109 resultados para Dielectric constants


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Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

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A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

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The dielectric and elastic properties are of considerable significance to the science and technology of matter in the solid state. The study of these properties give information about the magnitude of the forces and nature of the bonding between the atoms. Our aim has been to investigate systematically the effect of doping of an appropriate element on the elastic and dielectric properties of selected dielectric ceramics and oxide glasses. These materials have got wide technological applications due to their interesting electrical, optical, thermal and elastic behaviour. Ultrasound propagation and capacitance measurement techniques have been employed for the systematic investigation of the elastic and dielectric properties of selected number of these materials. Details of the work done and results obtained are presented in this thesis.

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Investigations on the design and development of certain new hollow dielectric hom antennas of rectangular cross section have been carried out. The main shortcoming of the existing ordinary hollow dielectric hom antenna (HDH) is the abrupt discontinuity at the feed-end. A new launching technique using a dielectric rod is introduced to overcome this limitation. Also a strip loading technique is employed for further modification of the antenna. Radiation parameters of new I-IDH antennas of Eplane sectoral, H-plane sectoral and pyramidal types were studied and are found to be very attractive. Theoretical approach based on Marcatili’s principle and two aperture theory along with diffraction theory and image theory is used to support the experimental findings. The HDH is considered as solid horn of effective dielectric constant and the aperture field is evaluated. The antenna is excited by the open waveguide in the dominant TE1o mode and so the existence of any hybrid mode is mled-out. The theoretical results are observed to be in good agreement with the experimental results.

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The thesis relates to the investigations carried out on Rectangular Dielectric Resonator Antenna configurations suitable for Mobile Communication applications. The main objectives of the research are to: - numerically compute the radiation characteristics of a Rectangular DRA - identify the resonant modes - validate the numerically predicted data through simulation and experiment 0 ascertain the influence of the geometrical and material parameters upon the radiation behaviour of the antenna ° develop compact Rectangular DRA configurations suitable for Mobile Communication applications Although approximate methods exist to compute the resonant frequency of Rectangular DRA’s, no rigorous analysis techniques have been developed so far to evaluate the resonant modes. In this thesis a 3D-FDTD (Finite Difference Time Domain) Modeller is developed using MATLAB® for the numerical computation of the radiation characteristics of the Rectangular DRA. The F DTD method is a powerful yet simple algorithm that involves the discretimtion and solution of the derivative form of Maxwell’s curl equations in the time domain.

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Experimental investigations on Microstrip line excited Dielectric Resonator Antenna configurations suitable for Mobile Communication applications are reported. High permittivity (εrd = 48) resonator samples with different aspect ratios are employed for the study. Theoretical analysis performed using FDTD method is also presented.

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Polyaniline thin films were prepared by ac plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity of these films were investigated in the frequency range from 100 Hz to 1MHz and in the temperature range from 300 to 373 K. Capacitance and dielectric loss decreased with frequency and increased with temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity σ(ω) was found to vary as ωs with the index s 1. Annealing of polyaniline thin films in high vacuum at 373K for 1 h was found to reduce the dielectric loss. FTIR studies reveal that the aromatic ring is retained in the polyaniline thin films, which enhances the thermal stability of the polymer films

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The effect of frequency, composition and temperature on the a.c. electrical conductivity were studied for the ceramic, Ni1–xZnxFe2O4, as well as the filler (Ni1–xZnxFe2O4) incorporated rubber ferrite composites (RFCs). Ni1–xZnxFe2O4 (where x varies from 0 to 1 in steps of 0×2) were prepared by usual ceramic techniques. They were then incorporated into a butyl rubber matrix according to a specific recipe. The a.c. electrical conductivity (sa.c.) calculations were carried out by using the data available from dielectric measurements and by employing a simple relationship. The a.c. conductivity values were found to be of the order of 10–3 S/m. Analysis of the results shows that sa.c. increases with increase of frequency and the change is same for both ceramic Ni1–xZnxFe2O4 and RFCs. sa.c. increases initially with the increase of zinc content and then decreases with increase of zinc. Same behaviour is observed for RFCs too. The dependence of sa.c. on the volume fraction of the magnetic filler was also studied and it was found that the a.c. conductivity of RFCs increases with increase of volume fraction of the magnetic filler. Temperature dependence of conductivity was studied for both ceramic and rubber ferrite composites. Conductivity shows a linear dependence with temperature in the case of ceramic samples

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Rubber ferrite composites containing various mixed ferrites were prepared for different compositions and various loadings. The magnetic and dielectric properties of the fillers as well as the ferrite filled matrixes were evaluated separately. The results are correlated. Simple equations are proposed to predetermine the magnetic and dielectric properties. The validity of these equations is verified and they are found to be in good agreement. These equations are useful in tailoring the magnetic and dielectric properties of these composites with predetermined properties

