103 resultados para Dielectric permittivities


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Nanocomposites based on natural rubber and nano-sized nickelwere synthesized by incorporating nickel nanoparticles in a natural rubber matrix for various loadings of the filler. Structural, morphological, magnetic and mechanical properties of the compositeswere evaluated along with a detailed study of dielectric properties. Itwas found that nickel particleswere uniformly distributed in the matrix without agglomeration resulting in a magnetic nanocomposite. The elastic properties showed an improvement with increase in filler content but breaking stress and breaking strain were found to decrease. Dielectric permittivity was found to decrease with increase in frequency, and found to increase with increase in nickel loading. The decrease in permittivity with temperature is attributed to the high volume expansivity of rubber at elevated temperatures. Dielectric loss of blank rubber as well as the composites was found to increase with temperature.

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Nanosized ZnFe2O4 particles containing traces of a-Fe2O3 by intent were produced by low temperature chemical coprecipitation methods. These particles were subjected to high-energy ball milling. These were then characterised using X-ray diffraction, magnetisation and dielectric studies. The effect of milling on zinc ferrite particles have been studied with a view to ascertaining the anomalous behaviour of these materials in the nanoregime. X-ray diffraction and magnetisation studies carried out show that these particles are associated with strains and it is the surface effects that contribute to the magnetisation. Hematite percentage, probably due to decomposition of zinc ferrite, increases with milling. Dielectric behaviour of these particles is due to interfacial polarisation as proposed by Koops. Also the defects caused by the milling produce traps in the surface layer contributes to dielectric permittivity via spin polarised electron tunnelling between grains. The ionic mechanism is enhanced in dielectrics with the rise in temperature which results in the increase of dielectric permittivity with temperature.

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Photothermal spectroscopy is a group of high sensitivity methods used to measure optical absorption and thermal characteristics of a sample.The basis of photothermal spectroscopy is a photo-induced change in the thermal state of the sample.Light energy absorbed and not lost by subsequent emission results in sample heating.This heating results in a temperature change as well as changes in thermodynamic parameters of the sample which are related to temperature.Measurements of the temperature,pressure,or density changes that occur due to optical absorption are ultimately the basis for the photothermal spectroscopic methods.This is a more direct measure of optical absorption than optical transmission based spectroscopies.Sample heating is a direct consequence of optical absorption and so photothermal spectroscopy signals are directly dependent on light absorption.Scattering and reflection losses do not produce photothermal signals.Subsequently,photothermal spectroscopy more accurately measures optical absorption in scattering solutions,in solids,and at interfaces.This aspect makes it particularly attractive for application to surface and solid absorption studies,and studies in scattering media.

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The author presents the development of a new dielectric resonator antenna(DRA) suitable for wideband wireless communication applications.The design comprises of a simple cylindrical dielectric resonator (DR) and a microstrip feed, in a low radiation-Q structure,enabling wide impedance bandwidth.The radiation pattern is conical shaped,resulted from thew low-Q structure.Dielectric constant of the DR,its dimensions and topological parameters of the feed line are the major design parameters of the antenna.By proper selection of these parameters,the DRA can be operated over a wideband width covering multiple wireless applications.The antenna is simulated using Ansoft HFSS TM and measured using HP 8510C vector network analyser.Some of the measured results are confirmed by using the Finite Difference Time Domain(FDTD) technique implemented in MATLAB.

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The radiation characteristics of a new type of hollow dielectric H-plane sectoral horn antenna are presented. Metallic strips of optimum length are loaded on the H-walls of the sectoral horns. The effects of strip loading for producing square patterns in the H plane are discussed.

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In the medical field, microwaves play a larger role for treatment than diagnosis. For the detection of diseases by microwave methods, it is essential to know the dielectric properties of biological materials. For the present study, a cavity perturbation technique was employed to determine the dielectric properties of these materials. Rectangular cavity resonators were used to measure the complex permittivity of human bile, bile stones, gastric juice and saliva. The measurements were carried out in the S and J bands. It is observed that normal and infected bile have different dielectric constant and loss tangent. Dielectric constant of infected bile and gastric juice varies from patient to patient. Detection and extraction of bile stone with possible method of treatment is also discussed.

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Ionic polymers (ionomers) with interesting characteristics are emerging as important commercial polymers. Ionomers have the unique ability to behave as cross-linked materials at ambient temperatures and to melt and flow at elevated temperatures like thermoplastics. The complex permittivity and conductivity of a class of ionomers at microwave frequencies are determined using the cavity perturbation technique and the results are presented.

