Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Studies on the Flammability of Short Kevlar Fiber-Thermoplastic Polyurethane Composite

The flammability of short Kevlar aramide fiber-thermoplastic polyurethane (TPU) has been investigated with respect to fiber loading and various flame retardant additives such as halogen containing polymers, antimony oxide/chlorine donor combination, zinc borate, and aluminum hydroxide. Smoke generation was reduced drastically, while the oxygen index was reduced marginally in the presence of short fibers. The best improvement in the oxygen index was obtained with antimony oxide/chlorinated paraffin wax combination, in the weight ratio 1:6. A 70 phr loading of aluminum hydroxide improved LOI and reduced smoke generation.

Photoacoustic study of the effect of degassing temperature on thermal diffusivity of hydroxyl loaded alumina

The thermal diffusivity of y-alumina is determined by the photoacoustic method. The method is calibrated by determining the thermal diffusivity of copper and aluminum. The effect of the chemisorbed hydroxyl groups or thermal diffusivity is studied by degassing the sample at different temperatures.

Twin peak distribution of electron emission profile and impact ionization of ambient molecules during laser ablation of silver target

Laser-induced plasma generated from a silver target under partial vacuum conditions using the fundamental output of nanosecond duration from a pulsed Nd:yttrium aluminum garnet laser is studied using a Langmuir probe. The time of flight measurements show a clear twin peak distribution in the temporal profile of electron emission. The first peak has almost the same duration as the laser pulse while the second lasts for several microseconds. The prompt electrons are energetic enough ('60 eV) to ionize the ambient gas molecules or atoms. The use of prompt electron pulses as sources for electron impact excitation is demonstrated by taking nitrogen, carbon dioxide, and argon as ambient gases.