EBG prototype. Due to the high-frequency selectivity, controllable gap width, and small dimensions, it is believed that SRR coupled to planar transmission lines can have an actual impact on the design of stop-band filters compatible with planar technology, and can be an alternative to present solutions based on distributed approaches or EBG

Novel Wide Band Printed Dipole Antenna

Design, development and experimental observations of a L: band printed dipole antenna is presented.Bandwidth enhancement is achieved by end-loading or the dipole arms. Using the present technique Impedance bandwidth van be enhanced up to 50% without degrading the efficiency of the antenna.

A Compact Electronically Reconfigurable Dual Frequency Microstrip Antenna for L-Band Applications

A novel design of a computer electronically reconfigurable dual frequency dual polarized single feed hexagonal slot loaded microstrip antenna in L-band is introduced in this chapter. pin diodes are used to switch the operating frequencies considerably without much affecting the radiation characteristics and gain. the antenna can work with a frequency ratio varying in the wide range from 1.2 to 1.4. the proposed design has an added advantage of size reduction up to 72.21% and 46.84% for the two resonating frequencies compared to standard rectangular patches. the design also gives considerable bandwidth of up to 2.82% and 2.42 % for the operating frequencies.

Development And Analysis Of A Compact Coplanar Antenna With Flared Monopole For Dual Band Applications

Department of Electronics, Cochin University of Science and Technology

Electroactive Dipyrromethene-Cu(II) Monolayers Deposited onto Gold Electrodes for Voltammetric Determination of Paracetamol

Dipyrromethene-Cu(II) derivatives possessing two dodecane alkyl chains have been used for the modification of gold electrodes. Electroactive host molecules have been incorporated into a lipophilic dodecanethiol SAM deposited onto gold electrodes through hydrophobic and van der Waals interactions (embedment technique). The presence of dipyrromethene-Cu(II) redox centers on the electrode surface was proved by cyclic voltammetry and Osteryoung square-wave voltammetry. The Au electrodes incorporating redox active Cu(II)-dipyrromethene SAMs were used for the direct voltammetric determination of paracetamol in human plasma.

Growth and characterization of nanostructured wide band gap semiconductors for optoelectronic applications

Department of Physics, Cochin University of Science and Technology