Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials

The thesis provides an overall review and introduction to amorphous semiconductors, followed by a brief discussion on the important structural models proposed for chalcogenide glasses and their electrical, optional and thermal properties. It also gives a brief description of the Physics of thin films, ion implantation and Photothermal Deflection Spectroscopy. A brief description of the experimental setup of a photothermal deflection spectrometer and the details of the preparation and optical characterization of the thin film samples. It deals with the employment of the subgap optional absorption measurement by PDS to characterize the defects, amorphization and annealing behavior in silicon implanted with B+ ions and the profiles of ion range and vacancy distribution obtained by the TRIM simulation. It reports the results of all absorption measurements by PDS in nitrogen implanted thin film samples of Ge-Se and As-Se systems

Electron donor strength of rare earth oxides

The adsorption of electron acceptors, viz.,7,7,8,8-tetracyanoquinodimethane(TCNQ), 2,3,5,6-tetrachloro-p- benzoquinone (chloranil) and p-dinitrobenzene (PDNB) on the surface of three rare earth oxides Y2O3, Nd203 and Pr6O11 has been studied in acetonitrile and dioxan. From the radical concentration on the surface determined using ESR spectral data, the electron donor strength of the rare earth oxides are reported.