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Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

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A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

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The dielectric and elastic properties are of considerable significance to the science and technology of matter in the solid state. The study of these properties give information about the magnitude of the forces and nature of the bonding between the atoms. Our aim has been to investigate systematically the effect of doping of an appropriate element on the elastic and dielectric properties of selected dielectric ceramics and oxide glasses. These materials have got wide technological applications due to their interesting electrical, optical, thermal and elastic behaviour. Ultrasound propagation and capacitance measurement techniques have been employed for the systematic investigation of the elastic and dielectric properties of selected number of these materials. Details of the work done and results obtained are presented in this thesis.

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Investigations on the design and development of certain new hollow dielectric hom antennas of rectangular cross section have been carried out. The main shortcoming of the existing ordinary hollow dielectric hom antenna (HDH) is the abrupt discontinuity at the feed-end. A new launching technique using a dielectric rod is introduced to overcome this limitation. Also a strip loading technique is employed for further modification of the antenna. Radiation parameters of new I-IDH antennas of Eplane sectoral, H-plane sectoral and pyramidal types were studied and are found to be very attractive. Theoretical approach based on Marcatili’s principle and two aperture theory along with diffraction theory and image theory is used to support the experimental findings. The HDH is considered as solid horn of effective dielectric constant and the aperture field is evaluated. The antenna is excited by the open waveguide in the dominant TE1o mode and so the existence of any hybrid mode is mled-out. The theoretical results are observed to be in good agreement with the experimental results.

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The thesis relates to the investigations carried out on Rectangular Dielectric Resonator Antenna configurations suitable for Mobile Communication applications. The main objectives of the research are to: - numerically compute the radiation characteristics of a Rectangular DRA - identify the resonant modes - validate the numerically predicted data through simulation and experiment 0 ascertain the influence of the geometrical and material parameters upon the radiation behaviour of the antenna ° develop compact Rectangular DRA configurations suitable for Mobile Communication applications Although approximate methods exist to compute the resonant frequency of Rectangular DRA’s, no rigorous analysis techniques have been developed so far to evaluate the resonant modes. In this thesis a 3D-FDTD (Finite Difference Time Domain) Modeller is developed using MATLAB® for the numerical computation of the radiation characteristics of the Rectangular DRA. The F DTD method is a powerful yet simple algorithm that involves the discretimtion and solution of the derivative form of Maxwell’s curl equations in the time domain.

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Experimental investigations on Microstrip line excited Dielectric Resonator Antenna configurations suitable for Mobile Communication applications are reported. High permittivity (εrd = 48) resonator samples with different aspect ratios are employed for the study. Theoretical analysis performed using FDTD method is also presented.

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Polyaniline thin films were prepared by ac plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity of these films were investigated in the frequency range from 100 Hz to 1MHz and in the temperature range from 300 to 373 K. Capacitance and dielectric loss decreased with frequency and increased with temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity σ(ω) was found to vary as ωs with the index s 1. Annealing of polyaniline thin films in high vacuum at 373K for 1 h was found to reduce the dielectric loss. FTIR studies reveal that the aromatic ring is retained in the polyaniline thin films, which enhances the thermal stability of the polymer films

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The effect of frequency, composition and temperature on the a.c. electrical conductivity were studied for the ceramic, Ni1–xZnxFe2O4, as well as the filler (Ni1–xZnxFe2O4) incorporated rubber ferrite composites (RFCs). Ni1–xZnxFe2O4 (where x varies from 0 to 1 in steps of 0×2) were prepared by usual ceramic techniques. They were then incorporated into a butyl rubber matrix according to a specific recipe. The a.c. electrical conductivity (sa.c.) calculations were carried out by using the data available from dielectric measurements and by employing a simple relationship. The a.c. conductivity values were found to be of the order of 10–3 S/m. Analysis of the results shows that sa.c. increases with increase of frequency and the change is same for both ceramic Ni1–xZnxFe2O4 and RFCs. sa.c. increases initially with the increase of zinc content and then decreases with increase of zinc. Same behaviour is observed for RFCs too. The dependence of sa.c. on the volume fraction of the magnetic filler was also studied and it was found that the a.c. conductivity of RFCs increases with increase of volume fraction of the magnetic filler. Temperature dependence of conductivity was studied for both ceramic and rubber ferrite composites. Conductivity shows a linear dependence with temperature in the case of ceramic samples