68 resultados para virtualizzazione umview viewos reti wireless mobilità livello transport
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Sensor networks are one of the fastest growing areas in broadwireless ad hoc networking (?Eld. A sensor node, typically'contains signal-processing circuits, micro-controllers and awireless transmitter/receiver antenna. Energy saving is oneof the critical issue for sensor networks since most sensorsare equipped with non-rechargeable batteries that have limited lifetime.In thiswork, four routing protocols for wireless sensor networks vizFlooding, Gossiping, GBR and LEACH have been simulated using Tiny OS and their power consumption is studied usingcaorwreiredTOoSuStIuMs.ingAMirceaal2izMaotitoens.of these protocols has been carried out using mica 2 motes
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Current Trends in Wireless Networking. DigitalLibrary@CUSAT. ...
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A compact Co-Planar Waveguide (CPW) fed antenna operating at 2.4GHz with 300MHz 2:1 VSWR bandwidth is presented. Compared to a conventional quarter wavelength CPW fed monopole antenna, the aperture area reduction of the present antenna is 85%. The prototype antenna fabricated on a substrate of εr = 4.4 and thickness 1.6mm is only 22x10x1.6mm3. This much size reduction and impedance matching is achieved by adjusting the signal to ground plane separation and meandering the ground plane of a 50Ω CPW transmission line
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A compact coplanar waveguide (CPW) fed uniplanar antenna for Quad-band applications is presented. The Quad-band operation is realized by imposing various current paths in a modified T-shaped radiating element. The antenna covers GSM 900, DCS 1800, IEEE802.11.a, IEEE802.11.b and HiperLAN-2 bands and exhibits good radiation characteristics. This low profile antenna has a dimension of 32mm×31mmwhen printed on a substrate of dielectric constant 4.4 and height 1.6mm. Details of design with experimental and simulated results are presented
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This paper presents the design and development of a compact CPW fed quad band antenna. This low profile antenna has a dimension of 32mmx31mm when printed on a substrate of dielectric constant 4.4 and height 1.6mm. The antenna covers GSM 900, DCS 1800, IEEE802.11.a, IEEE802.11.b and HiperLAN2 bands. The antenna exhibits good radiation characteristics with moderate gain
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The carrier transport mechanism of polyaniline (PA) thin films prepared by radio frequency plasma polymerization is described in this paper. The mechanism of electrical conduction and carrier mobility of PA thin films for different temperatures were examined using the aluminium–PA–aluminium (Al–PA–Al) structure. It is found that the mechanism of carrier transport in these thin films is space charge limited conduction. J –V studies on an asymmetric electrode configuration using indium tin oxide (ITO) as the base electrode and Al as the upper electrode (ITO–PA–Al structure) show a diode-like behaviour with a considerable rectification ratio
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This work presents a triple-mode sigma-delta modulator for three wireless standards namely GSM/WCDMA and Bluetooth. A reconfigurable ADC has been used to meet the wide bandwidth and high dynamic range requirements of the multi-standard receivers with less power consumption. A highly linear sigma-delta ADC which has reduced sensitivity to circuit imperfections has been chosen in our design. This is particularly suitable for wide band applications where the oversampling ratio is low. Simulation results indicate that the modulator achieves a peak SNDR of 84/68/68 dB over a bandwidth of 0.2/3.84/1.5 MHz with an oversampling ratio 128/8/8 in GSM/WCDMA/Bluetooth modes respectively
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Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2