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Fine particles of barium ferrite (BaFe12O19) were synthesized by the conventional ceramic technique. These materials were then characterized by the X-ray diffraction method and incorporated in the natural rubber matrix according to a specific receipe for various loadings of ferrite. The rubber ferrite composites (RFC) thus obtained have several applications, and have the advantage of molding into complex shapes. For applications such as microwave absorbers, these composites should have an appropriate dielectric strength with the required mechanical and magnetic properties. The N330 (HAF) carbon black has been added to these RFCs for various loadings to modify the dielectric and mechanical properties. In this article we report the effect of carbon black on the mechanical and dielectric properties of these RFCs. Both the mechanical and dielectric properties can be enhanced by the addition of an appropriate amount of carbon black

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Zinc aluminate nanoparticles with average particle size of 40 nm were synthesized using a sol–gel combustion method. X-ray diffractometry result was analysed by Rietveld refinement method to establish the phase purity of the material. Different stages of phase formation of the material during the synthesis were investigated using differential scanning calorimetry and differential thermogravimetric analysis. Particle size was determined with transmission electron microscopy and the optical bandgap of the nanoparticles was determined by absorption spectroscopy in the ultraviolet-visible range. Dielectric permittivity and a.c. conductivity of the material were measured for frequencies from 100 kHz to 8 MHz in the temperature range of 30–120◦C. The presence of Maxwell– Wagner type interfacial polarization was found to exist in the material and hopping of electron by means of quantum mechanical tunneling is attributed as the reason for the observed a.c. conductivity

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The development of methods to economically synthesize single wire structured multiferroic systems with room temperature spin−charge coupling is expected to be important for building next-generation multifunctional devices with ultralow power consumption. We demonstrate the fabrication of a single nanowire multiferroic system, a new geometry, exhibiting room temperature magnetodielectric coupling. A coaxial nanotube/nanowire heterostructure of barium titanate (BaTiO3, BTO) and cobalt (Co) has been synthesized using a template-assisted method. Room temperature ferromagnetism and ferroelectricity were exhibited by this coaxial system, indicating the coexistence of more than one ferroic interaction in this composite system

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Electrically conductive organic and metalloorganic polymers are of great interest and they have applications in electronic, optical, photonic, photoelectric, electrochemical, and dielectric devices. Tetrameric cobalt phthalocyanine was prepared by conventional chemical method. The dielectric permittivity of the tetrameric cobalt phthalocyanine sample was evaluated from the observed capacitance values in the frequency range 100 KHz to 5 MHz and in the temperature range of 300 to 383°K. It is found that the system obeys the Maxwell Wagner relaxation of space charge phenomenon. Further, from the permittivity studies AC conductivity was evaluated. The values of AC conductivity and DC conductivity were compared. Activation energy was calculated. To understand the conduction mechanism Mott’s variable range hopping model was applied to the system. The T 1/4 behavior of the DC conductivity along with the values of Mott’s Temperature (T0), density of states at the Fermi energy N (EF), and range of hopping R and hopping energy W indicate that the transport of charge carriers are by three-dimensional variable range hopping

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The temperature and frequency dependence of dielectric permittivity and dielectric loss of nanosized Mn1−xZnxFe2O4 (for x = 0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The impact of zinc substitution on the dielectric properties of the mixed ferrite is elucidated. Strong dielectric dispersion and broad relaxation were exhibited by Mn1−xZnxFe2O4. The variation of dielectric relaxation time with temperature suggests the involvement of multiple relaxation processes. Cole–Cole plots were employed as an effective tool for studying the observed phenomenon. The activation energies were calculated from relaxation peaks and Cole–Cole plots and found to be consistent with each other and indicative of a polaron conduction

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Rubber ferrite composites (RFCs) containing powdered nickel zinc ferrite (Ni1 – xZnxFe2O4 ) in a natural rubber matrix have been prepared and their mechanical and dielectric properties have been evaluated. Variations in the relative permittivity of both the ferrite ceramics and RFCs have been studied over a range of frequencies, ceramic compositions, ceramic ller loadings, and temperatures, and the results have been correlated. Appropriate mixture equations have been formulated to calculate the dielectric permittivity of the composite from the dielectric permittivity of its constituents. Values calculated using these equations have been compared with experimental data on relative permittivity, and the two have been found to be in good agreement. In the present investigationit was also observed that for x=0·4 and for the maximum ferrite loading, the composite sample exhibits maximum magnetisation and optimum exibility