Excitation of low-profile equilateral-triangular dielectric resonator antenna using a conducting conformal strip

A new configuration that employs a conducting conformal strip to excite the low-profile equilaterial-triangular dielectric resonator antenna (DRA) of very high permittivity is proposed. As compared with the previous aperture-coupling configuration, the new configuration has a wider impedance bandwidth (- 5.5%) and a higher front-to-back radiation ratio. The return loss, radiation patterns, and antenna gain are measured and discussed

Low backscattered dual-polarised metallo-dielectric structure based on sierpinski carpet

A novel technique for backscattering reduction for both TE and TM polarisation, employing a metallo-dielectric structure based on Sierpinski carpet fractal geometry, is reported. A reduction in backscattered power of --30 dB is obtained for normal incidence in the X-band for the structure using the third iterated stage of the fractal geometry

Power characteristics of dielectric optical piet hein waveguides

A fairly rigorous analytical treatment of the power characteristics of dielectric optical waveguides with Piet Hein core-cross sectional geometry is presented in this paper. This kind of wareguide structure would be advantageous owing to the absence of corners, which are found in rectangular guides, resulting in undesirable loss (hit to the scattering of light. In order to simplify this theoretical approach. em approximation of vanishing refractive index difference between the guiding and the non-guiding sections is implemented. The variation eJ logarithmic power is shown for different dimensions of the core, corresponding to different azimuthal modal indices. It is found that the nutlet with higher index values carry less logaritlunic power in the lower tail of the propagation 's constant range, and this feature affects the higher tail. A better kind of uniformity of the power distribution is observed near the higher tail of the range of propagation Constants

T-strip-fed High-Permittivity Rectangular Dielectric Resonator Antenna for Broadband Applications

rectangular low-density, high-permittivity dielectric resona or antenna (DRA) excited by T-shaped microstrip feed offering a 2:1 VSWR bandwidth of -22% at 2.975 GHz is reported. The design methoaology and experimental results of the antenna are discussed. The excellent gain and radiation performance of the proposed antenna project: it as a potential candidate for telecommunication applications

Rectangular Dielectric Resonator Antenna on a Conductor-backed Co-planar

In this paper, we present an effective excitation of a reelangular dielectric resonator antennas (DRA) with a conductor-hacked coplanar waveguide (CB-CPW). The radiation and resonance characteristics are found to van,, depending on the orientation of the DR on doe coplanar feed line. The effect of finite and infinite ground planes of CB-CPIV on the radiation characteristics of the rectangular DRA is studied. The orientation and position of the DR are optimized for maximum gain and bandwidth. The optimized antenna ,geometry offers --10.46 dBi gain and 7.5% bandwidth with low cross-polar radiation characteristics

High Permittivity and Low Ceramics in the Bao-SrO-Nb2O5 System

A new group of compounds with composition (Ba5-xSrx) Nb4015, having high permittivity and low loss have been prepared and characterized in the microwave frequency region . X-ray diffraction studies showed that monophase compound existed for all values of x from 0 to 5. Microwave dielectric properties such as and c f showed smooth variation with x , while the unloaded quality factor (Qu) showed remarkable improvement with x

New High Permittivity and Low Loss Ceramics in the Bao-Ti02- Nb205 Composition

New dielectric ceramics with formula BaTi3Nb4, O„ and Ba6Til4Nbz039 have been prepared and characterized. BaTi3Nba017 was densified to 92% of TD after firing at 1310 oC for 4 h. However, Ba6Ti 1 4Nb2O39 fired under optimized conditions (1260 ` C for 4 h) showed only 85% TD together with secondary phase. The crystal system of both of the compositions is orthorhombic

Ba(Tb1/2Nb1/2)03: A New Ceramic Microwave Dielectric Resonator

A new microwave dielectric resonator Ba(Tb1/2Nb1/2)03 has been prepared and characterized in the microwave frequency region. 1 wt% CeO2 is used as additive to reduce the sintering temperature. The sintered samples were characterized by XRD, SEM and Raman spectroscopic methods. Microwave DR properties such as er, Q factor and temperature-coefficient of resonant frequency (Ti) have been measured using a HP 8510 B Network Analyzer. Cylindrical DRs of Ba(Tb1/2Nbi/2)03 showed high Er (~ 37), high Q (~3,200) and low Tf (~10 ppm /°C) at 4 GHz and hence are useful for practical applications

Microwave Dielectric Properties of BaO -2CeO2-nTiO2 Ceramics

The BaO-2CeO2-nTiO2 ceramics with n = 3, 4 and 5 have been prepared with CeO2 as starting material . The ceramics have been characterized using scanning electron microscopy , X-ray diffraction , Raman and X-ray photoelectron spectroscopy techniques. The microwave dielectric properties have been measured using standard dielectric resonator techniques . BaO-2CeO2-3TiO2 (123), BaO-2CeO2-4TiO2 ( 124) and BaO-2CeO2-5TiO2 ( 125) ceramics showed dielectric constants of 38, 27 and 32, respectively . All the ceramics showed fairly good unloaded Q - factors . 124 and 125 compounds exhibited low tf values, while 123 showed a high rf value

The Effect of Glass Additives on the Microwave Dielectric Properties of Ba(Mg 1 /3Ta2/3)03 Ceramics

The effect of glass additives on the densification , phase evolution, microstructure and microwave dielectric properties of Ba(Mg1;3 Ta2i3)03 (BMT) was investigated . Different weight percentages of quenched glass such as B203 , Si02, B203-SiO2, ZnO-B203, 5ZnO-2B2O3, Al203-SiO2, Na20-2B203.10H20, BaO-B203-SiO2, MgO-B203-SiO2, PbO-B203-SiO2 , ZnO-B203-SiO2 and 2MgO-Al203-5SiO2 were added to calcined BMT precursor . The sintering temperature of the glass -added BMT samples were lowered down to 1300 °C compared to solid-state sintering where the temperature was 1650 °C. The formation of high temperature satellite phases such as Ba5Ta4O15 and Ba7Ta6O22 were found to be suppressed by the glass addition . Addition of glass systems such as B203, ZnO-B203, 5ZnO-2B203 and ZnO-B203-SiO2 improved the densification and microwave dielectric properties. Other glasses were found to react with BMT to form low-Q phases which prevented densification . The microwave dielectric properties of undoped BMT with a densification of 93 . 1 % of the theoretical density were Cr = 24 . 8, Tr = 8 ppm/°C and Q„ x f= 80,000 GHz. The BMT doped with 1.0 wt% of B203 has Q„ x f = 124,700GHz, Cr = 24.2, and T f = -1.3 ppm /°C. The unloaded Q factor of 0.2 wt% ZnO-B203-doped BMT was 136,500 GHz while that of 1.0 wt% of 5ZnO-2B203 added ceramic was Q„ x f= 141,800 GHz . The best microwave quality factor was observed for ZnO -B203-SiO2 (ZBS) glass-added ceramics which can act as a perfect liquid-phase medium for the sintering of BMT. The microwave dielectric properties of 0.2wt% ZBS-added BMT dielectric was Q„ x f= 152,800 GHz, F,= 25.5, and Tr = - 1.5 ppm/°C

Low-voltage driven ZnS:Mn MIS and MISIM thin film electroluminescent devices with Eu2O3 insulator layer

AC thin film electroluminescent devices of MIS and MISIM have been fabricated with a novel dielectric layer of Eu2O3 as an insulator. The threshold voltage for light emission is found to depend strongly on the frequency of excitation source in these devices. These devices are fabricated with an active layer of ZnS:Mn and a novel dielectric layer of Eu2O3 as an insulator. The observed frequency dependence of brightness-voltage characteristics has been explained on the basis of the loss characteristic of the insulator layer. Changes in the threshold voltage and brightness with variation in emitting or insulating film thickness have been investigated in metal-insulator-semiconductor (MIS) structures. It has been found that the decrease in brightness occurring with decreasing ZnS layer thickness can be compensated by an increase in brightness obtained by reducing the insulator thickness. The optimal condition for low threshold voltage and higher stability has been shown to occur when the active layer to insulator thickness ratio lies between one and two.

Investigations on the Multiferroic and Thermoelectric properties of Low and Intermediate band width Manganites

This thesis lays importance in the investigation on the multiferroic and thermooelectric properties of selected representatives of low bandwidth and intermediate band width manganites. The first candidate, Strontium doped Gd manganite, is prepared by wet solid state reaction method and the second candidate, Na doped La manganite, by citrate gel method. In addition to the above mentioned properties, magneto resistance and dielectric properties are investigated. Using dielectric spectroscopic the dispersion parameters are correlated to the relaxation mechanisms and an attempt is made to obtain the grain and grain boundary contribution to the impedance of the sample through impedance spectroscopy studies.